Topic
Pentacene
About: Pentacene is a research topic. Over the lifetime, 5051 publications have been published within this topic receiving 161481 citations. The topic is also known as: 2,3:6,7-dibenzanthracene & benzo[b]naphthacene.
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TL;DR: In this paper, the authors used a heterostructure with pentacene as hole-transport and N,N′-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) as electrontransport material, and showed that simultaneous p-and n-channel formation can be observed in a single device.
Abstract: Ambipolar charge injection and transport are a prerequisite for a light-emitting organic fieldeffect transistor (OFET). Organic materials, however, typically show unipolar charge-carrier transport characteristics. Consequently, organic thin-film field-effect transistors based on a single material as active layer can typically either be operated as p- or as n-channel device. In this article we show that by using a heterostructure with pentacene as hole-transport and N,N′-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) as electron-transport material, ambipolar characteristics, i.e., simultaneous p- and n-channel formation, can be observed in a single device. An OFET structure is investigated in which electrons and holes are injected from Mg top and Au bottom contacts into the PTCDI-C13H27 and pentacene layers, respectively. Our device exhibits electron and hole mobilities of 3×10−3 and 1×10−4 cm2/V s, respectively. This device architecture serves as a model structure for ambipolar field-e...
198 citations
TL;DR: In this article, the authors report on fabrication and characterization of field effect transistors (FETs) on single-crystal pentacene and show that these FETs exhibit hole conductivity with room temperature effective mobility up to 0.30 cm2/Vs and on/off ratios up to 5*10^6.
Abstract: We report on fabrication and characterization of field effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room temperature effective mobility up to 0.30 cm2/Vs and on/off ratios up to 5*10^6. A negative gate voltage of -50V significantly decreases the activation energy (Ea) down to 0.143 eV near room temperature. Assuming thermal equilibrium between trapped and free carriers, from Ea = 0.143eV, we find the number of free carriers is only 0.4% of the total number of injected carriers. Along with effective mobility ~ 0.3 cm2/Vs this gives the intrinsic free carrier mobility of ~75 cm2/Vs.
198 citations
TL;DR: This study leads to both p- and n-channel organic thin-film transistors with high field-effect mobility and reveals that the position of the N atoms plays an important role in tuning the structures and properties of organic semiconductors based on N-heteropentacenes.
Abstract: An exploratory study on novel silylethynylated N-heteropentacenes, which have their N atoms on the terminal rings of the pentacene backbone, is reported. This study leads to both p- and n-channel organic thin-film transistors with high field-effect mobility and also reveals that the position of the N atoms plays an important role in tuning the structures and properties of organic semiconductors based on N-heteropentacenes.
197 citations
TL;DR: In this article, variable temperature contact resistance measurements on pentacene organic thin-film transistors via a gated four-probe technique are described. But the authors focus on the activation behavior of the source and drain electrodes.
Abstract: We describe variable temperature contact resistance measurements on pentacene organic thin-film transistors via a gated four-probe technique. The transistors consist of Au source and drain electrodes contacting a pentacene film deposited on a dielectric/gate electrode assembly. Additional voltage sensing leads penetrating into the source-drain channel were used to monitor potentials in the pentacene film while passing current between the source and drain electrodes during gate voltage sweeps. Using this device structure, we investigated contact resistance as a function of film thickness (60–3000A), deposition temperature (25 or 80°C), gate voltage, electrode geometry (top or bottom contact), and temperature. Contact resistance values were approximately 2×103–7×106Ωcm, depending on film thickness. In the temperature range of 77–295K, the contact resistance displayed activated behavior with activation energies of 15–160meV. Importantly, it was observed that the activation energies for the source and drain r...
197 citations
TL;DR: In this paper, a large interface dipole was measured for pentacene on Au(111) (0.95 eV) and a relatively small interface diphole was measured on SnS2 for Pentacene in ultrahigh vacuum.
Abstract: X-ray photoemission, ultraviolet photoemission spectroscopy (UPS), and scanning tunneling microscopy (STM) have been used to determine the energy level alignment and the molecular ordering of monolayer and submonolayer pentacene films on Au(111) in ultrahigh vacuum. Pentacene evaporated onto the van der Waals surface of SnS2 was used as a noninteracting substrate for comparison. A large interface dipole was measured for pentacene on Au(111) (0.95 eV) whereas pentacene on SnS2 showed a relatively small interface dipole (0.26 eV). The different interface dipoles are related to the different orientations of the pentacene molecules due to different pentacene substrate interaction energies. Differences in the UPS spectra also support changing molecular orientations of the two substrates. STM images of pentacene on Au(111) revealed that the molecules lay flat on the substrate and are oriented parallel to each other, forming striped structures that are commensurate with the Au(111) lattice. The pentacene coverag...
197 citations