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Pentacene

About: Pentacene is a research topic. Over the lifetime, 5051 publications have been published within this topic receiving 161481 citations. The topic is also known as: 2,3:6,7-dibenzanthracene & benzo[b]naphthacene.


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Journal ArticleDOI
TL;DR: In this article, the authors fabricated ultraflexible pentacene field effect transistors (FETs) with a mobility of 5 cm2 and an on/off ratio of 105, which are functional at the bending radius less than 1mm.
Abstract: We fabricated ultraflexible pentacene field-effect transistors (FETs) with a mobility of 05cm2∕Vs and an on/off ratio of 105, which are functional at the bending radius less than 1mm The transistors are manufactured on a 13-μm-thick polyimide film and covered by a 13-μm-thick poly-chloro-para-xylylene encapsulation layer so that transistors can be embedded at a neutral position This sandwiched structure can drastically suppress strain-induced changes in transistor characteristics Furthermore, the FETs show no significant change after bending cycles of 60 000 times on inward and outward bending stresses

154 citations

Journal ArticleDOI
TL;DR: In this paper, a model describing charge transport in disordered unipolar organic field effect transistors is presented, which can be used to calculate all regimes in unipolar as well as ambipolar organic transistors, by applying it to experimental data obtained from amI transistors based on a narrow gap organic molecule.
Abstract: A model describing charge transport in disordered ambipolar organic field-effect transistors is presented. The basis of this model is the variable-range hopping in an exponential density of states developed for disordered unipolar organic transistors. We show that the model can be used to calculate all regimes in unipolar as well as ambipolar organic transistors, by applying it to experimental data obtained from ambipolar organic transistors based on a narrow-gap organic molecule. The threshold voltage was determined independently from metal insulator semiconductor diode measurements. An excellent agreement between theory and experiment is observed over a wide range of biasing regimes and temperatures.

154 citations

Journal ArticleDOI
TL;DR: Using deoxyribonucleic acid (DNA)-based biopolymer, derived from salmon milt and roe sac waste by-products, for the gate dielectric region, a bio-organic field effect transistors (BiOFET) was proposed in this paper.
Abstract: Organic-based field-effect transistors (OFETs) utilize organic semiconductor materials with low electron mobilities and organic gate oxide materials with low dielectric constants. These have rendered devices with slow operating speeds and high operating voltages, compared with their inorganic silicon-based counter parts. Using a deoxyribonucleic acid (DNA)-based biopolymer, derived from salmon milt and roe sac waste by-products, for the gate dielectric region, we have fabricated an OFET device that exhibits very promising current-voltage characteristics compared with using other organic-based dielectrics. With minimal optimization, using a thin film of DNA-based biopolymer as the gate insulator and pentacene as the semiconductor, we have demonstrated a bio-organic-FET, or BiOFET, in which the current was modulated over three orders of magnitude using gate voltages less than 10V.

153 citations

Journal ArticleDOI
TL;DR: The study shows that surface engineering of organic semiconductors via adjusting the polarity of intramolecular bonds represents a generally viable alternative to the surface modification of substrates to control the energetics at organic/(in)organic interfaces.
Abstract: For the prototypical conjugated organic molecules pentacene and perfluoropentacene, we demonstrate that the surface termination of ordered organic thin films with intramolecular polar bonds (e.g., -H versus -F) can be used to tune the ionization energy. The collective electrostatics of these oriented bonds also explains the pronounced orientation dependence of the ionization energy. Furthermore, mixing of differently terminated molecules on a molecular length scale allows continuously tuning the ionization energy of thin organic films between the limiting values of the two pure materials. Our study shows that surface engineering of organic semiconductors via adjusting the polarity of intramolecular bonds represents a generally viable alternative to the surface modification of substrates to control the energetics at organic/(in)organic interfaces.

153 citations

Journal ArticleDOI
TL;DR: In this article, high carrier mobility was achieved for polycrystalline pentacene thin-film transistors by using a spin-coated spin-coat and thermal treatment.
Abstract: Since the 1990s, we have witnessed remarkable progress in organic semiconductor technology. [1] In particular, reasonably high carrier mobilities, exceeding those of amorphous silicon, were observed in thin-film transistors fabricated from a single crystal of rubrene. [2] In general, it is difficult to fabricate single crystals of aromatic compounds; therefore, zone-melt and Bridgeman crystal-growth [3] or vacuum crystal-growth techniques [4] are indispensable. Polycrystalline thin films are relatively easy to fabricate and suitable for practical devices. High carrier mobilities—of the order of 1 cm 2 V –1 s –1 —have been observed in field-effect transistor (FET) devices based on polycrystalline pentacene thin films. [5] However, defects and domain boundaries affect the carrier transport in aromatic polycrystalline thin films; therefore, the crystal growth under the vacuum process is rigorously controlled. [6] Device fabrication with a more practical solution process has been investigated. As well as conjugated polymers, [7] precursor methods in which thin films fabricated using soluble precursors are transformed to polycrystalline thin films by thermal treatment, [8] and solution-processable pentacene and anthradithiophene derivatives, which form polycrystalline thin films using a spin-coat method, have been investigated. [9] The field-effect mobilities in these studies are of the order of 10 –2 cm 2 , and the carrier mobility is increased up to 0.1 ≈ 1c m 2 V –1 s –1 by thermal treatment. [8,9] The optimum mobility is lower than those of the FET devices fabricated using vacuum deposition; the device characteristics strongly depend upon the film morphology, because the organic semiconductor thin films fabricated by the solution process have many defects and exhibit low carrier mobility.

152 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202382
2022176
2021111
2020125
2019151
2018159