Parasitic capacitance

About: Parasitic capacitance is a research topic. Over the lifetime, 10029 publications have been published within this topic receiving 110331 citations.

Deadband Effect and Accurate ZVS Boundaries of GaN-Based Dual-Active-Bridge Converters With Multiple-Phase-Shift Control

Abstract: Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are promising for the next-generation power switching applications due to their low on -resistance, high-frequency operation, and small gate capacitances, which are essential for the power density and efficiency improvement. However, with the increase of the switching frequency, the deadband effect will become a challenging issue for the high-efficiency converter design over a wide operation range. In this article, a comprehensive theoretical analysis and experimental verification of the deadband effect in the GaN-based dual-active-bridge (DAB) converters with multiple-phase-shift (MPS) control is presented. First, resonant transitions for various switching conditions with different initial currents by using MPS controls are discussed, and the effect of the stray capacitance of GaN HEMTs is analyzed. On this basis, the accurate boundaries among zero-voltage switching (ZVS), partial ZVS, and hard switching with MPS control can be obtained. A deadband compensation strategy is proposed by considering different switching conditions. Finally, a DAB prototype based on GaN HEMTs was built, and main experimental results were provided to verify the effectiveness of the proposed resonant transition analysis, ZVS boundaries, and the deadband compensation strategy.

Characterization and analysis of parasitic parameters and their effects in power electronics circuit

Abstract: Parasitic elements (resistance, inductance, and capacitance) of the transformer and circuit traces in power electronics circuit are characterized by using the software package ANSOFT. The effects of the parasitic elements on circuit operation are analyzed. Simulation and experimental results are compared and the parameter that has the most significant effect on circuit operation is determined. As a result, circuit layout optimization can be performed.

Accessing nanomechanical resonators via a fast microwave circuit

Abstract: We demonstrate how to fully electrically detect the vibrations of conductive nanomechanical resonators up to the microwave regime. We use the electrically actuated vibrations to modulate an LC tank circuit, which blocks the stray capacitance and detect the created sideband voltage by a microwave analyzer. We prove the technique up to mechanical frequencies of 200 MHz. Finally, we estimate how one could approach the quantum limit of mechanical systems.

Switched capacitor circuit with high power supply projection ratio

Abstract: In a switched capacitor circuit, in order to eliminate leakage of a power supply noise component to a signal line through an input capacitance of an operation amplifier, (1) an operating current of at least a first, differential stage among stages of the operational amplifier is regulated by a current regulation bias circuit, and (2) a power supply noise component having the same phase as that of an input signal is applied to the gate of a transistor of a gain stage, thereby stabilizing the operating point. In order to eliminate leakage of the power supply noise component to the signal line through a parasitic capacitance of an analog switch, (3) a dummy switch is used to detect a signal corresponding to the leakage component of the power supply noise component to the signal line, and an inverted signal having the opposite phase to that of the signal corresponding to the leakage component is applied to a substrate of the analog switch, thereby cancelling the actual leakage component.

Reducing stray capacitance in antenna element switching

Abstract: An antenna array may include an antenna element configured to receive an RF signal. A PIN diode may selectively couple the antenna element to an RF source. Biasing the PIN diode may cancel the received RF signal at a stub coupled to the diode thereby reducing stray capacitance of the PIN diode. A method for switching antenna elements is also disclosed. A PIN diode coupled to an antenna element is biased thereby reflecting the received RF signal out-of-phase within a stub such that the signal is canceling and stray capacitance of the PIN diode is reduced.