Topic
Pentacene
About: Pentacene is a research topic. Over the lifetime, 5051 publications have been published within this topic receiving 161481 citations. The topic is also known as: 2,3:6,7-dibenzanthracene & benzo[b]naphthacene.
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19 Jun 2003TL;DR: In this paper, an organic semiconductor element is provided which has the controlled crystalline state of a vapor-deposited pentacene layer and a high mobility with low voltage driving.
Abstract: An organic semiconductor element is provided which has the controlled crystalline state of a vapor-deposited pentacene layer and a high mobility with low voltage driving. The organic semiconductor element is formed by providing a gate electrode 101 on the surface of a substrate 102, providing thereon a gate insulating layer 103, providing on the surface of the gate insulating layer 103 an island-shaped protrusion layer 104 having dispersed and island-shaped protrusions with a low surface energy, providing on the island-shaped protrusion layer 104 a source electrode 106 and a drain electrode 107 with a distance therebetween, providing thereon an organic semiconductor layer 105 in contact with the island-shaped protrusion layer 104 and both electrodes 106 and 107, and further providing a protective film 108 on the organic semiconductor layer 105.
43 citations
TL;DR: In this paper, the authors used the membrane shadow mask and the interface between the evaporated Au and pentacene to analyze the channel resistance of top-contact OTFTs with various channel lengths.
43 citations
TL;DR: In this article, the effects of the imidization ratio of polyimide gate insulators on the performance of organic thin-film transistors (OTFTs) were demonstrated.
43 citations
TL;DR: In this article, the synthesis, characterization, spectroscopy, and photochemistry of s-dipentacene (see Figure 1) was reported, and the symmetric addition product dimer of pentacene was formed upon irradiation of a solution of pentacidene.
Abstract: We report the synthesis, characterization, spectroscopy, and photochemistry of s-dipentacene (see Figure 1). The symmetric addition product dimer of pentacene (s-dipentacene) is formed upon irradiation of a solution of pentacene. The structure of s-dipentacene was determined by X-ray crystallography. The crystals had a space group symmetry of P1 with two molecules per unit cell. One molecule in the unit cell was accompanied by two dichloromethane molecules of solvation. Photodecomposition of s-dipentacene, dispersed in a poly(methyl methacrylate) (PMMA) host matrix, to pentacene was studied. Spectroscopic evidence shows that this photodecomposition proceeds through a trapped intermediate both at low temperature (∼12 K) and at room temperature under high pressure (13 kbar). This intermediate is assigned as a “broken dimer” of two pentacene molecules trapped in the PMMA host. We previously reported similar results in the photolysis of both dianthracene and ditetracene at low temperatures, but this is the f...
42 citations
TL;DR: In this article, the density of states for the highest occupied molecular orbital band of pentacene film on the treated substrate is Gaussian with a width (variance) of $\ensuremath{\sigma}=0.07\ifmmode\pm\else\textpm\fi{}0.01\phantom{\rule{0.28em}{0ex}}\mathrm{eV}
Abstract: We report on direct high lateral resolution measurements of density of states in pentacene thin film transistors using Kelvin probe force microscopy. The measurements were conducted on passivated (hexamethyldisilazane) and unpassivated field effect transistors with 10- and 30-nm-thick pentacene polycrystalline layers. The analysis takes into account both the band bending in the organic film and the trapped charge at the SiO${}_{2}$\char21{}pentacene interface. We found that the density of states for the highest occupied molecular orbital band of pentacene film on the treated substrate is Gaussian with a width (variance) of $\ensuremath{\sigma}=0.07\ifmmode\pm\else\textpm\fi{}0.01\phantom{\rule{0.28em}{0ex}}\mathrm{eV}$ and an exponential tail. The concentration of the density of states in the gap for pentacene on bare SiO${}_{2}$ substrate was larger by one order of magnitude, had a different energy distribution, and induced Fermi level pinning. The results are discussed in view of their effect on pentacene thin film transistors' performance.
42 citations