Pentacene

About: Pentacene is a research topic. Over the lifetime, 5051 publications have been published within this topic receiving 161481 citations. The topic is also known as: 2,3:6,7-dibenzanthracene & benzo[b]naphthacene.

Effects of metal penetration into organic semiconductors on the electrical properties of organic thin film transistors

Abstract: To investigate the effects of metal penetration into organic semiconductors on the electrical properties of organic thin film transistors, gold was deposited onto pentacene films at various deposition rates. The sharp interface between the gold electrode and the pentacene film that results from a fast deposition rate was found to produce lower contact resistance and an increase in the field-effect mobility.

Organic semiconductor element

Abstract: An organic semiconductor thin film suitably employed in electronics, photonics, bioelectronics, or the like, and a method for forming the same. An organic semiconductor solution becoming the material of the organic semiconductor thin film, and an organic semiconductor element employing the organic semiconductor thin film are also provided. The transistor is obtained by forming a gate electrode (2), an insulator layer (3), a source electrode, and drain electrodes (4, 4) sequentially on a glass substrate (5) and then applying o-dichlorobenzene solution of pentacene (0.05% by mass) and drying thereby forming an organic semiconductor thin film (1). Since the organic semiconductor thin film (1) can be formed easily at a low cost and has substantially no defect, a transistor having excellent electronic characteristics can be provided.

A high-performance short-channel bottom-contact OTFT and its application to AM-TN-LCD

Abstract: We have demonstrated an organic thin-film-transistor (OTFT)-driven active-matrix twisted-nematic liquid crystal display (AM-TN-LCD) on a glass substrate, with a resolution of 160/spl times/120 pixels, 79 ppi. Substrate temperature was kept below the plastic-compatible temperature of 180/spl deg/C throughout the fabrication process. In order to realize an OTFT-driven display with fine resolution, we employed short-channel bottom-contact (BC) pentacene OTFTs. It has been known that their drivability is limited by contact resistance at source/drain (S/D). We found that the S/D contact resistance was markedly reduced when the thickness of the nonohmic Ti adhesion layer for ohmic Au S/D electrodes was reduced less than /spl sim/3 nm. We elucidate that this 3 nm corresponds to the thickness of the accumulating layer in a pentacene channel. When we use a self-assembled monolayer of mercapto-silane-coupling agent as the adhesion layer, the contact resistance becomes negligibly small and BC OTFTs scalable below 10 /spl mu/m were obtained. In addition to this OTFT-cell technology, we developed a low-damage pentacene patterning technique for integration of OTFTs and introduced low-temperature panel assembly process to suppress thermal-stress degradation of pentacene OTFTs, which are the key technologies to achieve OTFT-driven AM-TN-LCD.

Micron-scale organic thin film transistors with conducting polymer electrodes patterned by polymer inking and stamping

Abstract: We report organic thin film transistors (OTFTs) with conductive polymer poly (3,4-ethylenedioxythiophene)/poly(4-styrenesulphonate) (PEDOT) electrodes that are fabricated by a simple polymer inking and stamping technique. An OTFT channel length of 2μm has been achieved. This patterning technique is a purely additive process, which does not affect the functionality of the conductive polymers, and is fully compatible for patterning on a flexible substrate. Electrical characteristics of top contact (TC) pentacene TFTs with PEDOT electrodes is superior to those with gold electrodes due to a lower carrier injection barrier. Extracted contact resistance shows that the channel length of TC OTFTs can be further reduced to increase the drain current.

Solution-deposited zinc oxide and zinc oxide/pentacene bilayer transistors: high mobility n-channel, ambipolar and nonvolatile devices

Abstract: A solution processed n-channel zinc oxide (ZnO) field effect transistor (FET) was fabricated by simple dip coating and subsequent heat treatment of a zinc acetate film. The field effect mobility of electrons depends on ZnO grain size, controlled by changing the number of coatings and zinc acetate solution concentration. The highest electron mobility achieved by this method is 7.2 cm2 V−1 s−1 with On/Off ratio of 70. This electron mobility is higher than for the most recently reported solution processed ZnO transistor. We also fabricated bilayer transistors where the first layer is ZnO, and the second layer is pentacene, a p-channel organic which is deposited by thermal evaporation. By changing the ZnO grain size (or thickness) this type of bilayer transistor shows p-channel, ambipolar and n-channel behavior. For the ambipolar transistor, well balanced electron and hole mobilities are 7.6 × 10−3 and 6.3 × 10−3 cm2 V−1 s−1 respectively. When the ZnO layer is very thin, the transistor shows p-channel behavior with very high reversible hysteresis. The nonvolatile tuning function of this transistor was investigated.