Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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TL;DR: In this article, the authors investigated the process latitude and resolution limit of printing contact windows using a high numerical aperture KrF stepper and attenuated phase shift mask (APSM), and showed that both positive and negative resists can be used depending on the size of the window on the mask.
Abstract: We have investigated the process latitude and resolution limit of printing contact windows using a high numerical aperture KrF stepper and attenuated phase shift mask (APSM). We show that both positive and negative resists can be used depending on the size of the window on the mask. The advantages and disadvantages of using the positive and negative resists are presented. A combination of APSM and focus drilling are shown to extend the focus latitude of subwavelength window printing.
5 citations
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19 Aug 1994
TL;DR: In this article, the phase shift mask has light shielding regions 13 and first light transmission parts 10 and second light transmission part 12 formed between both 10 and 13, where the light transmittance of the second-light transmission parts 12 is as small as not to photosensitize the photosensitive compsn. to be exposed.
Abstract: PURPOSE:To provide the phase shift exposure technique which solves problems, such as transmission defects, by eliminating the drawbacks of the respective phase shift exposure techniques of an auxiliary pattern system, edge stressing system and halftone system, improving accuracy control in plotting and improving line width controllability. CONSTITUTION:This phase shift mask has light shielding regions 13 and first light transmission parts 10 and second light transmission parts 12 formed between both 10 and 13. The light transmittance of the second light transmission parts 12 is larger than 0 and is as small as not to photosensitize the photosensitive compsn. to be exposed. In addition, the phase shift parts are so formed that the phase of the second light transmission parts 12 is varied from the phase of the first light transmission parts 10. Third parts are formed, at need, in a part of the second light transmission parts 12. This exposure method consists in using such phase shift mask.
5 citations
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23 Jul 2003
TL;DR: In this paper, an illumination system is used to illuminate a phase shift mask, which converts a light beam from the illumination system into light beam that has a light intensity distribution of an inverse peak pattern having a minimum intensity in an area corresponding to the phase shift portion of the mask.
Abstract: The present invention is directed to a crystallization apparatus including an illumination system to illuminate a phase shift mask, which converts a light beam from the illumination system into a light beam that has a light intensity distribution of an inverse peak pattern having a minimum intensity in an area corresponding to a phase shift portion of the phase shift mask. The crystallization apparatus further includes an optical member to form on a predetermined plane a light intensity distribution of a concave pattern, which has a light intensity that is minimum in an area corresponding to the phase shift portion and increases toward the circumference of that area based on the light from the illumination system, and an image-forming optical system to set a surface of the polycrystalline semiconductor film or the amorphous semiconductor film or its conjugate plane and the predetermined plane to an optical conjugate relationship.
5 citations
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26 Jul 1999TL;DR: In this article, an extension of optical proximity correction (OPC) for conventional chromium-on-glass mask printing, to alternating phase shift masks (altPSM), is described.
Abstract: The paper describes the extension of optical proximity correction (OPC), which is well established for conventional chromium-on-glass mask printing, to alternating phase shift masks (altPSM). Aerial image simulation of various situations of light-field and dark-field altPSM shows that the size of the phase shifter has a great impact on the printed critical dimension (CD). Especially layouts containing non-symmetric phase shifters or shifter sizes comparable to the nominal CD do not print on target. The application of optical proximity correction to the chromium structures between the phase shifters is capable to compensate for such effects. We demonstrate the added value of OPC using a simulation-based software tool for altPSM.
5 citations
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06 Dec 2010
TL;DR: In this article, a method for fabricating a phase shift mask in extrea ultra-violet lithography is provided, which improves optical density of a frame region by forming a reflection reduction part on an absorption layer pattern.
Abstract: PURPOSE: A method for fabricating a phase shift mask in extrea ultra-violet lithography is provided to improve optical density of a frame region by forming a reflection reduction part on an absorption layer pattern of a frame region. CONSTITUTION: A method for fabricating a phase shift mask in extrea ultra-violet lithography includes the steps of: forming a reflective layer for extreme ultraviolet radiation on a substrate including main chip regions(210) and frame region(220); forming a phase shifter layer pattern on the reflective layer so that the reflective layer is selectively exposed; and forming a reflectance reduction part(360) blocking extrea ultra-violet lithography on the phase shifter layer pattern.
5 citations