Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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Patent•
26 Dec 2002
TL;DR: A halftone phase shift mask as discussed by the authors consists of a transparent substrate, a light shielding film formed on the transparent film for shielding exposure light, and having a first opening for shifting the phase of the exposure light.
Abstract: A halftone phase shift mask comprises a transparent substrate, a light shielding film formed on the transparent film for shielding exposure light, and having a first opening, and a halftone phase shift film formed in the first opening on the transparent substrate for shifting the phase of the exposure light, and having a second opening which defines an exposed region.
4 citations
Patent•
27 Sep 1996
TL;DR: In this article, a phase shift mask with a shifter pattern is manufactured, which shifts a phase against passing light through a transparent substrate and a shade film pattern on the substrate.
Abstract: PURPOSE: To provide a manufacture of a phase shift mask having an excellent exposure performance by which an etching amount can accurately be controlled through monitoring the etching amount, and the thickness of a shifter can be controlled so as to become a required value. CONSTITUTION: In a manufacture of a phase shift mask having a shifter pattern which shifts a phase against passing light through a transparent substrate 11 and a shade film pattern on the substrate 11, the manufacture is composed of a forming process in which the shift pattern is formed by selectively etching the exposure area 12 of the board 11 using a shade film and a mask, and at the same time a monitor area 13 besides the exposure area 12 is selectively etched using a diffraction grating mask so as to form a diffraction grating pattern, a measurement process in which the light is incident on the monitor area 13 at such an angle as conducting total reflection so as to measure the intensity of the reflected light, and a stopping process in which etching is stopped at that point when the measured intensity of the reflected light reaches a required value.
4 citations
Patent•
05 Sep 2003
TL;DR: In this paper, the authors proposed a method to reduce the work load spent for designing a Levenson phase shift mask of a substrate engraving type and reduce the working time, which includes the steps of setting exposure conditions, designing a layout pattern, determining the maximum allowable error Dmax on a transfer pattern, predicting the radius r of curvature of a groove bottom when anisotropic etching in step S10 is performed, determining J types of three-dimensional structures of grooves having grooves according to the radius of curvatures r and having different undercut quantities,
Abstract: PROBLEM TO BE SOLVED: To reduce work load spent for designing a Levenson phase shift mask of a substrate engraving type and to reduce the working time. SOLUTION: The method includes the steps of: (S1) setting exposure conditions; (S2) designing a layout pattern; (S3) determining the maximum allowable error Dmax on a transfer pattern; (S4) predicting the radius r of curvature of a groove bottom when anisotropic etching in step S10 is performed; (S5) determining J types of three-dimensional structures of grooves having grooves according to the radius of curvature r and having different undercut quantities; (S6) carrying out light transmission simulation to obtain dimensional difference; (S7) determining the undercut quantity as the minimum Umin which generates the dimensional difference corresponding to the maximum allowable error Dmax; (S8) determining the optimum value Ucbest; and (S9 to S11) subjecting a substrate having a light shielding layer to anisotropic etching and isotropic etching to manufacture a mask. COPYRIGHT: (C)2005,JPO&NCIPI
4 citations
22 Aug 2001
TL;DR: In this paper, a new approach to overcome the difficulties is studied with acetal type PR and attenuated phase shift mask (att. PSM) to control the aerial image intensity between contact holes, and the CD variation induced by bake process was drastically decreased when compared to Cr mask.
Abstract: Bake process of photo resist above glass transition temperature (Tg) increases its fluidity and shrinks contact holes patterned on the wafer. This process enables us to define sub-0.2 micrometers contact hole pattern with KrF, which is one of major issues of sub-0.15 micrometers device technology. However, the amount of PR flow depends on the contact hole size, pattern density and environment, which makes it difficult to control the fine critical dimension (CD) variation. In this paper, new approach to overcome the difficulties is studied with acetal type PR and attenuated phase shift mask (att. PSM). It is found that the change of chemical bonding in PR by light exposure decreases the resist flow sensitivity, which makes us solve the problems. The att. PSM enables us to control the aerial image intensity between contact holes, and the CD variation induced by bake process was drastically decreased when it is compared to Cr mask. The layout optimization by simulation for aerial image control in bulk region, and the resist flow process combined with att. PSM allows us to control the CD variation less than 20 nm for the sub-0.15 micrometers devices fabrication.
4 citations
05 Jul 2000
TL;DR: The attenuated phase shift mask has been sued to delineate 022 micrometers contact hole structures for 018micrometers technology using a scanner with a high NA of 068, this is equivalent to a k 1 value of 060 as discussed by the authors.
Abstract: The attenuated phase shift mask has been sued to delineate 022 micrometers contact hole structures for 018micrometers technology Using a scanner with a high NA of 068, this is equivalent to a k 1 value of 060 As device shrinks down to 013 micrometers technology, 016 micrometers contact holes are to be printed with sufficient process latitudes Using the existing high NA scanner, the k 1 value is a low 044 Simulations were done using PROLITH/3D software, and the results show better performance for isolated holes Higher mask transmissions are required to improve the aerial image of the dense holes Experimentation was conducted to print 016micrometers contact holes using moderate and low (sigma) settings 6 percent APSM was used with 016micrometers , 018micrometers and 020micrometers contact hole patterns biased by 004micrometers , 006micrometers and 008micrometers Impact of these parameters on mask error enhancement factor were discussed
4 citations