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Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.


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Patent
10 Nov 1995
TL;DR: In this article, the phase shift mask is corrected at pattern edges simultaneously with pinhole treatment of the phase inversion mask. But, the work is limited to phase shift masks.
Abstract: PURPOSE:To improve quality in production of a phase shift mask and to prevent degradation in the yield thereof by executing correction of chipping patterns at pattern edges simultaneously with pinhole treatment of the phase shift mask relating to a method for correcting the phase shift mask in semiconductor production and more specifically a method for correcting chipping (drop-out defect) of light shielding patterns of phase inversion films, light shielding films, etc. CONSTITUTION:Regions including at least the chipping defect 5 of the opening patterns 4 of the halftone phase inversion film 3 of the phase shift mask 1 are opened by a laser shot and are coated with a resist film 7. Normal opening patterns 4 are again opened at this film. The regions including at least the chipping defect 15 of the opening patterns 14 of the light shielding film 13 of the phase shift mask 11 are covered with a resist film 16 and main patterns 17 are formed by etching at a mask substrate 12; in succession, the chipping defect 19 of the shift patterns 18 is coated with a shielding film 20.

5 citations

Patent
17 Oct 2002
TL;DR: In this paper, an imaginary correction pattern is devised according to the pattern of a mask layer that is disposed on the surface of a transparent plate constituting the body of the mask.
Abstract: A mask pattern of a phase shift mask for use in photolithography is repaired. First, an imaginary correction pattern is devised according to the pattern of a mask layer that is disposed on the surface of a transparent plate constituting the body of the mask. The surface of the mask body is etched to a predetermined depth according to the imaginary correction pattern, at a location adjacent the mask layer, to thereby form a recess in the mask body. A phase shifter having a predetermined thickness is then formed by depositing phase shifting material in the recess.

5 citations

Proceedings ArticleDOI
05 Jul 2000
TL;DR: In this paper, the authors demonstrate a technique to print high-density windows using attenuated phase shift mask, negative photoresist and ArF exposure tool and compare their result with that obtained using a binary mask and positive photoresists.
Abstract: We demonstrate a technique to print. high-density windows using attenuated phase shift mask, negative photoresist and ArF exposure tool and compare our result with that obtained using a binary mask and positive photoresists.

5 citations

Patent
13 Nov 2003
TL;DR: In this paper, a phase shift mask is formed on a non-transparent film and an etch stop layer is applied to expose areas of the transparent substrate, after which the mask is removed and the phase shift oxide is polished down to the etch-stop layer.
Abstract: The invention provides a method of forming a phase shift mask and the resulting phase shift mask. The method forms a non-transparent film on a transparent substrate and patterns an etch stop layer on the non-transparent film. The invention patterns the non-transparent film using the etch stop layer to expose areas of the transparent substrate. Next, the invention forms a mask on the non-transparent film to protect selected areas of the transparent substrate and forms a phase shift oxide on exposed areas of the transparent substrate. Subsequently, the mask is removed and the phase shift oxide is polished down to the etch stop layer, after which the etch stop layer is removed.

5 citations

Patent
08 Jul 1993
TL;DR: The phase shift mask has a phase shifting Sn layer formed on a transparent glass substrate (20). The layer is formed by chemical vapour deposition to a thickness equal to a number (one less than the refractive index) of half-wavelengths.
Abstract: The phase shift mask has a phase shifting Sn layer formed on a transparent glass substrate (20). The layer is formed by chemical vapour deposition to a thickness equal to a number (one less than the refractive index) of half-wavelengths. Patterned photoresists are applied before and after 02 ion implantation, leaving regularly spaced light-screening regions (21b) sepd. by ZnO (24) of the same thickness. No additional conductive layer is needed, so that charging under electron beam irradiation is prevented. ADVANTAGE - The mask has a smooth surface with light-screening and phase-shifting layers in the same plane. Mfr. is simplified and cost reduced with an inexpensive metal-oxide phase-shift layer.

5 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20219
202017
201913
201824
201730
201632