Perovskite (structure)

About: Perovskite (structure) is a research topic. Over the lifetime, 51482 publications have been published within this topic receiving 1541750 citations.

Highly Luminescent Cesium Lead Halide Perovskite Nanocrystals with Tunable Composition and Thickness by Ultrasonication

Abstract: We describe the simple, scalable, single-step, and polar-solvent-free synthesis of high-quality colloidal CsPbX3 (X=Cl, Br, and I) perovskite nanocrystals (NCs) with tunable halide ion composition and thickness by direct ultrasonication of the corresponding precursor solutions in the presence of organic capping molecules. High angle annular dark field scanning transmission electron microscopy (HAADF-STEM) revealed the cubic crystal structure and surface termination of the NCs with atomic resolution. The NCs exhibit high photoluminescence quantum yields, narrow emission line widths, and considerable air stability. Furthermore, we investigated the quantum size effects in CsPbBr3 and CsPbI3 nanoplatelets by tuning their thickness down to only three to six monolayers. The high quality of the prepared NCs (CsPbBr3) was confirmed by amplified spontaneous emission with low thresholds. The versatility of this synthesis approach was demonstrated by synthesizing different perovskite NCs.

Lead iodide perovskite light-emitting field-effect transistor.

Abstract: Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.

Interpretation and evolution of open-circuit voltage, recombination, ideality factor and subgap defect states during reversible light-soaking and irreversible degradation of perovskite solar cells

Abstract: Metal halide perovskite absorber materials are about to emerge as a high-efficiency photovoltaic technology. At the same time, they are suitable for high-throughput manufacturing characterized by a low energy input and abundant low-cost materials. However, a further optimization of their efficiency, stability and reliability demands a more detailed optoelectronic characterization and understanding of losses including their evolution with time. In this work, we analyze perovskite solar cells with different architectures (planar, mesoporous, HTL-free), employing temperature dependent measurements (current–voltage, light intensity, electroluminescence) of the ideality factor to identify dominating recombination processes that limit the open-circuit voltage (Voc). We find that in thoroughly-optimized, high-Voc (≈1.2 V) devices recombination prevails through defects in the perovskite. On the other hand, irreversible degradation at elevated temperature is caused by the introduction of broad tail states originating from an external source (e.g. metal electrode). Light-soaking is another effect decreasing performance, though reversibly. Based on FTPS measurements, this degradation is attributed to the generation of surface defects becoming a new source of non-radiative recombination. We conclude that improving long-term stability needs to focus on adjacent layers, whereas a further optimization of efficiency of top-performing devices requires understanding of the defect physics of the nanocrystalline perovskite absorber. Finally, our work provides guidelines for the design of further dedicated studies to correctly interpret the diode ideality factor and decrease recombination losses.

Photovoltaic Switching Mechanism in Lateral Structure Hybrid Perovskite Solar Cells

Abstract: In this study, long range electromigration of methylammonium ions (MA+) in methyl ammonium lead tri-iodide (MAPbI3) film is observed directly using the photo­thermal induced resonance technique. The electromigration of MA+ leads to the formation of a lateral p-i-n structure, which is the origin of the switchable photovoltaic effect in MAPbI3 perovskite devices.

Monolithic perovskite/silicon-heterojunction tandem solar cells processed at low temperature

Abstract: Tandem solar cells combining silicon and perovskite absorbers have the potential to outperform state-of-the-art high efficiency silicon single junction devices. However, the practical fabrication of monolithic silicon/perovskite tandem solar cells is challenging as material properties and processing requirements such as temperature restrict the device design. Here, we fabricate an 18% efficient monolithic tandem cell formed by a silicon heterojunction bottom- and a perovskite top-cell enabling a very high open circuit voltage of 1.78 V. The monolithic integration was realized via low temperature processing of the semitransparent perovskite sub-cell where an energetically aligned electron selective contact was fabricated by atomic layer deposition of tin oxide. The hole selective, transparent top contact was formed by a stack of the organic hole transport material spiro-OMeTAD, molybdenum oxide and sputtered indium tin oxide. The tandem cell design is currently limited by the photocurrent generated in the silicon bottom cell that is reduced due to reflectance losses. Based on optical modelling and first experiments, we show that these losses can be significantly reduced by combining optical optimization of the device architecture including light trapping approaches.