Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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19 Jul 2000
TL;DR: In this article, the phase angle and transmittance of half-tone phase shift mask (HT PSM) were controlled for the first generation of ArF lithography, which is expected for the next generation optical lithography.
Abstract: ArF lithography which is expected for the next generation optical lithography is adapted for 0.13 micrometers design-rule and beyond. ArF half-tone phase shift mask (HT PSM) will be applied as 1st generation of ArF lithography. Also ArF PSM cleaning demands by means of tighter controls related to phase angle, transmittance and contamination on the masks. Phase angle on ArF HT PSM should be controlled within at least +/- 3 degree and transmittance controlled within at least +/- 3 percent after cleaning process and pelliclization. In the cleaning process of HT PSM, requires not only the remove the particle on mask, but also control to half-tone material for metamorphosis. Contamination defects on the Qz of half tone type PSM is not easy to remove on the photomask surface. New technology and methods of cleaning will be developed in near future, but we try to get out for limit contamination on the mask, without variation of phase angle and transmittance after cleaning process.
6 citations
IBM1
TL;DR: In this article, a transmission optical interferometer based on a modification of an optical, laser scanning reflection profilometer was used for direct phase shift measurements in phase shift masks.
Abstract: We have made direct phase shift measurements in phase shift masks using a transmission optical interferometer based upon a modification of an optical, laser scanning reflection profilometer. Measurements were carried out at 632.8 nm in transparent samples that consisted of thin films of SiO2 on fused silica substrates and thin films of SiO2 and Al2O3 on fused silica substrates. Measurements were also performed on attenuated phase shift mask blanks. The phase values measured at 632.8 nm were corrected for refractive index and wavelength for 248 nm.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
6 citations
Patent•
22 Dec 1997
TL;DR: In this article, a phase shift mask pattern for confirmation and adjustment of the focusing position is proposed, which is composed of a rectangular light-shielding pattern 11 and a first phase shifter pattern 13a, 13b on both sides of the light shield pattern and adjacent to the longer side of the pattern 11.
Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask pattern which is suitable for confirmation and adjustment of the focusing position. SOLUTION: This mask pattern 100 is composed of a rectangular light- shielding pattern 11 and a first phase shifter pattern 13a and a second phase shifter pattern 13b on both sides of the light-shielding pattern 11 and adjacent to the longer sides of the pattern 11, and as a whole, the mask pattern 100 is formed rectangular, the first and second phase shifter patterns 13a, 13b are arranged symmetric around the axis S which passes through the center of the light-shielding pattern 1 and is parallel to the long sides.
6 citations
Patent•
13 Jul 2000
TL;DR: The phase shift mask blank obtained by disposing at least one phase shift film consisting essentially of a metal and silicon on a transparent substrate, etching selectivity ratio (B/A) is ≥ 5.0 in reactive ion etching when a pattern is formed in the mask blank.
Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask blank less liable to excessive etching of the substrate in the production of a phase shift mask, having good controllability of the phase contrast of a pattern part and good intrasurface uniformity and adaptable to further refining and higher integration of a semiconductor integrated circuit and to provide a phase shift mask and a method for producing these. SOLUTION: In the phase shift mask blank obtained by disposing at least one phase shift film consisting essentially of a metal and silicon on a transparent substrate, etching selectivity ratio (B/A) which is the ratio of the etching rate (B) of the phase shift film to the etching rate (A) of the transparent substrate is ≥5.0 in reactive ion etching when a pattern is formed in the phase shift mask blank. COPYRIGHT: (C)2002,JPO
6 citations
Patent•
27 Apr 2001TL;DR: In this paper, a photoresist mask used in the fabrication of an integrated circuit is described, which can include a first portion having a phase characteristic, a second portion being located proximate the first portion and having the same phase characteristic as the first part, and a segment disposed between the first and second portions to prevent phase conflict between the second portion and the first.
Abstract: A photoresist mask used in the fabrication of an integrated circuit is described. This mask can include a first portion having a phase characteristic; a second portion being located proximate the first portion and having the same phase characteristic as the first portion; and a segment disposed between the first portion and the second portion to prevent phase conflict between the first portion and the second portion.
6 citations