Topic
Pentacene
About: Pentacene is a research topic. Over the lifetime, 5051 publications have been published within this topic receiving 161481 citations. The topic is also known as: 2,3:6,7-dibenzanthracene & benzo[b]naphthacene.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, the performance of organic field effect transistors (OFETs) with reduced graphene oxide (RGO)/polyvinylalcohol (PVA) composite electrodes was studied.
Abstract: The characteristics of organic field-effect transistors (OFETs) prepared with inkjet-patterned reduced graphene oxide (RGO)/poly(vinylalcohol) (PVA) composite electrodes were studied. PVA was blended with graphite oxide to enhance exfoliation of the graphite sheets and to provide for stable inkjet printing. Multistep reduction based on a combination of chemical and thermal reduction was conducted to increase the conductivity. Use of the inkjet-patterned RGO/PVA electrodes increased field-effect mobility of the bottom-contact pentacene FETs to 0.23 cm2/(V·s), which was significantly enhanced relative to that of FETs with Au or PEDOT:PSS electrodes. Moreover, we successfully prepared all-organic flexible transparent OFETs using inkjet-patterned RGO/PVA electrodes on plastic substrates.
93 citations
TL;DR: In this article, an n-type pentacene field effect transistor based on interface-doped Pentacene is demonstrated, laying a headstone for an organic complementary metal-oxide-semiconductor technology.
Abstract: The realization of an n-type pentacene field-effect transistor based on interface-doped pentacene is demonstrated, laying a headstone for an organic complementary-metal–oxide–semiconductor technology. The doping is performed by depositing traces of calcium onto the gate insulator before applying the organic semiconductor. Electron field-effect mobilities of 0.19cm2V−1s−1 are achieved. The field effect, i.e., the electron accumulation behavior, is studied by impedance spectroscopy and charge measurements on a metal–insulator–semiconductor (MIS) diode. A good correlation between the physical properties of the transistor and the MIS diode can be reported. A temporal dynamics and a hysteresislike accumulation behavior are observed, both explainable by the influence of deep electron traps.
93 citations
TL;DR: In this article, the authors combined density functional theory and many-body perturbation theory calculations, along with polarization-dependent optical absorption spectro-microscopy on ordered domains, to investigate the nature of low-energy excitons within ordered domains of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-PEN) thin films.
Abstract: Theory and experiment are combined to investigate the nature of low-energy excitons within ordered domains of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-PEN) polycrystalline thin films. First-principles density functional theory and many-body perturbation theory calculations, along with polarization-dependent optical absorption spectro-microscopy on ordered domains, show multiple low-energy absorption peaks that are composed of excitonic states delocalized over several molecules. While the first absorption peak is composed of a single excitonic transition and retains the polarization-dependent behavior of the molecule, higher energy peaks are composed of multiple transitions with optical properties that can not be described by those of the molecule. The predicted structure-dependence of polarization-dependent absorption reveals the exact inter-grain orientation within the TIPS-PEN film. Additionally, the degree of exciton delocalization can be significantly tuned by modest changes in the solid-state structure and the spatial extent of the excitations along a given direction is correlated with the degree of electronic dispersion along the same direction. These findings pave the way for tailoring the singlet fission efficiency of organic crystals by solid-state structure.
92 citations
TL;DR: In this article, an organic thin film transistors were fabricated by vacuum evaporation of pentacene using different growth conditions in order to tune the Pentacene layer morphology.
92 citations
TL;DR: In this article, the influence of channel thickness on the field effect hole mobility in TFTs was investigated and the optimum channel thickness was determined to be about 30 nm by thermal evaporation on Al2O3+x dielectric films.
Abstract: We report on the influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin-film transistors (TFTs) that employ the top-contact mode for the source/drain electrodes. Our pentacene channel layers were deposited in the thickness range of 16–90 nm by thermal evaporation on 450 nm thick Al2O3+x dielectric films. The TFTs with increasingly thinner pentacene layers displayed correspondingly higher hole mobility, but an optimum thickness was determined to be about 30 nm because the TFTs with pentacene layers thinner than 30 nm exhibited high leakage current in the off-state bias regime. After a proper chemical treatment was performed onto the Al2O3+x gate dielectric, our optimized TFT with a 30 nm thick pentacene channel exhibited high mobility of ∼0.2 cm2/V s with an on/off current ratio of 105.
92 citations