Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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08 Mar 1999
TL;DR: In this article, a halftone phase shift mask blank is produced by DC sputtering of a mixture target of metal and silicon, and the amount of silicon in the mixture target is 70 to 95 mol.
Abstract: PROBLEM TO BE SOLVED: To provide a producing method of a halftone phase shift mask, having a semitransparent part which is superior in film characteristics such as acid resistance, light resistance, conductivity, refractive index (film thickness), transmittance, phase shift amount and etching selectivity, and to provide a producing method of a phase shift mask blank. SOLUTION: By the producing method of a phase shift mask blank, a transparent substrate 1 is disposed in an atmosphere of gaseous mixture, containing nitrogen, and a semitransparent thin film 3a comprising nitrogen, metal and silicon as the main structural elements, is formed on the transparent substrate 1 by DC sputtering of a mixture target of metal and silicon. The amount of silicon in the mixture target is 70 to 95 mol.%. COPYRIGHT: (C)1999,JPO
6 citations
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27 Nov 2000
TL;DR: In this article, the half tone type phase shift mask blank has a transparent substrate 10, a half tone material film 11 and a metallic film 12 laminated on the half-tone material film is made from a material containing nitrogen.
Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask and a phase shift mask blank capable of high precision patterning and high in acid resistance and reliability. SOLUTION: In the half tone type phase shift mask blank having a transparent substrate 10, a half tone material film 11 and a metallic film 12 laminated on the half tone material film, at least a material of the metallic film in contact with the half tone material film is made from a material containing nitrogen. COPYRIGHT: (C)2001,JPO
6 citations
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31 Mar 2005TL;DR: In this article, a halftone phase shift mask blank consisting of a substrate, a light absorbing film, and a phase shifter film is presented, where at least one layer of the phase shift film contains at least 90 atom% of silicon and a plurality of metal elements.
Abstract: In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom% of silicon and a plurality of metal elements, typically Mo and Zr or Hf.
6 citations
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09 Mar 1995
TL;DR: In this paper, a method for fabricating a phase shift mask is described, in which an etching groove is formed on the light shielding portion of the quartz substrate and chrome is then formed in the center of the etching hole.
Abstract: A method for fabricating a phase shift mask is disclosed. In order to make the phase shift mask, an etching groove is formed on the light shielding portion of the quartz substrate and chrome is then formed on the center portion of the etching groove. The phase shift mask produces a phase shift effect without using phase shift materials, thereby increasing the optical contrast.
6 citations
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11 Jun 1993
TL;DR: In this paper, the phase shift mask has a light shield film, a phase shifter, and matching marks 12 and 12' on a substrate, and the matching marks are of size smaller than a resolution limit or provided on the film.
Abstract: PURPOSE:To form the fine pattern of the mask or phase shift mask with high precision. CONSTITUTION:The phase shift mask has a light shield film, a phase shifter, and matching marks 12 and 12' on a substrate, and the matching marks 12 and 12' are of size smaller than a resolution limit or provided on the light shield film. When the pattern of the phase shifter of the phase shift mask is positioned with the matching marks 12 and 12', drawn, and formed, the matching marks are provided where the formation of an element pattern is not impeded or deleted after the pattern forming. While the pattern is positioned repeatedly with the matching marks at desired intervals of time, the pattern is drawn by irradiation with an electron beam to form the pattern of the light shield film and phase shifter.
6 citations