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Pentacene

About: Pentacene is a research topic. Over the lifetime, 5051 publications have been published within this topic receiving 161481 citations. The topic is also known as: 2,3:6,7-dibenzanthracene & benzo[b]naphthacene.


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Journal ArticleDOI
TL;DR: It is shown that the changes in bulk intermolecular interactions can have little effect on the singlet fission rate in a mixture of pentacene and weakly interacting spacer molecules, suggesting a reduction of charge-transfer interactions between pentacenes molecules with increasing spacer molecule fraction.
Abstract: Singlet fission, the spin-allowed photophysical process converting an excited singlet state into two triplet states, has attracted significant attention for device applications. Research so far has focused mainly on the understanding of singlet fission in pure materials, yet blends offer the promise of a controlled tuning of intermolecular interactions, impacting singlet fission efficiencies. Here we report a study of singlet fission in mixtures of pentacene with weakly interacting spacer molecules. Comparison of experimentally determined stationary optical properties and theoretical calculations indicates a reduction of charge-transfer interactions between pentacene molecules with increasing spacer molecule fraction. Theory predicts that the reduced interactions slow down singlet fission in these blends, but surprisingly we find that singlet fission occurs on a timescale comparable to that in pure crystalline pentacene. We explain the observed robustness of singlet fission in such mixed films by a mechanism of exciton diffusion to hot spots with closer intermolecular spacings.

73 citations

Journal ArticleDOI
TL;DR: In this paper, the performance limits for pentacene-based field effect transistors are investigated using single and polycrystalline devices, and it is shown that trap and grain boundary effects significantly influence the temperature dependence of the field effect mobility.

73 citations

Journal ArticleDOI
TL;DR: Atomically thin organic-inorganic (O-I) heterostructures, comprising monolayer MoSe2 and mono-/few-layer single-crystal pentacene samples, are fabricated, allowing efficient and layer-dependent exciton pumping across the O-I interfaces.
Abstract: The fundamental light-matter interactions in monolayer transition metal dichalcogenides might be significantly engineered by hybridization with their organic counterparts, enabling intriguing optoelectronic applications. Here, atomically thin organic-inorganic (O-I) heterostructures, comprising monolayer MoSe2 and mono-/few-layer single-crystal pentacene samples, are fabricated. These heterostructures show type-I band alignments, allowing efficient and layer-dependent exciton pumping across the O-I interfaces. The interfacial exciton pumping has much higher efficiency (>86 times) than the photoexcitation process in MoSe2 , although the pentacene layer has much lower optical absorption than MoSe2 . This highly enhanced pumping efficiency is attributed to the high quantum yield in pentacene and the ultrafast energy transfer between the O-I interface. Furthermore, those organic counterparts significantly modulate the bindings of charged excitons in monolayer MoSe2 via their precise dielectric environment engineering. The results open new avenues for exploring fundamental phenomena and novel optoelectronic applications using atomically thin O-I heterostructures.

73 citations

Journal ArticleDOI
TL;DR: In this paper, the authors measured the displacement currents of a pentacene field effect transistor (FET) by measuring the hole injection from Au source and drain electrodes and found that the capacitance calculated from the observed displacement current is a good measure of the lateral spread of the injected carriers at organic/dielectric interfaces.
Abstract: We have investigated carrier injection characteristics of a pentacene field effect transistor (FET) by measuring the displacement currents of the device. Hole injection from Au source and drain electrodes was clearly observed at negative gate voltage. We found that the capacitance calculated from the observed displacement current is a good measure of the lateral spread of the injected carriers at organic/dielectric interfaces. This technique also gives the estimation of the total amount of the accumulated charges in the FET device by integrating the displacement current. The present results demonstrate that this method can successfully probe the behavior of the carriers in organic FETs(OFETs), which is crucial for elucidating the operating mechanism of the transistors. From the measurements of the C60 FET structure in the atmosphere, which shows no gate modulation, we revealed that this technique is also useful for failure analysis of OFETs.

72 citations

Journal ArticleDOI
TL;DR: In this article, a novel application of ethylene-norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported.
Abstract: A novel application of ethylene-norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field-effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally-treated N,N'-ditridecyl perylene diimide (PTCDI-C13)-based n-type FETs using a COC/SiO 2 gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95° ± 1°) and high thermal stability (glass transition temperature =181 °C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI-C13 domains grown on the COC/SiO 2 gate dielectric increases significantly. The resulting n-type FETs exhibit high atmospheric field-effect mobilities, up to 0.90 cm 2 V -1 s -1 in the 20 V saturation regime and long-term stability with respect to H 2 O/O 2 degradation, hysteresis, or sweep-stress over 110 days. By integrating the n-type FETs with p-type pentacene-based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized.

72 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202382
2022176
2021111
2020125
2019151
2018159