Topic
Parasitic capacitance
About: Parasitic capacitance is a research topic. Over the lifetime, 10029 publications have been published within this topic receiving 110331 citations.
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Patent•
30 Aug 1993
TL;DR: In this article, a step-up transformer is miniaturized by using a secondary side circuit as the feeder circuit of high frequency and employing parasitic capacitance as a part of a resonance circuit constituted between an inductive ballast and the inductive output of a leakage flux type transformer.
Abstract: PURPOSE:To miniaturize a step-up transformer by using a secondary side circuit as the feeder circuit of high frequency and employing parasitic capacitance as a part of a resonance circuit constituted between an inductive ballast and the inductive output of a leakage flux type transformer CONSTITUTION:A ballast is used as a choke coil from a conventional capacitor in an equivalent circuit, and the choke coil 2 of the secondary side circuit of a step-up transformer 1 has the effect of current limitation while a series resonance circuit is constituted with a parasitic capacitance 4 generated around a discharge tube 3, thus supplying the discharge tube 3 with high voltage When the parasitic capacitance 4 generated around the discharge tube 3 does not reach the calculated value of series resonance at that time, an auxiliary capacitance 5 is added in parallel, thus adjusting resonance frequency Accordingly, the parasitic capacitance is utilized as a part of the resonance circuit, thus adopting driving frequency higher than a conventional device, then miniaturizing the step-up transformer
29 citations
Patent•
07 Feb 1994
TL;DR: In this article, a photoelectric converting circuit with a photodiode generating photoelectric current in accordance with the quantity of light, a first integrating circuit integrating the current to convert it into a voltage, and a charge amplifier amplifying the change in the output voltage.
Abstract: A photoelectric converting circuit having a photodiode generating a photoelectric current in accordance with the quantity of light, a first integrating circuit integrating the photoelectric current to convert it into a voltage, and a charge amplifier amplifying the change in the output voltage of the first integrating circuit. The charge amplifier is composed of a second integrating circuit and a coupling capacitance connected between the output of the first integrating circuit and the input of the second integrating circuit. The change in the output of the second integrating circuit is proportional to the ratio of the coupling capacitance to the integration capacitance of the second integrating circuit. This makes it possible to improve the sensitivity of the photoelectric converting circuit without reducing the value of the integration capacitance of the first integrating circuit.
29 citations
08 Jun 2003
TL;DR: In this paper, a unique tunable capacitance has been designed that facilitates a completely isolated capacitance and a truly linear capacitance-voltage behavior using a low-temperature adhesive bonding process and device layer transfer techniques, a linear analog tunable capacitor has been fabricated and tested.
Abstract: A unique tunable capacitor has been designed that facilitates a completely isolated capacitance and a truly linear capacitance-voltage behavior. Using a low-temperature adhesive bonding process and device layer transfer techniques, a linear analog tunable capacitor has been fabricated and tested. The device shows a linear capacitance-voltage behavior using a +-10 V input voltage and tunes over a 1.78 to 3.88 pf range. The isolated design also allows greater flexibility in circuit design because the capacitor is not required to be a capacitor to ground.
29 citations
01 Oct 2016
TL;DR: This paper tries to experimentally compare the performance of three conversion structures derived from full-bridge inverter, i.e., inverters H4, H5, and H6, each controlled with different modulation strategies, based on the same hardware platform, experimental set-up, and operating conditions.
Abstract: In low-power photovoltaic systems, single-phase inverters are often used to inject the generated power into the grid. To increase the efficiency, the researchers have proposed to eliminate the transformer that connects the photovoltaic system to the grid. However, the absence of this transformer allows a leakage current to circulate through the ground, the parasitic capacitance of the photovoltaic panels and the grid transformer. Several transformerless inverter topologies have been proposed and investigated. This paper tries to experimentally compare the performance of three conversion structures derived from full-bridge inverter, i.e., inverters H4, H5, and H6, each controlled with different modulation strategies. The comparison is based on the same hardware platform, experimental set-up, and operating conditions.
29 citations
01 Dec 1997
TL;DR: In this paper, the high frequency characteristics of DTMOSFETs are described for the first time, and a small parasitic resistance due to an optimized Co salicide technology and small parasitic capacitance due to a reduction in the overlapped region between the gate and drain is achieved by gate poly-Si oxidation before LDD implantation.
Abstract: The high frequency characteristics of DTMOS are described here for the first time Our DTMOS has a small parasitic resistance due to an optimized Co salicide technology and a small parasitic capacitance due to a reduction in the overlapped region between the gate and drain, which is achieved by gate poly-Si oxidation before LDD implantation We obtained an Ft of 78 GHz and an Fmax of 37 GHz for a 01-/spl mu/m-Leff DTMOS even at a supply voltage of 07 V We also noted an Fmax enhancement of 15 times compared to that of a conventional SOI MOSFET, which is attributed to a high transconductance and a large output resistance
29 citations