Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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Patent•
20 Feb 1997
TL;DR: In this article, a phase shift mask of a phase difference 200 degree was used to flatten the focal characteristic of a projection lens, and the depth of focus was expanded by nearly 0.2μm.
Abstract: PROBLEM TO BE SOLVED: To expand the depth of focus and to improve pattern size precision in a semiconductor element by flattening a focal characteristic of a phase shift mask. SOLUTION: The exposure is performed adding spherical aberration of 0.1λ to a projection lens system and using the phase shift mask of a phase difference 200 degree giving a phase error 20 degree answering to its spherical aberration amount. Thus, the depth of focus is expanded by nearly 0.2μm by flattening the focal characteristic than the case of usual phase difference 180 degree/ spherical aberration 0, and the pattern size precision in the semiconductor element is improved.
6 citations
Patent•
27 Jan 1994
TL;DR: In this paper, a phase shift mask of a halftone system and its production method is presented. But the method is not suitable for the case of light leakage from a light shielding region.
Abstract: PURPOSE: To prevent extinction of desired mask pattern by light leaking from a light shielding region with a phase shift mask of a halftone system and its production method. CONSTITUTION: The mask pattern 4A of a chip region A of this phase shift mask consists of a translucent film 4 and the mask pattern 2B and light shielding region C of a scribing line region B consist of an opaque film 2. The process for production thereof comprises successively forming the opaque film 2 and a resist film 3 on a transparent substrate 1, then exposing the resist film 3 of the chip region A and completely etching away the opaque film 2 of the chip region A after development. After the translucent film 4 is deposited thereon, the remaining resist film 3 is peeled and thereafter, the chip region A and the scribing line region B are patterned to form the mask patterns 4A, 2B. COPYRIGHT: (C)1995,JPO
6 citations
Patent•
27 Dec 2004
TL;DR: In this article, a halftone phase shift mask blank was constructed on a transparent substrate, where the surface layer of the semi-transparent film has ≤ 15 atm% oxygen content, the surface layers of the mask has ≤ 5 atm metal content, and the film thickness of the film is ≥ 1 nm.
Abstract: PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank and a halftone phase shift mask having superior light resistance and chemical resistance and favorable production yield of a mask, without causing changes in transmittance or changes in a phase angle even when the wavelength of exposure light is as short as 200 nm or shorter. SOLUTION: The halftone phase shift mask blank 10 has a semi-transparent film 2, having a predetermined transmittance at the wavelength of exposure light, with mainly nitrogen, metal and silicon as the constituents, formed on a transparent substrate 1, wherein the surface layer of the semi-transparent film 2 has ≤15 atm% oxygen content, the surface layer of the semi-transparent film 2 has ≤5 atm% metal content, and the film thickness of the surface layer is ≥1 nm. The semi-transparent film 2 is patterned to obtain the halftone phase shift mask 20 having a semi-transparent portion 2a formed in the film. COPYRIGHT: (C)2006,JPO&NCIPI
6 citations
06 Oct 2006
TL;DR: In this paper, the attenuated phase shift mask (att.PSM) was evaluated by using the 3D electro-magnetic field simulator and the results showed that high-transmission att. PSM has better MEEF and partially better DOF than those of 6%-transmission MoSi type.
Abstract: The attenuated phase-shift mask (att. PSM) is one of resolution enhancement technologies (RET) and has been
widely adopted for several device layers. And the high-transmission att. PSM, which has various structures and
transmittances, can be expected to have the advantages in process window. In this paper, the lithographic performances
(Contrast, MEEF and DOF) of high-T att. PSM were evaluated by using the 3D electro-magnetic field simulator. The
results showed that high-T att. PSM has better MEEF and partially better DOF than those of 6%-transmission MoSi
type. As the transmittance is getting higher, the smaller line CD is needed for OPC adjustment especially at narrow
pitch. In respect of film structure, it is found that there is no large difference among three high-T att. PSMs except for
MEEF at specific pitch. Remaining chrome on the high-T films causes the trade-off between contrast and MEEF. The
simulation results are compared with AIMS results measured by AIMS TM 45-193i of Carl Zeiss. The AIMS results of
actual masks agree with no-Hopkins mode simulation very well, while they do not agree with Hopkins mode simulation
especially at narrow pitch. Because the azimuthal polarization does not cause contrast loss, the differences between
AIMS mode (conventional) and Scanner mode (vector effect emulation) are small.
6 citations
Patent•
30 Jan 2008TL;DR: In this article, the first positive photo resist has a dense hole pattern and a second positive resist is formed to fill each of the plurality of holes of the pattern, which is then projected and exposed.
Abstract: On a film as an object of processing, a first positive photo-resist having a dense hole pattern is formed. On the first positive photo-resist, a second positive photo-resist is formed to fill each of the plurality of holes of the pattern. To the second photo-resist, an image of dark points as a bright-dark inverted image of a high-transmittance half-tone phase shift mask is projected and exposed. By the development of second photo-resist, a pattern of dots of the second photo-resist formed at portions of the dark point image are left in any of the plurality of holes of the pattern. The film as the object of processing is patterned, using the first and second photo-resists as a mask.
6 citations