Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Direct phase shift measurement between interference patterns using aerial image measurement tool

Abstract: A method of measuring the phase shift between two regions of a phase shift mask. A workpiece is provided including a first pair of slits each having a substantially similar phase shift characteristic and a second pair of slits each having a different phase shift characteristic. Electromagnetic radiation is directed through the first pair of slits and the second pair of slits on the workpiece. A relative shift is measured between interference patterns caused by the first pair of slits and the second pair of slits.

Halftone phase shift mask blank, halftone phase shift mask and their preparation

Abstract: In a halftone phase shift mask blank comprising a halftone phase shift film on a substrate which is transparent to exposure light, the halftone phase shift film comprises a metal, silicon, and optionally oxygen and nitrogen. The halftone phase shift film experiences a phase difference change of up to 1 deg. and a transmittance change of up to 0.2% before and after it is exposed to light in a cumulative dose of 1 kJ/cm 2 . The halftone phase shift film has excellent resistance to exposure light, specifically high-energy exposure light of short wavelength such as ArF or F 2 laser beam (193 or 157 nm).

Apparatus and method for manufacturing crystallized semiconductor film and phase shift mask

Abstract: PROBLEM TO BE SOLVED: To maintain a reverse peak in which a light intensity becomes '0' in a phase shift part even when scattering exists in the illumination light of a phase shift mask. SOLUTION: A PSM 5 and the substrate 7 to be treated are approached and disposed, and a shielding region a of D≥2Ztanθ, wherein Z is a gap between the PSM 5 and the substrate 7, θ is a scattering angle (half angle) of the incident light to the PSM 5, and D is a width, is provided in the phase shift part of the PSM 5. COPYRIGHT: (C)2004,JPO

Fine pattern formation

Abstract: PURPOSE: To provide a fine pattern formation method which improves resolution and enables easy and high resolution pattern transfer without causing complication of mask manufacturing process and shifter arrangement algorithm when forming a desired resist pattern by using a Levinson type phase shift mask. CONSTITUTION: In a fine pattern formation method wherein a pattern formed in a mask 10 is transferred to a wafer 16 through a projection optical system 15, the mask 10 is such that a mask part corresponding to a desist pattern is an opening part 13, the other mask part is a light screening part 12, and phase shifters 14 for sifting the phase of illumination light by 180° are arranged in every other opening parts 13. After transmitted image of the mask 10 is exposed to a positive resist 17 applied to the wafer 16, heating treatment is performed in vapor of basic substance. After exposure is performed for the resist 17, development is carried out. COPYRIGHT: (C)1994,JPO&Japio

Phase shift mask and method for fabricating same

Abstract: A phase shift mask including two phase shift film patterns formed on one or both surfaces of a transparent substrate such that their optical paths overlap with each other On one of the phase shift film patterns, a phase shift film pattern having a space size smaller than that of the associated phase shift film pattern is formed, so that three phase shifts of light can be generated with reference to the phase shift film pattern, thereby causing an interference among adjacent light beams Such a light interference results in an improvement in the image contrast and an increase in the gradient of the light intensity graph As a result, it is possible to achieve an easy fabrication of micro patterns and an improvement in the process margin, operation reliability and process yield The invention also provides a method for fabricating such a phase shift mask