Topic
Pentacene
About: Pentacene is a research topic. Over the lifetime, 5051 publications have been published within this topic receiving 161481 citations. The topic is also known as: 2,3:6,7-dibenzanthracene & benzo[b]naphthacene.
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TL;DR: Compared to fluorination, the presence of Cl and N atoms in pentacene not only reduces the influence of functionalization on lambda and affords a larger window for tuning HOMO and LUMO energies, but also provides the opportunity to promote pi-stacked structures through ClCl and C--HN interactions.
Abstract: For the widely studied high-carrier-mobility species, pentacene, it is found that perfluorination turned it into an n-type organic field-effect transistor (OFET), but doubled the internal reorganization energy (lambda) of the electron/hole hopping. Here, Cl- and N-functionalized pentacenes are designed to test two strategies that may reduce the impact of functionalization on lambda. Calculation results show that the strategies are feasible. Moreover, combined with crystal-structure data of Cl- and N-functionalized aromatic compounds, it is concluded that compared to fluorination, the presence of Cl and N atoms in pentacene not only reduces the influence of functionalization on lambda and affords a larger window for tuning HOMO (highest occupied molecular orbital) and LUMO (lowest unoccupied molecular orbital) energies, but also provides the opportunity to promote pi-stacked structures through ClCl and C--HN interactions.
90 citations
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TL;DR: In this paper, high-performance organic thin-film transistors with top contact geometry using silver source and drain electrodes that are directly patterned on pentacene film by inkjet printing were fabricated.
Abstract: We have fabricated high-performance organic thin-film transistors with top contact geometry using silver source and drain electrodes that are directly patterned on pentacene film by inkjet printing. Ink droplets containing Ag nanoparticles were ejected from inkjet nozzles. By controlling wave forms applied to piezoelectric actuators in these nozzles, the volume of the droplets can be changed from 17 to 1.4 pl. When the volume of the droplets is reduced, dc characteristics of manufactured transistors are improved significantly. The transistors manufactured with droplets of 1.4 pl exhibit a mobility of 0.3 cm2/Vs and an on-off current ratio that exceeding 106.
90 citations
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TL;DR: In this paper, the effect of oxygen on a pentacene field effect transistor (FET) with and without exposure to light using the displacement current measurement was examined, and it was shown that the threshold voltage is lowered and shifted across the zero bias and even to the polarity against hole injection.
Abstract: It is widely accepted that atmospheric oxygen can work as an electron-accepting dopant mainly to p-type organic semiconductors. We have examined the effect of oxygen on a pentacene field effect transistor (FET) with and without exposure to light using the displacement current measurement. Under vacuum conditions, the change in the displacement current due to hole injection from the source and drain electrodes to the pentacene layer is clearly observed, suggesting that the origin of the mobile carriers in the pentacene FET is carrier injection. When the FET is exposed to oxygen under dark conditions, a very small change in the threshold gate voltage for hole injection is observed. In contrast, with exposure to both oxygen and light, we observed that the threshold voltage is lowered and shifted across the zero bias and even to the polarity against hole injection. This photoinduced doping effect induces a distinct increase in the drain current of the FET, and it is maintained for at least several hours even ...
90 citations
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TL;DR: In this paper, the hole injection barrier (HIB) at 6P/CP interfaces exhibited a transition from almost Schottky-Mott limit-like behavior to Fermi-level pinning.
Abstract: Contacts between two molecular organic semiconductors [p-sexiphenyl (6P) and pentacene] and conducting polymers (CPs) were investigated with photoemission spectroscopy. The dependence of the hole injection barrier (HIB) at 6P/CP interfaces on substrate work function (ϕ) exhibited a transition from almost Schottky-Mott limit-like behavior to Fermi-level pinning. For pentacene, no significant variation of the HIB as function of ϕ was observed, despite the large range of ϕ spanned by the CPs (4.4–5.9eV). The results on contacts with CPs are compared to those with metals, where none of the two limiting cases for HIBs as a function of ϕ was observed.
90 citations