Pentacene

About: Pentacene is a research topic. Over the lifetime, 5051 publications have been published within this topic receiving 161481 citations. The topic is also known as: 2,3:6,7-dibenzanthracene & benzo[b]naphthacene.

Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperature

Abstract: We describe gated four-probe measurements designed to measure contact resistance in pentacene-based organic thin-film transistors (OTFTs) The devices consisted of metal source and drain electrodes contacting a 300-A-thick pentacene film thermally deposited on Al2O3 or SiO2 dielectrics with a p-doped Si substrate serving as the gate electrode Voltage-sensing leads extending into the source-drain channel were used to monitor potentials in the pentacene film while passing current during drain voltage (VD) or gate voltage (VG) sweeps We investigated the potential profiles as a function of contact metallurgy (Pt, Au, Ag, and Ca), substrate chemistry, VG, and temperature The contact-corrected linear hole mobilities were as high as 175cm2∕Vs and the film sheet resistance and specific contact resistance were as low as 600kΩ∕◻ and 13kΩ-cm, respectively, at high gate voltages In the temperature range of 50–200K, the pentacene OTFTs displayed an activated behavior with activation energies of 15–30meV Importa

Low-temperature structure of rubrene single crystals grown by vapor transport

Abstract: We report the crystal structure of rubrene, C42H28 (5,6,11,12-tetraphenyltetracene), in the temperature interval 100–300 K. The crystals are grown by physical vapor transport in an open system. The crystal structure is orthorhombic over the entire temperature range.

Ten years of N-heteropentacenes as semiconductors for organic thin-film transistors.

Abstract: Introducing N atoms to the pentacene backbone leads to N-heteropentacenes, whose properties can be tuned by changing the number, position and valence state of N atoms in the pentacene backbone. With a rapid development in recent years, N-heteropentacenes and their derivatives have arisen as a new family of organic semiconductors with high performance in organic thin-film transistors (OTFTs). This article reviews the research efforts of developing N-heteropentacenes into organic semiconductors starting from 2003 with emphasis on the work of the author's group since 2009. The structure-property relationship and design rationale are highlighted based on an overview of reported organic semiconductors of N-heteropentacenes.

Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy

Abstract: Surface potentials of operating pentacene thin-film transistors (TFTs) with two different contact geometries (bottom or top) were mapped by Kelvin probe force microscopy (KFM). The surface potential distribution was used to isolate the potential drops at the source and drain contacts. These potential drops were converted to resistances by dividing by the appropriate drain current values. The bottom contact TFTs were contact limited at large gate voltages, while the top contact TFTs were not contact limited. In both geometries, the contact and the channel resistances decreased strongly with increasing (negative) gate bias but did not depend strongly on the drain bias. This study demonstrates the utility of KFM for visualizing charge transport bottlenecks in operating pentacene devices and for correlating electrical behavior with device structure by comparison of surface potential and topographic maps.

Electron traps and hysteresis in pentacene-based organic thin-film transistors

Abstract: In the absence of charge storage or slow polarization in the gate dielectric, the hysteresis in the current-voltage (I−V) characteristics of pentacene-based organic thin-film transistors (OTFTs) is dominated by trapped electrons in the semiconductor. The immobile previously stored negative charge requires extra holes to balance it, resulting in the early establishment of the channel and extra drain current. Inferred from I−V characteristics, this simple electrostatic model qualitatively explains memory effects in pentacene-based OTFTs, and was verified by a time domain measurement.