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Perovskite (structure)
About: Perovskite (structure) is a research topic. Over the lifetime, 51482 publications have been published within this topic receiving 1541750 citations.
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TL;DR: The results explain why the perovskite MALHs can be an efficient semiconductor, even when grown using simple solution processes, and suggest that the n-/p-type can be efficiently manipulated by controlling growth processes.
Abstract: One of the major merits of CH3NH3PbI3 perovskite as an efficient absorber material for the photovoltaic cell is its long carrier lifetime. We investigate the role of the intrinsic defects of CH3NH3PbI3 on its outstanding photovoltaic properties using density-functional studies. Two types of defects are of interest, i.e., Schottky defects and Frenkel defects. Schottky defects, such as PbI2 and CH3NH3I vacancy, do not make a trap state, which can reduce carrier lifetime. Elemental defects like Pb, I, and CH3NH3 vacancies derived from Frenkel defects act as dopants, which explains the unintentional doping of methylammonium lead halides (MALHs). The absence of gap states from intrinsic defects of MALHs can be ascribed to the ionic bonding from organic–inorganic hybridization. These results explain why the perovskite MALHs can be an efficient semiconductor, even when grown using simple solution processes. It also suggests that the n-/p-type can be efficiently manipulated by controlling growth processes.
750 citations
TL;DR: An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated.
Abstract: An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated Perovskite solar cells based on using Cu-doped NiOx HTL show a remarkably improved power conversion efficiency up to 1540% due to the improved electrical conductivity and enhanced perovskite film quality General applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study
743 citations
TL;DR: In this article, the dielectric, ferroelectric and piezoelectric properties of perovskite and bismuth layer-structured BLSF (BLSF) ceramics are described as superior candidates for lead-free, lead free, and low-cost piezolectric materials to reduce environmental damages.
Abstract: Dielectric, ferroelectric and piezoelectric properties of perovskite ferroelectric and bismuth layer-structured ferroelectric (BLSF) ceramics are described as superior candidates for lead-free piezoelectric materials to reduce environmental damages. Perovskite type ceramics seem to be suitable for actuator and high power applications that are required a large piezoelectric constant, d 33 (>300 pC/N) and a high Curie temperature, T c (>200 °C). For BaTiO 3 (BT)-based solid solutions, that is, (1 − x )BaTiO 3 − x (Bi 0.5 K 0.5 )TiO 3 [BTBK − 100 x ] ceramics, the T c increases with increasing the amount of x . BTBK-20 + MnCO 3 0.1 wt.% ceramic shows the high T c than 200 °C and the electromechanical coupling factor, k 33 = 0.35. In the case of a (Bi 1/2 Na 1/2 )TiO 3 − b BaTiO 3 − c (Bi 1/2 K 1/2 )TiO 3 [BNBK (100 a /100 b /100 c )] solid solution ceramics, the d 33 and T c are 191 pC/N and 301 °C for the BNBK (85.2/2.8/12), respectively. On the other hand, BLSF ceramics seem to be excellent candidates as piezoelectric sensors for high temperatures and ceramic resonators with high mechanical quality factor ( Q m ), and low temperature coefficient of resonance frequency (TC- f r ). Donor-doped Bi 4 Ti 3 O 12 ceramics such as Bi 4 Ti 3− x Nb x O 12 [BITN- x ] and Bi 4 Ti 3− x V x O 12 [BITV- x ] show high T c than 650 °C. The k 33 value of the grain-oriented (HF) BITN-0.08 ceramic is 0.39 and is able to keep the same value up to 350 °C. Bi 3 TiTaO 9 (BTT)-based solid solution system, Sr x −1 Bi 4− x Ti 2− x Ta x O 9 [SBTT2( x )] (1 ≦ x ≦ 2), displays the high Q m value (=13500) in (p)-mode at the x = 1.25 composition.
742 citations
TL;DR: A high-performance novel photodetector is demonstrated, which consists of graphene and CH3 NH3 PbI3 perovskite layers that exhibits a dramatically enhanced photo responsivity and effective quantum efficiency over a broad bandwidth within the UV and visible ranges.
Abstract: A high-performance novel photodetector is demonstrated, which consists of graphene and CH3 NH3 PbI3 perovskite layers. The resulting hybrid photodetector exhibits a dramatically enhanced photo responsivity (180 A/W) and effective quantum efficiency (5× 10(4) %) over a broad bandwidth within the UV and visible ranges.
742 citations
TL;DR: A new trimethylaluminum vapor-based crosslinking method to render the nanocrystal films insoluble is applied, coupled with the natural confinement of injected charges within the perovskite crystals, facilitates electron-hole capture and gives rise to a remarkable electroluminescence yield.
Abstract: The preparation of highly efficient perovskite nanocrystal light-emitting diodes is shown. A new trimethylaluminum vapor-based crosslinking method to render the nanocrystal films insoluble is applied. The resulting near-complete nanocrystal film coverage, coupled with the natural confinement of injected charges within the perovskite crystals, facilitates electron-hole capture and give rise to a remarkable electroluminescence yield of 5.7%.
740 citations