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Showing papers on "Phase-shift mask published in 2019"


Patent
07 Feb 2019
TL;DR: In this article, the authors characterized a phase shift film, a light shielding film, and a hard mask film on a transparent substrate, and showed that the latter has a higher oxygen content at a surface on the hard mask side than the former.
Abstract: The mask blank (100) in which a phase shift film (2) made of a material containing silicon, a light shielding film (3) made of a material containing chromium, oxygen, and carbon, and a hard mask film (4) made of a material containing one or more elements selected from silicon and tantalum are provided in this order on a transparent substrate (1) is characterized in that the light shielding film (3) is a single layer film having a composition gradient portion with an increased oxygen content at a surface on the hard mask film (4) side and in a region close thereto, the light shielding film (3) has a maximum peak of N1s narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy of lower detection limit or less, and a part of the light shielding film (3) excluding the composition gradient portion has a chromium content of 50 atom % or more and has a maximum peak of Cr2p narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy at binding energy of 574 eV or less

5 citations


Patent
23 May 2019
TL;DR: A phase shift mask for transferring a layout in a photolithography process includes a substrate and a patterned phase shift layer as mentioned in this paper, which is disposed on the substrate and includes at least one device pattern aperture and a plurality of dummy pattern apertures.
Abstract: A phase shift mask for transferring a layout in a photolithography process includes a substrate and a patterned phase shift layer. The patterned phase shift layer is disposed on the substrate and includes at least one device pattern aperture and a plurality of dummy pattern apertures, the device pattern aperture and the dummy pattern apertures expose the surface of the substrate, and the dummy pattern apertures are disposed around the device pattern aperture. The patterned phase shift layer has a predetermined thickness such that the phase difference between the light passing through the patterned phase shift layer and the light passing through the device pattern aperture or the dummy pattern apertures during the photolithography process is 180 degrees. The transmittance ratio of the patterned phase shift layer is 100%.

2 citations



Patent
28 Nov 2019
TL;DR: In this paper, a photomask inspection device was proposed to detect diffraction patterns of a phase shift part 8b of an 80-mm phase shift mask 80 using a Fourier transformation lens and a first optical sensor.
Abstract: To provide a photomask inspection device capable of detecting a diffraction pattern that is more suitable for measurements.SOLUTION: A photomask inspection device 1 measures pattern characteristics of a phase shift part 8b of a phase shift mask 80. The photomask inspection device 1 includes a holding part 90, an irradiation part 10, a slit mask 24, a Fourier transformation lens 25 and a first optical sensor 27. The holding part 90 holds the phase shift mask 80. The irradiation part 10 irradiates a region including a light-transmitting part 8a and the phase shift part 8b with light. The slit mask 24 has a slit 24a and is disposed at a position where light that has been transmitted through a part in the width direction of the light-transmitting part 8a and through the whole area in the width direction of the phase shift part 8b passes through the slit 24a. The light that has passed through the slit 24a enters the Fourier transformation lens 25. The first optical sensor 27 detects a diffraction pattern of the light from the Fourier transformation lens 25 at a plurality of timings.SELECTED DRAWING: Figure 2

Patent
28 Nov 2019
TL;DR: In this paper, the phase shift mask has a transfer pattern including a patterned phase shift film on a transparent substrate and a light-transmitting portion where the transparent substrate is exposed.
Abstract: To provide a photomask exhibiting excellent transfer property, with which a resist pattern in an advantageous shape can be formed upon transferring a pattern, a method for designing a photomask, a photomask blank, and a method for manufacturing a display device.SOLUTION: The photomask has a transfer pattern including a patterned phase shift film on a transparent substrate. The transfer pattern includes a phase shift portion where the phase shift film is formed on the transparent substrate, and a light-transmitting portion where the transparent substrate is exposed. Among a phase shift amount (degree) φto g-line, a phase shift amount (degree) φto h-line and a phase shift amount (degree) φto i-line of the phase shift mask, φ>φis satisfied and φis a closest value to 180 degrees among these φ, φand φ.SELECTED DRAWING: Figure 3

Patent
26 Apr 2019
TL;DR: In this paper, a manufacturing method of a mold including nanopatterns comprises the steps of: forming a first photosensitizer pattern; heat-treating the first photosensor pattern to reflow the same; forming a phase shift mask through the first photoensor pattern.
Abstract: According to the present invention, a manufacturing method of a mold including nanopatterns comprises the steps of: forming a first photosensitizer pattern; heat-treating the first photosensitizer pattern to reflow the same; forming a first phase shift mask through the first photosensitizer pattern; forming a second photosensitizer pattern by using the first phase shift mask; repeating the photosensitizer pattern reflow step, the phase shift mask forming step and the photosensitizer pattern forming step; and growing a metal coating layer on the photosensitizer patterns to form a nano mold. Therefore, the manufacturing method of the present invention can obtain a mold including nano patterns enabling nano-sized patterns to be formed by reflowing the photosensitizer patterns to be formed in a hemispherical shape, manufacturing the phase shift mask through the hemispherical photosensitizer patterns and using the phase shift mask in a phase shift exposure process.

Patent
03 Sep 2019
TL;DR: In this article, a phase shift mask blank is presented, which utilizes a cross section shape that can sufficiently exert the phase shift effect for configuration on phase shift film and has high transmissivity.
Abstract: The invention provides a phase shift mask blank which utilizes a cross section shape that can sufficiently exert a phase shift effect for performing configuration on a phase shift film and has high transmissivity. The phase shift mask blank has a phase shift film on a transparent substrate, and an etching mask film on the phase shift film. The phase shift mask blank is characterized in that the phase shift mask blank utilizes an etching mask film pattern with an expected pattern on the etching mask film as the film; through performing wet type etching on the phase shift film, the phase shift mask with the phase shift film pattern is formed on the transparent substrate; the phase shift film comprises transition metal, silicon and oxygen; the content of the oxygen is above 5atom% and below 70atom%; and in an area from an interface to a depth of 10nm, the content of the oxygen relative to the silicon is lower than 3.0.

Patent
22 Jul 2019
TL;DR: In this article, the phase shift mask comprises a spacer pattern and a phase shift pattern including a platinum group material, wherein the spacer patterns and the phase shifts are stacked alternately and repeatedly.
Abstract: The present invention relates to a phase shift mask and a production method thereof. The phase shift mask comprises: a spacer pattern; and a phase shift pattern including a platinum group material, wherein the spacer pattern and the phase shift pattern are stacked alternately and repeatedly.

Patent
03 Jan 2019
TL;DR: In this article, the phase shift mask blank is provided with a transparent substrate, a phase shift layer, an etching stopper layer, and a light blocking layer laminated on the surface of the transparent substrate.
Abstract: This mask blank is provided with: a transparent substrate; a phase shift layer laminated on the surface of the transparent substrate, said phase shift layer having Cr as a major component; an etching stopper layer laminated on the phase shift layer; and a light blocking layer laminated on the etching stopper layer, said light blocking layer having Cr as a major component. The phase shift layer, the etching stopper layer, and the light blocking layer are etched using a same etchant, thereby enabling to manufacture a phase shift mask wherein an edge of a light blocking pattern formed in the light blocking layer is disposed, in a plan view, at a position retracted from an edge of a phase shift pattern laminated on the phase shift layer.

Patent
31 Oct 2019
TL;DR: A phase shift mask (PSM) as discussed by the authors includes a light transmitting substrate, where the phase shifter includes a plurality of semiconductor and dielectric layers stacked in an alternating fashion.
Abstract: A phase shift mask (PSM) includes a light transmitting substrate. The PSM further includes a phase shifter over the light transmitting substrate, wherein the phase shifter includes a plurality of semiconductor layers and a plurality of dielectric layers stacked in an alternating fashion.

Patent
15 Aug 2019
TL;DR: A manufacturing method for a phase shift mask plate and a phase-shift mask was proposed in this article, which consists of forming a metal shielding layer pattern (201) on a base substrate (100), sequentially forming a phase change layer (400) and a first photoresist layer (500) on the metal shielding surface, and etching the phase change mask plate with the first mask pattern (501) as a mask pattern.
Abstract: A manufacturing method for a phase shift mask plate, and a phase shift mask, said manufacturing method comprising: forming a metal shielding layer pattern (201) on a base substrate (100); sequentially forming a phase change layer (400) and a first photoresist layer (500) on the metal shielding layer pattern (201); patterning the first photoresist layer (500) with the metal shielding layer pattern (201) as a mask pattern, so as to form a first photoresist layer pattern (501); and etching the phase change layer (400) with the first photoresist layer pattern (501) as a mask pattern, so as to form a phase change layer pattern (401).

Patent
Lee Jae Uk1, Kim Ryan Ryoung Han
22 May 2019
TL;DR: A mask for extreme-UV lithography, of attenuated phase shift mask type, comprises a substrate (1), a reflecting structure (2) and attenuating and phase shifting portions (3). And an additional capping layer (4) covers at least sidewalls (SW) of the portions as discussed by the authors.
Abstract: A mask for extreme-UV lithography, of attenuated phase shift mask type, comprises a substrate (1), a reflecting structure (2) and attenuating and phase-shifting portions (3). An additional capping layer (4) covers at least sidewalls (SW) of the portions (3). It allows reducing a reflection of an incident beam of extreme-UV on the sidewalls of the portions, so that reflection peaks on opposite sides of each attenuating and phase-shifting portion are substantially identical. An additional protection function for the mask during cleaning processes is also provided by the capping layer.

Patent
01 Jan 2019
TL;DR: In this article, a phase shift mask blank is formed by stacking, on a substrate transparent to an exposure wavelength, an etching mask film having resistance to fluorine-based etching (F system) and non-oxygen containing chlorine-based (Cl system), and capable of being etched by oxygen-containing chlorine based (Cl/O system) etching.
Abstract: The purpose of the present invention is to obtain a phase shift mask with an improved size, wherein an undercut does not occur in a lower layer light-blocking film when the phase shift mask is fabricated. This phase shift mask blank is formed by stacking, on a substrate transparent to an exposure wavelength, a phase shift film having resistance to oxygen-containing chlorine-based etching (Cl/O system) and non-oxygen containing chlorine-based etching (Cl system), and capable of being etched by fluorine-based etching (F system), a light-blocking film having resistance to oxygen-containing chlorine-based etching (Cl/O system), and capable of being etched by non-oxygen containing chlorine-based etching (Cl system), and an etching mask film having resistance to fluorine-based etching (F system) and non-oxygen containing chlorine-based etching (Cl system), and capable of being etched by oxygen-containing chlorine-based etching (Cl/O system), and does not have an etching stopper layer between the phase shift film and the substrate.