Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Halftone phase-shift mask, blank for it, and manufacture of halftone phase-shift mask

Abstract: PURPOSE: To enable high-definition patterning on a halftone phase-shift mask by preventing a substrate from being electrified when a resist is being drawn by electron-ray exposure and to simplify the processes required to complete the phase-shift mask. CONSTITUTION: A halftone material film 2 and a resist film 3 are stacked on a substrate 1 to fabricate a blank 7. The halftone material film 2 is formed by a two-layer structure comprising a nonconductive MoSiON film 5 and a conductive CrO film 6. With the two-layer structure maintained, the thicknesses of the films 5, 6 are adjusted so that the film 2 can have the desired transmittance as a halftone material. The conductive film 6 prevents the substrate 1 from being electrified during electron-ray exposure that is performed for the patterning of the resist film 3. Etching is carried out with a resist pattern 3a as a mask to form a phase-shifter pattern 2a, thereby completing a halftone phase-shift mask 8. COPYRIGHT: (C)1996,JPO

ICP quartz etch uniformity improvement for phase-shift mask fabrication

Abstract: The Quartz etch improvement program is established to technically understand and ascertain the limits, hardware implications and process conditions associated with the etching of Quartz Photomasks. This study explores several process parameters as well as salient hardware changes and ultimately analyzes results by etching test Photomasks as well as a test structure closely emulating a Levenson-style Phase Shift Photomask.

I-line stepper lithographic method for phase-shift mask patterning

Abstract: PROBLEM TO BE SOLVED: To provide a method for improving the patterning of an integrated circuit by use of bright field photolithography by a positive photo resist. SOLUTION: In the manufacture of an integrated circuit, lithography is performed in a plurality of levels by use of a phase shift mask by a step-and- repeat optical tool. The assignment of phase for this phase shift mask is determined by a technique of determining the intersections of a gate pattern and an active gate pattern without superposing the assignment, dividing the intersections into several kinds of stacks, and using slightly different phase assignment regulations to the different stacks.

Phase shift mask, manufacturing method thereof and haze defect detection method thereof

Abstract: The invention relates to a phase shift mask, a manufacturing method thereof and a haze defect detection method thereof in the technical field of semiconductors. The phase shift mask comprises a mask substrate, at least one cutting slide, a plurality of device patterns, at least one detection pattern, and a light blocking zone. The manufacturing method of the phase shift mask comprises the following steps: 1, preparing the mask substrate; 2, preparing the at least one detection pattern; 3, preparing the device patterns; and 4, manufacturing the light blocking zone. The haze defect detection method of the phase shift mask comprises the following steps: 1, exposing patterns on the phase shift mask to a photoresist layer of a wafer; 2, developing; 3, carrying out detect detection scanning on the wafer, and determining the phase shift mask is unqualified when haze defects appear on the detection pattern of the wafer and haze defects also appear on the device patterns of the wafer. According to the invention, the time for cleaning the phase shift mask can be timely and accurately determined, online detection is realized, the consumed time is short, and the cost is low.

Phase-shift mask applications

Abstract: Phase-shifted masks (PSMs) promise significant performance benefits for conventional optical lithography. By simultaneously enhancing resolution and depth of focus (DOF), some PSM techniques offer lithography improvements equivalent to more than a 30% reduction of exposure wavelength. Existing wafer exposure equipment can be adapted to PSM use without extensive modification. However, widespread use of PSM technology must await the creation of a PSM infrastructure, including automated generation of PSM patterns, new mask-making materials, and production worthy PSM manufacturing equipment and methods. Modified CAD software, phase layer mask exposure, phase layer deposition, etch, inspection, repair, and other supporting equipment are still in research or development phases. The integration of PSM methodologies and processes to mask and wafer production facilities has not yet begun. In this paper PSM manufacturing and application issues will be examined, with emphasis on PSM reticle printing, PSM reticle requirements and PSM manufacturing alternatives. The authors report on the performance of a scanned laser mask lithography system optimized for printing multilayer phase-shift masks. This system leverages the sub-half micron printing performance of the ATEQ CORE-2500 combined with an optical alignment system. The use of 363.8 nm exposure wavelength offers significant advantages for making PSMs. Chrome alignment marks under dielectric phase and resist layers are accurately and nondestructively acquired with a nonactinic illumination system. The exposure wavelength, near i-line, does not cause or react to dielectric substrate charge. Optimum performance is achieved with common i-line resists which also provide ideal process performance for phase layer deposition and dry etching.