Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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23 Feb 1993
TL;DR: In this article, the phase shift mask with a light transmission part of the main region part and a phase shift part was used to enable transfer exposing with a high resolution effect to be performed.
Abstract: PURPOSE:To enable transfer exposing with a high resolution effect to be performed and a phase shift mask to be used for the conventional steppers as it is by forming the phase shift mask with a light transmission part of the main region part and a phase shift part and forming at least a part of the periphery part exclusive of the main region part with a light shielding part. CONSTITUTION:A transparent substrate 1 is an optically transparent material as a material for photomasks and an etching stopper layer 2 is a material having high transparency to an exposing wavelength, although the adequate material is selected according to an etching method. Further, a phase shift layer 3 is preferably an optically transparent material and its film thickness is preferably set at the film thickness at which the phase inversion quantity of transmitted light correspond to 180 deg.. A light shielding layer 5 consists of a metal and metal oxide. Finally, a photoresist layer 7 is provided and is subjected to exposing and developing. Only the light shielding film 5 of the main region part 11 is removed by etching. Further, a translucent light shielding film 15 is formed. Patterns are then formed by executing resin coating, electron beam plotting and developing. The translucent light shielding layer 15, the light shielding layer 5 and further the phase shift layer 3 are etched away with these patterns as a mask.
6 citations
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02 Jun 1992TL;DR: In this article, a modified annular illumination method known as PHOENEX (Photolithography enhanced by modified exposure) is discussed, which effectively cuts off the background element, which does not contribute to the imaging.
Abstract: A modified annular illumination method known as PHOENEX (Photolithography enhanced by modified exposure) is discussed. Compared with annular illumination, the modified illumination effectively cuts off the background element, which does not contribute to the imaging. In this study, the process latitudes of the modified illumination are evaluated using experiments and simulations. The DOF limit is doubled compared to the conventional method. The optical contrast is improved by the shifter-shade-type phase shift mask. The resolution limit is also improved by the modified illumination. >
6 citations
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10 Jun 1998TL;DR: In this article, an alternating phase shift mask consisting of a phase shift layer formed between a light-penetrable substrate and a sheltering layer is defined as a penetrating region.
Abstract: A alternating phase shift mask comprises a phase shift layer formed between a light-penetrable substrate and a sheltering layer. The sheltering layer covers a sheltered region formed on the phase shift layer. The section of the light-penetrable substrate exposed by the phase shift layer and the sheltering layer is defined as a penetrating region. Incident light forms a phase angle of 180° in the penetrating region and the sheltering layer to make constructive interference and to enhance the resolution of photolithographic process.
6 citations
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12 Oct 2021TL;DR: In this article, the optimal absorber structure was selected in consideration of phase shift and reflectance, and imaging performance and process latitude were calculated through computational simulation, and the optimal structure was chosen by considering various factors constituting the EUV photomask, including phase shift, reflectance and absorbance of the absorber.
Abstract: As semiconductor technology became more integrated, the numerical aperture (NA) of extreme ultraviolet (EUV) exposure technology has increased from 0.33 to 0.55 to realize finer patterning. High NA EUVL aims to enable 8 nm half pitch resolution. As the NA increases and a smaller linewidth needs to be implemented, the mask 3D effects on patterning will become more severe. For mass production of EUV, it is essential to find an optimal absorber structure to alleviate serious problems such as mask 3D effects and shadowing effects. Among the various factors constituting the EUV photomask, phase shift and reflectance of the absorber are the most important factors that determine the image quality. Through computational simulation, the optimal structure was selected in consideration of phase shift and reflectance, and imaging performance and process latitude were calculated.
6 citations
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30 Sep 2011TL;DR: In this paper, the inverse lithography technique identifies an objective function, minimizes the objective function in relation to a simulation of the optical lithographic process, such that the transmission value, which is greater than 6%, may be determined.
Abstract: Various implementations of the invention provide for generation of a high transmission phase shift mask layout through inverse lithography techniques. In various implementations of the present invention, a set of mask data having a plurality of pixels is generated. The transmission value associated with each pixel may then be determined through an inverse lithography technique. With various implementations of the invention, the inverse lithography technique identifies an objective function, minimizes the objective function in relation to a simulation of the optical lithographic process, such that the transmission value, which is greater than 6%, may be determined.
5 citations