Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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Patent•
19 Mar 2003
TL;DR: In this article, a phase shift mask is disposed forward of a laser device through a beam expander, a homogenizer, and a mirror, and the processed substrate is held at a specified position by using a substrate chuck such as a vacuum chuck and an electrostatic chuck.
Abstract: A crystallization device, wherein a phase shift mask (5) is disposed forward of a laser device (1) through a beam expander (2), a homogenizer (3), and a mirror (4), a processed substrate (7) is installed on a surface opposite to the phase shift mask (5) through an image formation optical system (6), and the processed substrate (7) is held at a specified position by using a substrate chuck (8) such as a vacuum chuck and an electrostatic chuck.
8 citations
Patent•
TSMC1
TL;DR: In this article, a two-step process is used to form an equivalent shifter layer with about the same light transmittance and phase angle shift as an original, non-defective shifter mask.
Abstract: A method for repairing shifter layer defects in a phase shifting mask. A two step process is used to form an equivalent shifter layer with about the same light transmittance and phase angle shift as an original, non-defective shifter layer. (Typically for a DUV APSM, transmittance is about 6% and phase angle shift is about 180 degrees.) The first step is to etch the quartz substrate in a focus ion beam repair machine, using XeF 2 gas, to cause a leading phase angle shift. The second step is to deposit an equivalent shifter layer in-situ in the focus ion beam repair machine, using a carbon based gas. When the equivalent shifter layer has about the same transmittance as the original shifter layer (e.g. 6%), the phase angle is lagging less than 180 degrees. The leading phase angle shift caused by etching the quartz substrate and the lagging phase angle caused by the equivalent shifter layer combine to produce a phase angle 180 degrees leading.
8 citations
08 Dec 1991
TL;DR: In this paper, the authors developed a mask pattern design algorithm for phase shift lithography process that produces pattern dimension linearity regardless of the pattern size and does not require any special CAD (computer-aided design) technique.
Abstract: The authors have developed a mask pattern designing algorithm for a phase-shift lithography process. This algorithm produces pattern dimension linearity regardless of the pattern size and does not requires any special CAD (computer-aided design) technique. The authors also developed a mask fabrication technique with self-aligned shifters. One can avoid the alignment problem of chromium and shifter pattern by the self-aligning mask process. >
8 citations
26 May 1995
TL;DR: In this paper, an alternating phase shift mask (PSM) was used to check the usefulness of an alternating PSM and applied to 1.0 micrometers pitch gate-poly pattern of a mask-ROM device.
Abstract: In order to check the usefulness of an alternating Phase Shift Mask (PSM), we fabricated one and applied to 1.0 micrometers pitch gate-poly pattern of a mask-ROM device. Etched quartz type was used and multiphase shifter method was adopted using a g-line positive tone photoresist. Practically, defect-free PSM could be obtained through 4 times voting method. PSM was written with CORE-2564-PSM reticle writer which showed fast writing speed and simple second layer fabrication due to free of charge dissipation layer, making voting method easily possible. We used the g-line stepper having numerical aperture (NA) of 0.54 and coherence factor ((sigma) ) of 0.5. From this experiment we obtained depth of focus (DOF) of 1.0 micrometers which was the same as that of i-line case (Na 0.45, (sigma) 0.5) and was twice wider than that of conventional g-line case. And there was no loss of critical dimension uniformity for PSM. Conventional i-line reticle and g-line alternating PSM were applied to real device fabrication. Final electrical yield analysis revealed no difference between the two cases, indicating that application of alternating PSM to device fabrication is very promising. Device characteristics of two cases were almost same in speed and low Vcc margin, too.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
8 citations
Patent•
31 May 1994
TL;DR: In this article, a halftone phase shift exposure mask is produced by forming a film of the material on a transparent substrate, exposing the film with light or radiation in a pattern, and developing to obtain a desired pattern.
Abstract: PURPOSE:To provide a halftone phase shift mask which can be easily produced and can be easily used, a material which forms a translucent part to be used for the production of the halftone phase shift mask, and the production method of the halftone phase shift mask. CONSTITUTION:(1) The material to form a translucent part for the production of a halftone phase shift mask consists of SOG containing a dye and a photosensitive agent, a photosensitive polyimide containing die, or the like. The material has absorption for exposure light and photosensitivity or sensitivity for radiation and has phase shifting property to shift the phase of exposure light transmitting through the material. (2) The halftone phase shift exposure mask has a light transmitting part 2a and a translucent part 3a. The translucent part consists of the material of (1). (3) The halftone phase shift exposure mask is produced by (I) forming a film of the material (1) on a transparent substrate 1, exposing the film with light or radiation in a pattern, and (II) developing to obtain a desired pattern.
8 citations