Topic
Pentacene
About: Pentacene is a research topic. Over the lifetime, 5051 publications have been published within this topic receiving 161481 citations. The topic is also known as: 2,3:6,7-dibenzanthracene & benzo[b]naphthacene.
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TL;DR: In this paper, the equivalent circuit parameters for a pentacene organic field effect transistor are determined from low frequency impedance measurements in the dark as well as under light illumination, and the shift in threshold voltage is due to the accumulation of photogenerated carriers under source-drain electrodes and at dielectric-semiconductor interface.
Abstract: The equivalent circuit parameters for a pentacene organic field-effect transistor are determined from low frequency impedance measurements in the dark as well as under light illumination. The source-drain channel impedance parameters are obtained from Bode plot analysis and the deviations at low frequency are mainly due to the contact impedance. The charge accumulation at organic semiconductor–metal interface and dielectric–semiconductor interface is monitored from the response to light as an additional parameter to find out the contributions arising from photovoltaic and photoconductive effects. The shift in threshold voltage is due to the accumulation of photogenerated carriers under source-drain electrodes and at dielectric–semiconductor interface, and also this dominates the carrier transport. The charge carrier trapping at various interfaces and in the semiconductor is estimated from the dc and ac impedance measurements under illumination.
46 citations
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TL;DR: Functionalization of the pro-cata positions of pentacene with groups held perpendicular to the aromatic plane, in this case through a rigid 1,3-dioxole unit, yields pentacenes derivatives that are stable and soluble, and still maintain edge-to-face interactions in the solid state.
46 citations
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TL;DR: In this article, the vertical carrier mobility of bilayered organic photodiodes was investigated for the first time, and the influence of deposition rate on vertical hole mobility of pentacene film was discussed.
Abstract: The direct influence of the vertical carrier mobility on the frequency response of bilayered organic photodiodes (PDs) is investigated for the first time. With fullerene as the acceptor material, changing vertical hole mobility from 2.3×10−5 to 2.8×10−4 cm2/V s increases PD bandwidth from 10 to 80 MHz under a 4 V operation. The influence of deposition rate on vertical hole mobility of pentacene film is also discussed. Our results facilitate the application of bilayered organic PDs on the detection of very-high-frequency optical signals.
46 citations
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TL;DR: N-Heterocyclic carbenes (NHCs), which react with the surface of Au electrodes, have been successfully applied in pentacene transistors and make NHCs as excellent alternatives to thiols as metal modifiers for the application in organic field-effect transistors (OFETs).
Abstract: N-Heterocyclic carbenes (NHCs), which react with the surface of Au electrodes, have been successfully applied in pentacene transistors. With the application of NHCs, the charge-carrier mobility of pentacene transistors increased by five times, while the contact resistance at the pentacene-Au interface was reduced by 85 %. Even after annealing the NHC-Au electrodes at 200 °C for 2 h before pentacene deposition, the charge-carrier mobility of the pentacene transistors did not decrease. The distinguished performance makes NHCs as excellent alternatives to thiols as metal modifiers for the application in organic field-effect transistors (OFETs).
46 citations
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TL;DR: In this paper, the spin injection and transport properties of low-molecular-weight organic semiconductors such as pentacene and bis(l,2,5-thiadiazolo)-p-quinobis (l,3-dithiole) (BTQBT) were investigated utilizing planar-type spin-valve devices with half-metallic La0.67Sr0.33MnO3 electrodes.
Abstract: The spin injection and transport properties of low-molecular-weight organic semiconductors such as pentacene and bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) were investigated utilizing planar-type spin-valve devices with half-metallic La0.67Sr0.33MnO3 electrodes. The devices showed clear spin-valve characteristics with a magnetoresistance (MR) ratio of up to 29% at 5K. The MR ratio was found to depend on the gap spacing of the electrodes, the applied bias voltage, temperature, and the crystallinity of the films. It was also affected by gas adsorption onto the films, indicating that the spins were scattered by carriers and/or radical ions in the films generated through charge transfer from gas molecules.
46 citations