About: Pentacene is a(n) research topic. Over the lifetime, 5051 publication(s) have been published within this topic receiving 161481 citation(s). The topic is also known as: 2,3:6,7-dibenzanthracene & benzo[b]naphthacene.
Papers published on a yearly basis
21 Oct 2002-Journal of Applied Physics
TL;DR: In this article, a spin-coated polymer gate dielectric layer was used to obtain a polyvinylphenol-based copolymer-based transistor with a carrier mobility as large as 3 cm2/V's and sub-threshold swing as low as 0.5 V/decade.
Abstract: We have fabricated pentacene organic thin film transistors with spin-coated polymer gate dielectric layers, including cross-linked polyvinylphenol and a polyvinylphenol-based copolymer, and obtained devices with excellent electrical characteristics, including carrier mobility as large as 3 cm2/V s, subthreshold swing as low as 1.2 V/decade, and on/off current ratio of 105. For comparison, we have also fabricated pentacene transistors using thermally grown silicon dioxide as the gate dielectric and obtained carrier mobilities as large as 1 cm2/V s and subthreshold swing as low as 0.5 V/decade.
TL;DR: The preparation of two functionalized pentacene derivatives, and the effect of this functionalization on both the solid-state ordering and the electronic properties of the resulting crystals is reported.
Abstract: Molecular order has proven to be a significant factor in the performance of devices based on organic semiconductors. Recent studies involving solubilized versus unsubstituted thiophene oligomers have demonstrated that modifications which increase orbital overlap in the solid state can improve device performance by more than an order of magnitude. 1 Similar studies on pentacene, a compound which has already demonstrated remarkable potential for device applications, 2 have also focused on maximizing orbital overlap by inducing order in films. 3 However, these pentacene studies have thus far relied on substrate modification, rather than on pentacene functionalization, 4 to achieve the desired goals. We report here the preparation of two functionalized pentacene derivatives, and the effect of this functionalization on both the solid-state ordering and the electronic properties of the resulting crystals. Our goal for a functionalized pentacene was two-fold: First, the substituents should impart solubility to the acene, to simplify purification and processing. Second, the substituents should induce some capability for self-assembly of the aromatic moieties into -stacked arrays to enhance intermolecular orbital overlap. We anticipated that both of these goals could be accomplished by exploiting a rigid spacer to hold the necessarily bulky solubilizing groups well away from the aromatic core, allowing the closest possible contact between the aromatic rings. 5 Our initial targets were the bis(triisopropylsilylethynyl)pentacenes 1 and 2. Both of these compounds are easily prepared in near quantitative yield in a one-pot reaction from 6,13-pentacenequinone and 5,14pentacenequinone, respectively. 6
01 Dec 1997-IEEE Electron Device Letters
TL;DR: In this article, photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and sub-threshold slope were fabricated using two layers of pentacene deposited at different substrate temperatures.
Abstract: Using two layers of pentacene deposited at different substrate temperatures as the active material, we have fabricated photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and subthreshold slope. These devices use photolithographically defined gold source and drain electrodes and octadecyltrichlorosilane-treated silicon dioxide gate dielectric. The devices have field-effect mobility as large as 1.5 cm/sup 2//V-s, on/off current ratio larger than 10/sup 8/, near zero threshold voltage, and subthreshold slope less than 1.6 V per decade. To our knowledge, this is the largest field-effect mobility and smallest subthreshold slope yet reported for any organic transistor, and the first time both of these important characteristics have been obtained for a single device.
TL;DR: A solution-processing technique in which lattice strain is used to increase charge carrier mobilities by introducing greater electron orbital overlap between the component molecules should aid the development of high-performance, low-cost organic semiconducting devices.
Abstract: A solution-processing method known as solution shearing is used to introduce lattice strain to organic semiconductors, thus improving charge carrier mobility. Solution-processed organic semiconductors show great promise for application in cheap and flexible electronic devices, but generally suffer from greatly reduced electronic performance — most notably charge-carrier mobilities — compared with their inorganic counterparts. Borrowing a trick from the inorganic semiconductor community, Giri et al. show how the introduction of strain into an organic semiconductor, through a simple solution-processing technique, modifies the molecular packing within the material and hence its electronic performance. For one material studied, the preparation of a strained structure is shown to more than double the charge-carrier mobility. Circuits based on organic semiconductors are being actively explored for flexible, transparent and low-cost electronic applications1,2,3,4,5. But to realize such applications, the charge carrier mobilities of solution-processed organic semiconductors must be improved. For inorganic semiconductors, a general method of increasing charge carrier mobility is to introduce strain within the crystal lattice6. Here we describe a solution-processing technique for organic semiconductors in which lattice strain is used to increase charge carrier mobilities by introducing greater electron orbital overlap between the component molecules. For organic semiconductors, the spacing between cofacially stacked, conjugated backbones (the π–π stacking distance) greatly influences electron orbital overlap and therefore mobility7. Using our method to incrementally introduce lattice strain, we alter the π–π stacking distance of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) from 3.33 A to 3.08 A. We believe that 3.08 A is the shortest π–π stacking distance that has been achieved in an organic semiconductor crystal lattice (although a π–π distance of 3.04 A has been achieved through intramolecular bonding8,9,10). The positive charge carrier (hole) mobility in TIPS-pentacene transistors increased from 0.8 cm2 V−1 s−1 for unstrained films to a high mobility of 4.6 cm2 V−1 s−1 for a strained film. Using solution processing to modify molecular packing through lattice strain should aid the development of high-performance, low-cost organic semiconducting devices.
19 Apr 2004-Applied Physics Letters
TL;DR: In this article, the hole mobility for the organic conductor pentacene was obtained at room temperature and at 225 K. The number of traps was reduced by two orders of magnitude compared with conventional methods.
Abstract: We have obtained a hole mobility for the organic conductor pentacene of μ=35 cm2/V s at room temperature increasing to μ=58 cm2/V s at 225 K. These high mobilities result from a purification process in which 6,13-pentacenequinone was removed by vacuum sublimation. The number of traps is reduced by two orders of magnitude compared with conventional methods. The temperature dependence of the mobility is consistent with the band model for electronic transport.
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