Pentacene

About: Pentacene is a research topic. Over the lifetime, 5051 publications have been published within this topic receiving 161481 citations. The topic is also known as: 2,3:6,7-dibenzanthracene & benzo[b]naphthacene.

Effects of substrate temperature on the device properties of pentacene-based thin film transistors using Al2O3+x gate dielectric

Abstract: We report on the electrical properties of pentacene-based organic thin film transistors (OTFTs), where the active pentacene channel layers have been deposited at fixed deposition rate of 1 A/s on a 250-nm-thick Al2O3+x gate dielectric film at various substrate temperatures: room temperature, 60 °C, and 90 °C The grain size of the pentacene layer was found to increase with the substrate temperature, accompanied by a phase transition The highest saturation current of 20 μA (under a gate bias of −40 V) was obtained with a high field-effect hole mobility of ∼021 cm2/V s from an OTFT prepared at 90 °C despite a relatively low on/off current ratio of 2×105 It is concluded that the pentacene channel deposited at a high substrate temperature contains not only large grains but also high density traps

Comparative study of the photoresponse from tetracene-based and pentacene-based thin-film transistors

Abstract: We report on the photoresponse from tetracene-based and pentacene-based thin-film transistors (TFTs) with semitransparent NiOx source/drain electrodes and SiO2∕p+-Si substrate. Both organic TFTs have been fabricated with identical channel thickness and device geometry. Compared with pentacene-based TFTs, the tetracene-TFT exhibited superior potentials as a photodetector in the visible and ultraviolet range although it showed a field mobility (μ=0.003cm2∕Vs) which is two orders of magnitude lower than that of the pentacene-based TFT (μ=∼0.3cm2∕Vs). The tetracene-TFT displayed a high photo-to-dark current ratio (Iph∕Idark) of 3×103, while that of the pentacene-TFT was only ∼10.

Low-temperature processable inherently photosensitive polyimide as a gate insulator for organic thin-film transistors

Abstract: We have fabricated organic thin-film transistors (OTFTs) on polyethersulfone substrate using low-temperature processable, inherently photosensitive polyimide as the gate insulator and pentacene as the active material. The polyimide was prepared through two-step reaction. The polyimide precursor, poly(amic acid), was prepared from a dianhydride and aromatic diamine through a polycondensation reaction, and subsequently converted to its corresponding polyimide by a chemical imidization. Photolithographic properties of the polyimide are investigated. The pattern resolution of the cured polyimide was about 50μm. The pentacene OTFTs with the patterned polyimide were obtained with a carrier mobility of 0.1cm2∕Vs and ION∕IOFF of 5×105. The OTFT characteristics are discussed in more detail with respect to the electrical properties of the photosensitive polyimide thin film. This low-temperature photopatternable polyimide paves the way for the easy and low-cost fabrication of OTFT arrays without expensive and compli...

Air stable, high performance pentacene thin-film transistor fabricated on SiO2 gate insulator treated with β-phenethyltrichlorosilane

Abstract: A pentacene thin-film transistor (TFT) was fabricated on a SiO2 gate insulator treated with β-phenethyltrichlorosilane (β-PTS). Employing β-PTS for the surface treatment of SiO2, large grains were present in the initial stage of pentacene crystal growth. The field effect mobility was as high as 1.5cm2∕Vs and the on/off ratio was over 106. The surface treatment dramatically improved the stability in air of the pentacene-TFT’s electrical characteristics. A field effect mobility of over 1cm2∕Vs and on/off ratio of over 105 were maintained after scanning the gate voltage 2000 times in air. This result indicates that the surface treatment with β-PTS not only improved TFT performance but also significantly suppressed the device’s degradation.

Remarkable mobility increase and threshold voltage reduction in organic field-effect transistors by overlaying discontinuous nano-patches of charge-transfer doping layer on top of semiconducting film.

Abstract: An effective strategy for significantly increasing the organic transistor mobility with simultaneous reduction of the threshold voltage utilizing discontinuous nano-patches of charge-transfer doping layer is demonstrated. By overlaying the nano-patches on top of a given semiconducting film, mobility and threshold voltage of p-type pentacene are remarkably improved to 4.52 cm(2) V(-1) s(-1) and -0.4 V, and those of n-type Hex-4-TFPTA are also improved to 2.57 cm(2) V(-1) s(-1) and 4.1 V.