Topic
Pentacene
About: Pentacene is a research topic. Over the lifetime, 5051 publications have been published within this topic receiving 161481 citations. The topic is also known as: 2,3:6,7-dibenzanthracene & benzo[b]naphthacene.
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TL;DR: It is hypothesized that for these SAMs, mitigation of molecular scale roughness and subsequent control of surface homogeneity allow for large pentacenes grain growth leading to high performance pentacene OFET devices.
Abstract: A systematic study of six phosphonic acid (PA) self-assembled monolayers (SAMs) with tailored molecular structures is performed to evaluate their effectiveness as dielectric modifying layers in organic field-effect transistors (OFETs) and determine the relationship between SAM structural order, surface homogeneity, and surface energy in dictating device performance. SAM structures and surface properties are examined by near edge X-ray absorption fine structure (NEXAFS) spectroscopy, contact angle goniometry, and atomic force microscopy (AFM). Top-contact pentacene OFET devices are fabricated on SAM modified Si with a thermally grown oxide layer as a dielectric. For less ordered methyl- and phenyl-terminated alkyl ∼(CH2)12 PA SAMs of varying surface energies, pentacene OFETs show high charge carrier mobilities up to 4.1 cm2 V−1 s−1. It is hypothesized that for these SAMs, mitigation of molecular scale roughness and subsequent control of surface homogeneity allow for large pentacene grain growth leading to high performance pentacene OFET devices. PA SAMs that contain bulky terminal groups or are highly crystalline in nature do not allow for a homogenous surface at a molecular level and result in charge carrier mobilities of 1.3 cm2 V−1 s−1 or less. For all molecules used in this study, no causal relationship between SAM surface energy and charge carrier mobility in pentacene FET devices is observed.
70 citations
TL;DR: Organic-inorganic films grown entirely via a vapor-phase deposition process and composed of highly polarizable molecular structures are investigated as gate dielectrics in organic field-effect transistors (OFETs).
Abstract: Organic-inorganic films grown entirely via a vapor-phase deposition process and composed of highly polarizable molecular structures are investigated as gate dielectrics in organic field-effect transistors (OFETs). Molecules 1 and 2 form self-ordered thin films via hydrogen bonding, and these organic-inorganic structures exhibit large capacitances and large pentacene OFET mobilities.
70 citations
TL;DR: In this article, the hole mobility of the pentacene film was measured as a function of gate bias, and the observed features indicate that on bare alumina, mobility is higher close to the interface than in the bulk, while the reverse is true for a SAM treated oxide.
70 citations
TL;DR: Using epitaxially grown graphene on Ru(0001) as a buffer layer, the intrinsic molecular orbitals of perylene-3,4,9,10-tetracarboxylic dianhydride, pentacene, and C60 molecules were imaged by means of scanning tunneling microscope (STM) as discussed by the authors.
Abstract: Using epitaxially grown graphene on Ru(0001) as a buffer layer, the intrinsic molecular orbitals of perylene-3,4,9,10-tetracarboxylic dianhydride, pentacene, and C60 molecules were imaged by means of scanning tunneling microscope (STM). Combined with density functional theory calculations, our high resolution STM images of the molecules reveal that the graphene layer decouples the individual molecules electronically from the metallic substrate. Our results show that graphene-based moire pattern can be used as a unique way to probe the intrinsic electronic structures of molecular adsorbates and their interactions.
70 citations
TL;DR: In this paper, the authors have shown that the performance of thin films of pentacene (PEN) with alkaline metals such as sodium, potassium, and rubidium can dramatically change from an insulator to an n-type semiconductor due to the doping.
Abstract: Donor doping of thin films of pentacene (PEN) with alkaline metals such as sodium, potassium, and rubidium was carried out Drastic changes in conductivities of PEN films from an insulator to an n‐type semiconductor due to the doping was observed Maximum conductivity of 28 Ω−1 cm−1 was shown in the film doped with rubidium Alkaline metal doping of thin films of other acene compounds such as tetracene and hexacene was also performed
69 citations