Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Phase-shift mask technology: requirements for e-beam mask lithography

Abstract: Phase-shifted patterns (alternating, 90-degree, and chromeless) have been incorporated into a reticle layout, fabricated with a MEBESR III system, and evaluated experimentally at 365 nm using steppers with numerical aperture (NA) ranging from 0.4 to 0.48 and partial coherence ranging from 0.38 to 0.62. Test circuit layouts simulate actual circuit designs with critical dimensions ranging from 0.2 micrometers to 1.2 micrometers . These results, combined with experimental measurement of layer to layer registration and aerial image simulations, provide a first-order assessment of e-beam lithography requirements to support phase-shift mask technology.

Alternating phase shift mask and method for fabricating the alignment monitor

Abstract: A new process for fabricating an alternating phase-shifting photomask having an alignment monitor is described. An opaque layer is provided overlying a substrate. The opaque layer is patterned to provide a mask pattern. A phase-shifting pattern is formed on the substrate wherein a portion of the phase-shifting pattern comprises an alignment monitor whereby alignment between the mask pattern and the phase-shifting pattern can be tested.

Application of charge-dissipation material in MEBES phase-shift mask fabrication

Abstract: Several charge dissipation materials were evaluated for their ability to improve the overlay accuracy during phase shift mask (PSM) registered writing on a MEBES system. These included an organic conductive polymer and a number of thin inorganic films, which were applied above or below the resist on a coated mask. When used with the resists, all conductive materials evaluated were capable of providing adequate charge dissipation during registered writing. Overlay accuracy of mean + 3 sigma

Tri-tone attenuated phase shift trim mask for double exposure alternating phase shift mask process

Abstract: Employing a tri-tone attenuated phase shift trim mask in the second exposure of a double exposure alternating phase shift mask (alt-PSM) process is disclosed. A semiconductor wafer is first exposed utilizing a dark field alt-PSM, and then secondly is exposed utilizing a tri-tone attenuated PSM. The tri-tone attenuated PSM may include a transparent substrate, such as quartz, an opaque layer, such as chrome, and an attenuated layer, such as 6% transparency molybdenum silicide (MoSi). The opaque layer has a pattern corresponding to polysilicon gates to be imprinted on the semiconductor wafer, to protect the polysilicon photoresist patterns. The attenuated layer includes assist features to protect forbidden pitch semi-isolated field polysilicon patterns and isolated field polysilicon patterns to be imprinted on the semiconductor wafer.

Mask blank, phase shift mask manufacturing method and template manufacturing method

Abstract: A phase shift mask blank 10 having a very thin film (a chromium nitride film) 2 provided on a quartz substrate 1 for forming a phase shift pattern 1 P and a resist film 3 formed thereon is used as a material, a resist pattern 3 P is formed on the resist film 3 , the very thin film 2 is etched by using the resist pattern as a mask, thereby forming a very thin film pattern 2 P, the quartz substrate 1 is etched by using the very thin film pattern 2 P as the mask, thereby forming the phase shift pattern 1 P, and a light shielding film 4 is formed on the substrate 1 over which the formation of the phase shift pattern 1 P and the removal of the resist pattern 3 are completed, and the light shielding film 4 is subjected to selective etching by using a resist 5 , thereby exposing the phase shift pattern 1 P while leaving a shielding portion 4 A in a necessary part. Thus, a phase shift mask 20 is obtained. The thickness of the very thin film 2 is set to be a minimum thickness required for forming a phase shift pattern on the quartz substrate 1 by using the very thin film pattern 2 P as the mask.