Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Automatic alternative phase-shift mask CAD layout tool for gate shrinkage of embedded DRAM in logic below 0.18 μm

Abstract: An automatic alternative phase shift mask (PSM) pattern layout tool has been newly developed. This tool is dedicated for embedded DRAM in logic device to shrink gate line width with improving line width controllability in lithography process with a design rule below 0.18 micrometers by the KrF excimer laser exposure. The tool can crete Levenson type PSM used being coupled with a binary mask adopting a double exposure method for positive photo resist. By using graphs, this tool automatically creates alternative PSM patterns. Moreover, it does not give any phase conflicts. By adopting it to actual embedded DRAM in logic cells, we have provided 0.16 micrometers gate resist patterns at both random logic and DRAM areas. The patterns were fabricated using two masks with the double exposure method. Gate line width has been well controlled under a practical exposure-focus window.

Alternating phase-shift mask and binary mask for 45-nm node and beyond: the impact on the mask error control

Abstract: For 45 nm node and beyond, the alternating phase-shift mask (alt. PSM), one of the most expected resolution enhancement technologies (RET) because of its high image contrast and small mask error enhancement factor (MEEF), and the binary mask (BIM) attract attention. Reducing CD and registration errors and defect are their critical issues. As the solution, the new blank for alt. PSM and BIM is developed. The top film of new blank is thin Cr, and the antireflection film and shielding film composed of MoSi are deposited under the Cr film. The mask CD performance is evaluated for through pitch, CD linearity, CD uniformity, global loading, resolution and pattern fidelity, and the blank performance is evaluated for optical density, reflectivity, sheet resistance, flatness and defect level. It is found that the performance of new blank is equal to or better than that of conventional blank in all items. The mask CD performance shows significant improvement. The lithography performance of new blank is confirmed by wafer printing and AIMS measurement. The full dry type alt. PSM has been used as test plate, and the test results show that new blank can almost meet the specifications of pi-0 CD difference, CD uniformity and process margin for 45 nm node. Additionally, the new blank shows the better pattern fidelity than that of conventional blank on wafer. AIMS results are almost same as wafer results except for the narrowest pattern. Considering the result above, this new blank can reduce the mask error factors of alt. PSM and BIM for 45 nm node and beyond.

Method for manufacturing a semiconductor device using half-tone phase-shift mask to transfer a pattern onto a substrate

Abstract: A pattern is transferred to a resist film on a wafer by a reduction projection exposure method using a half-tone phase-shift mask in which is formed a half-tone phase-shifter pattern including a thin-film pattern functioning as an attenuator and a resist pattern functioning as the photosensitive composition for phase adjustment. This method improves the accuracy of dimensions of the pattern transferred to the wafer.

Reticle haze: an industrial approach

Abstract: Crystal growth on advanced reticles is currently a world wide industrial problem in high end semiconductor production environment, crystals are mainly found on reticles that use high energy photons at 193nm wavelength. The most common crystals to be found on masks are ammonium sulphate, a combination of sulphate, from maskshop residues after clean, pellicle materials and storage conditions and amines from clean room, tool and storage environments. High energy photons act as a catalyst to form crystals on both the pattern side as well as the backglass surface. After a number of exposures crystals can grow in size and eventually become printable. In order to detect HAZE before critical dimensions have been reached suitable detection methods need to be implemented to ensure image integrity. These detection methods are different and complementary depending on the surface to be inspected. Once crystals have started growing, the only method to regain mask quality is to clean the mask at the manufacturers site. This brings with it several undesirable situations, not only is the mask unavailable for production but the cleaning of a mask leads to a potential risk of damaging the mask especially for sub resolution patterns such as scatter bars and phase and transmission changes for eaPSM (Embedded Attenuated Phase Shift Mask) masks. This paper will discuss the initial haze issues seen in a 300mm wafer fab and actions put in place to address the problem. An explanation of results gained from haze reduction actions implemented in a wafer fab will be given. Haze seen by reticle inspection and surface analysis tools can be characterised by typical contamination patterns. These signatures appear after a certain number of wafers exposed depending on several reticle variables such as transmission, Binary, eaPSM, Pellicle. Details will be given of how reticles are managed to ensure minimum impact to a production environment with an appropriate reticle control plan. AMC (Airborne Molecular Contamination) in wafer fab and equipment environment is a key factor for crystal growth. The type of filtration installed to reduce AMC and method of atmospheric monitoring for critical areas will be explained. Choice of reticle storage conditions and materials used for transport during the life of the reticle will be included. Improvements in maskshop cleaning processes, reticle materials and environmental control have lead to extended mask lifetime in the wafer fab of more than 20 times. The fundamental differences and relative monitoring will be described and gain from implemented actions will be presented Once crystals have started growing, the only method to regain mask quality is to clean the mask at the manufacturers site. This brings with it several undesirable situations, not only is the mask unavailable for production but the cleaning of a mask leads to a potential risk of damaging the mask especially for sub resolution patterns such as scatter bars and phase and transmission changes for eaPSM (Embedded Attenuated Phase Shift Mask) masks. This paper will discuss the initial haze issues seen in a 300mm wafer fab and actions put in place to address the problem. An explanation of results gained from haze reduction actions implemented in a wafer fab will be given. Haze seen by reticle inspection and surface analysis tools can be characterised by typical contamination patterns. These signatures appear after a certain number of wafers exposed depending on several reticle variables such as transmission, Binary, eaPSM, Pellicle. Details will be given of how reticles are managed to ensure minimum impact to a production environment with an appropriate reticle control plan. AMC (Airborne Molecular Contamination) in wafer fab and equipment environment is a key factor for crystal growth. The type of filtration installed to reduce AMC and method of atmospheric monitoring for critical areas will be explained. Choice of reticle storage conditions and materials used for transport during the life of the reticle will be included. Improvements in maskshop cleaning processes, reticle materials and environmental control have lead to extended mask lifetime in the wafer fab of more than 20 times. The fundamental differences and relative monitoring will be described and gain from implemented actions will be presented

Method for manufacturing halftone type phase shift mask and blank of halftone type phase shift mask

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for a mask enabling shortening of the time needed for the acceptance of an order through the completion of a product and inspecting of a mask blank as it is before the completion of a mask product and a blank necessary for this. SOLUTION: This method comprises of the steps of: depositing successively a semi-transparent phase shift layer 4, a light shielding layer 5, a first resist layer 6; forming a first resist film by patterning only a peripheral portion outside an effective area into a predetermined shape; forming a light-shielding film 5' by patterning the light-shielding layer through etching; peeling off the first resist film 6'; examining the semi-transparent phase shift layer exposed in the effective area; depositing a second resist layer 7 on a structure thus formed; forming a second resist film 7' whose shape corresponds to a shape of a main pattern; forming a semi-transparent phase shift film 4' by patterning the semi-transparent phase shift layer by etching; and peeling off the second resist film.