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Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.


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Patent
26 May 2000
TL;DR: In this article, the phase contrast of a phase shift mask is adjusted by etching the mask with an etching solution comprising an aqueous solution of a strong alkali such as sodium hydroxide or potassium hyroxide.
Abstract: PROBLEM TO BE SOLVED: To provide a method for accurately adjusting the phase contrast of a phase shift mask by appropriately selecting materials used for the phase shift mask (a transparent substrate and a phase shifter film) and an etching solution. SOLUTION: The phase contrast of a phase shift mask 10 in which a transparent substrate 11 and a phase shifter film 12 comprise the combination of synthetic quartz glass and the oxide or oxynitride of molybdenum silicide is adjusted by etching the mask 10 with an etching solution comprising an aqueous solution of a strong alkali such as sodium hydroxide or potassium hydroxide. COPYRIGHT: (C)2001,JPO

5 citations

Proceedings ArticleDOI
07 Dec 1994
TL;DR: In this paper, a phase shift mask consisting of an array of chrome and chromeless phase etched gratings was fabricated at AT&T Bell Labs using e-beam techniques and measured using the two theta scatterometer located at the University of New Mexico.
Abstract: Scatterometry is presented as an optical metrology technique potentially capable of determining the critical parameters of a phase etched diffraction grating test structure (sidewall profile, etch depth, and linewidth). The technique is noncontact, rapid and nondestructive. The test grating structure is illuminated by a laser beam and the intensities in the different diffracted orders are measured as the angle of incidence of the laser beam is varied over a certain range. A phase shift mask consisting of an array of chrome and chromeless phase etched gratings was fabricated at AT&T Bell Labs using e-beam techniques. The grating linewidths varied from nominal 0.5 micrometers to 5.0 micrometers , while the etch depths varied from a nominal 190 nm to 400 nm depths. Both the chrome and the quartz gratings were measured, although only data for the quartz gratings is presented here. The measurements of the diffracted orders were made using the two theta scatterometer located at the University of New Mexico. The shape of the diffraction curves obtained in this manner has been shown to be sensitive to the grating structure parameters (sidewall profile, etch depth, linewidth, etc.). An estimate of the quarts phase etched structure parameters was obtained through a combination of rigorous coupled wave theory (CWT) and minimum mean square error (MMSE) analysis. Additionally, each grating was measured using an AFM located at AT&T. Comparison of the scatterometer and AFM measurements are presented along with their absolute differences. Finally, the long term and short term repeatabilities of the scatterometer measurements are shown to be excellent.

5 citations

Patent
17 Feb 2003
TL;DR: In this paper, a DC magnetron sputtering device for manufacturing a halftone phase shift mask blank was proposed, in which the target surface is placed facing down against the direction of gravity, a full erosion cathode is used, the corner 5a of the end of the target and the corner of an earth shield are rounded off (corner rounding).
Abstract: PROBLEM TO BE SOLVED: To provide a device, process, etc., for manufacturing a phase shift mask blank wherein the total number of particles and pinholes with diameters larger than about half the exposure wavelength of a translucent film is 0.1/cm 2 . SOLUTION: In a DC magnetron sputtering device for manufacturing a halftone phase shift mask blank, for example, the target surface is placed facing down against the direction of gravity, a full erosion cathode is used, the corner 5a of the end of the target and the corner of an earth shield are rounded off (corner rounding), the end of the target 5b, an exposed backing plate surface 4b and the surface of the earth shield 12 are roughened, and the earth shield 12 is placed above (on the backing plate side) the target surface d. COPYRIGHT: (C)2003,JPO

5 citations

Proceedings ArticleDOI
24 Dec 2002
TL;DR: The feasibility of CPL including phase grating and hybrid CPL is tested and the optical performance between CPL and PEPSM for 100nm node SRAM gate is compared.
Abstract: Chrome Less phase lithography (CPL) may be the crucial technology to print 100nm node and below. CPL can apply to various design layers without causing phase conflicts, while phase edge phase shift mask (PEPSM) is beneficial for specific pattern configurations and pitches. Therefore, we tested the feasibility of CPL including phase grating and hybrid CPL. And we tested the two types of CPL such as mesa and trench structures to decide the proper shifter forming method. We evaluated pattern fidelity of CPL using simulation, aerial image measurement system (AIMS) and wafer printing. Finally, we will compare the optical performance between CPL and PEPSM for 100nm node SRAM gate.

5 citations

Proceedings ArticleDOI
04 May 2006
TL;DR: In this paper, the concept of Effectively Equivalent Mask Patterns (EEMP) method was proposed to obtain approximated optical images which include mask topography effects, and two approximation methods were introduced and evaluated.
Abstract: Mask topography effects arise important components of optical image formation at 45nm node and beyond for attenuated Phase Shift Mask (attPSM). Since calculation of mask topography effects based on rigorous model is very costly, it is unrealistic for Optical Proximity Correction (OPC) and lithography design. This paper investigates an approximation model that takes mask topography effects into consideration. We propose the concept of Effectively Equivalent Mask Patterns (EEMP) method to obtain approximated optical images which include mask topography effects. We found mask space width is the main factor among mask topography effects. For realizing the EEMP method, we introduce and evaluate two approximation methods for mask topography effects. One is the simple space model and the other is the Proximity Mask Opening (PMO) model, which is a model of waveguide effects. EEMP with PMO model can improve prediction accuracy at both 1-dimensional and 2-dimensional patterns and increase in run time for EEMP with PMO model is 40 percent of that required for thin film simulations.

5 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20219
202017
201913
201824
201730
201632