Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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TL;DR: In this article, a combined simulation of the photomask patterning process and projection optical lithography has been used to simulate the optical proximity effect in alternating phase shift masks on wafer level imaging.
5 citations
Patent•
25 Apr 2013
TL;DR: In this paper, a phase-shift mask is presented, which is a large-sized photomask that enables the exposure of a large area to light and has a constitution suitable for the formation of a fine pattern.
Abstract: Provided are: a phase-shift mask which is a large-sized photomask that enables the exposure of a large-sized area to light and has a constitution suitable for the formation of a fine pattern; and a method for producing the phase-shift mask. A large-sized phase-shift mask is produced, which can be produced easily and enables the transfer of a fine pattern. The large-sized phase-shift mask has such a constitution that a light-shielding film contains chromium or a chromium compound as the main component, a phase-shift film contains chromium oxide or oxidized chromium nitride as the main component, and the phase-shift film is laminated on the light-shielding film in the light-shielding area. The reflectance of the light-shielding area can be reduced by employing such a constitution that an anti-reflective film comprising a chromium compound is additionally provided between the light-shielding film and the phase-shift film.
5 citations
Patent•
TSMC1
TL;DR: In this article, a method for repairing an attenuated phase shift mask is described, where a mask substrate is first coated with a predetermined shift layer material, a mask pattern layer, and an energy beam resist layer sequentially.
Abstract: A method is disclosed for repairing an attenuated phase shift mask The mask initially has a mask substrate coated with a predetermined shift layer material, a mask pattern layer, and an energy beam resist layer sequentially After forming a predetermined mask pattern in the mask pattern layer through an energy beam resist layer, the mask is inspected for detecting at least one missing pattern in the mask pattern layer The predetermined mask pattern is repaired in a predetermined defect area for correcting the missing pattern After the missing pattern is reformed The predetermined mask pattern is transferred in the shift layer material
5 citations
Patent•
20 Oct 2006
TL;DR: In this paper, a method for manufacturing a halftone phase shift mask by which no correction scum of a residual defect is left when the residual defect of a Halftone Phase Shift Mask is removed by using an AFM (atomic force microscope) correcting device is provided.
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a halftone phase shift mask by which no correction scum of a residual defect is left when the residual defect of a halftone phase shift mask is removed by using an AFM (atomic force microscope) correcting device. SOLUTION: The method for manufacturing a halftone phase shift mask includes steps of: forming a semitransparent phase shift layer 21 and a chromium layer 31 on a transparent substrate 11; patterning the chromium layer 21 to form a chromium pattern 31a; etching the semitransparent phase shift layer 21 by using the chromium pattern 31a as a mask to form a mask pattern 30a; inspecting the pattern by an appearance inspection machine to detect a residual defect; correcting the residual defect by using an AFM correcting machine; removing correction scum generated during defect correction by alkali cleaning; and removing the chromium pattern 31a. COPYRIGHT: (C)2008,JPO&INPIT
5 citations
Patent•
18 Jun 1999
TL;DR: In this paper, a shifter residue defect on a phase shift mask is detected by counting the interference fringes or by other methods to control the ultrashort pulse UV laser light at 200 to 360 nm wavelength and having 10 psec to 50 fsec pulse width.
Abstract: PROBLEM TO BE SOLVED: To make easily correctable shifter residue defects on a phase shift mask in a short time by using a UV pulse laser light to remove the shifter residue defects on a phase shift mask. SOLUTION: A ultrashort pulse UV laser light 11 is reflected by a dichroic mirror 8 and converged through an objective lens 9 to irradiate a shifter residue defect 13 on a phase shift mask 14. The shifter residue defect 13 nonlinearly absorbs the ultrashort pulse UV laser light 11 and vaporizes to be removed by the laser ablation effect. A phase difference detecting part 10 is also disposed in order to maintain high correction accuracy, and the image showing changes in the phase in the processed part is monitored by the phase difference detecting part 10. Moreover, the completion of the process is detected by counting the interference fringes or by other methods to control the ultrashort pulse UV laser light 11. As for the ultrashort pulse UV laser light 11, laser light at 200 to 360 nm wavelength and having 10 psec to 50 fsec pulse width is selected.
5 citations