Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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TL;DR: In this article, the phase shift between multilayer and absorber on a mask differs depending on the total thickness variation and the monolayer thickness of 40 Si/Mo bilayers.
Abstract: Pattern printability was examined while varying the thickness of a multilayer mask blank by simulation. The variations were related to the total thickness and the monolayer thickness of 40 Si/Mo bilayers. Printability was evaluated by using the pattern edge contrast for a binary mask and an attenuated phase shift mask (att-PSM). The total thickness variation degrades pattern edge contrast with decreasing exposure energy on a wafer. The phase shift between multilayer and absorber on a mask differs depending on the total thickness variation. The phase shift due to the total thickness variation gives rise to the focal position shift as a function of exposure wavelength for both the binary mask and the att-PSM. The phase shift and the focal position shift of the binary mask are different from those of the att-PSM. Monolayer thickness variation did not affect the printability of both the binary mask and the att-PSM.
6 citations
Patent•
05 Oct 1994TL;DR: The double destruction phase shift mask as mentioned in this paper combines transparent phase shifting regions and attenuating phase shift regions to form interference patterns in light projected through the mask which reduce the light intensity to nearly zero in the regions of the projected light corresponding to pattern elements.
Abstract: This invention describes the use and methods of fabrication of a double destruction phase shift mask. The double destruction phase shift mask combines transparent phase shifting regions and attenuating phase shifting regions to form interference patterns in light projected through the mask which reduce the light intensity to nearly zero in the regions of the projected light corresponding to pattern elements. This eliminates the ghost line which can occur with conventional phase shifting masks. The double destruction phase shift mask provides improved depth of focus and edge definition.
6 citations
Patent•
05 Jul 2002
TL;DR: In this article, the phase shift mask blank and the phase shifter are used to provide a phase shift masks blank and a phase shifters are formed with a film based on a fluorine doped metal silicide.
Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask blank having a phase shifter formed with a film based on a fluorine doped metal silicide as a phase shift mask blank obtained by forming at least one phase shifter on a transparent substrate and to provide a phase shift mask and a method for producing the phase shift mask. SOLUTION: The phase shift mask blank and phase shift mask have satisfactory transmittance and age stability even when a short wavelength light source is used and have such high performance that they can be adapted to the refining and higher integration of a semiconductor integrated circuit.
6 citations
Patent•
10 Nov 1992
TL;DR: In this article, a defect inspecting device for a phase shift mask whose phase shift part and transparent part are easily discriminated was proposed. But the defect detector was used to discriminate whether or not there is a defect.
Abstract: PURPOSE:To provide a defect inspecting device for a phase shift mask whose phase shift part and transparent part are easily discriminated. CONSTITUTION:A downward lighting system and a transmission lighting system are provided with light sources 11 and 21, aperture stops 12 and 22, wavelenght selection filters 13 and 23, and lens systems respectively. The wavelength of downward illumination light is selected so as to meet conditions under which the phase shift part is seen brightly by interference between reflected light beams from the top surface and reverse surface of a phase shift film and the wavelength of transmitted illumination light is selected so as to satisfy conditions under which the phase shift part is seen darkly. The transmitted light and/or reflected light from the mask passes through an objective lens 2 to form a pattern image on an image pickup element 4. The signal from the image pickup element 4 is compared by a comparing circuit with design data, etc., to discriminate whether or not there is a defect. Further, the pattern image is displayed even on a monitor 10 and a light shield part, the phase shift part, and the transparent part are seen in different colors in the presence of both downward lighting and transmission lighting.
6 citations
Patent•
16 Nov 2012TL;DR: A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask as discussed by the authors, which includes a transparent substrate and a pattern of halftones phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen.
Abstract: A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a halftone phase shift mask. The mask includes a transparent substrate and a pattern of halftone phase shift film of a material comprising a transition metal, silicon, nitrogen and oxygen and having an atomic ratio (Met/Si) of 0.18-0.25, a nitrogen content of 25-50 atom%, and an oxygen content of 5-20 atom%. The mask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm2.
6 citations