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Parasitic capacitance

About: Parasitic capacitance is a research topic. Over the lifetime, 10029 publications have been published within this topic receiving 110331 citations.


Papers
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Proceedings ArticleDOI
06 May 2001
TL;DR: By matching the fundamental and second harmonic impedances of the output network, the method can be extended for designing a class E power amplifier with both non-linear transistor output capacitance and finite DC-feed inductance.
Abstract: A numerical method for designing a class E power amplifier with a non-linear transistor output capacitance is presented. By matching the fundamental and second harmonic impedances of the output network, the method can be extended for designing a class E power amplifier with both non-linear transistor output capacitance and finite DC-feed inductance. A design example of 0.4 W 1.4 V class E power amplifier at 1 GHz with AMS 0.6 /spl mu/m BSIM.3v3 CMOS model is used to validate the method.

30 citations

Journal ArticleDOI
TL;DR: Values above 150 kΩ at 1 MHz have been obtained, which to the knowledge of the authors are the largest values experimentally measured and reported for a current source in EBI at this frequency.
Abstract: In this work, the single Op-Amp with load-in-the-loop topology as a current source is revisited. This circuit topology was already used as a voltage-controlled current source (VCCS) in the 1960s but was left unused when the requirements for higher frequency arose among the applications of electrical bioimpedance (EBI). The aim of the authors is not only limited to show that with the currently available electronic devices it is perfectly viable to use this simple VCCS topology as a working current source for wideband spectroscopy applications of EBI, but also to identify the limitations and the role of each of the circuit components in the most important parameter of a current for wideband applications: the output impedance. The study includes the eventual presence of a stray capacitance and also an original enhancement, driving with current the VCCS. Based on the theoretical analysis and experimental measurements, an accurate model of the output impedance is provided, explaining the role of the main constitutive elements of the circuit in the source's output impedance. Using the topologies presented in this work and the proposed model, any electronic designer can easily implement a simple and efficient current source for wideband EBI spectroscopy applications, e.g. in this study, values above 150 kΩ at 1 MHz have been obtained, which to the knowledge of the authors are the largest values experimentally measured and reported for a current source in EBI at this frequency.

30 citations

Proceedings ArticleDOI
12 Nov 2012
TL;DR: In this article, the authors presented the switching performance of 10A 15kV SiC MOSFET and analyzed its switching loss when considering the impact of parasitic capacitance.
Abstract: SiC MOSFET is favorable for high voltage applications due to its fast switching speed, low loss and high voltage rating compared with silicon power devices. This paper presents the switching performance of 10A 15kV SiC MOSFET and analyzes its switching loss when considering the impact of parasitic capacitance. A 20 kHz 20 kW Dual Active Half Bridge (DHB) dc-dc converter based on this new device is designed with full ZVS range. Simulation and experiment results are given to validate the analysis.

30 citations

Patent
19 Dec 2005
TL;DR: A circuit configuration for a capacitive touch switch contains at least one sensor circuit with a sensor element which changes its capacitance value when touched, and an evaluation circuit which is supplied with an output signal from the sensor circuit in order to determine whether the capacitive sensor element is actuated or not.
Abstract: A circuit configuration for a capacitive touch switch contains at least one sensor circuit with a capacitive sensor element which changes its capacitance value when touched, and an evaluation circuit which is supplied with an output signal from the sensor circuit in order to determine whether the capacitive sensor element is actuated or not. The at least one sensor circuit has a capacitance which is connected in parallel with the capacitive sensor element, and a capacitance/frequency converter which is connected to the parallel circuit containing the capacitance and the capacitive sensor element and generates, at its output, a frequency signal whose frequency depends on the total capacitance of the parallel circuit containing the capacitance and the capacitive sensor element. The evaluation circuit may thus use a significant change in the frequency of the output signal from the sensor circuit to deduce, in a simple manner, that the capacitive sensor element has been touched.

30 citations

Proceedings ArticleDOI
07 Nov 2002
TL;DR: In this paper, a higher-order frequency plane model for an integrated series resonant power conversion module is presented, where the cause for the occurrence of high frequency impedance peaks is identified as the parallel resonance between the winding inductance and its interwinding capacitance.
Abstract: This paper presents a higher order frequency plane model for an integrated series resonant power conversion module. The cause for the occurrence of high frequency impedance peaks is identified as the parallel resonance between the winding inductance and its inter-winding capacitance. The inter-winding capacitance can be calculated from a transmission-line-based lumped model using Schwartz-Christoffel transformation. The simulation results using the proposed model correlate the small-signal test results very well. The proposed higher order impedance model will help to evaluate the high frequency behavior of an ISRM or to minimize the high frequency parasitics. It can also be easily implemented in the design-oriented algorithm to facilitate the design and optimization of an ISRM. The application of this model to more complicated structures as well as some practical design issues is also discussed.

30 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202364
2022156
2021179
2020344
2019380
2018382