Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

0.12 µm Optical Lithography Performances Using an Alternating Deep UV Phase Shift Mask

Abstract: Manufacturing the next generation of devices will demand lithographic capability in the sub-0.18 µm range. The phase shift mask (PSM) is a key emerging technology which is thought to extend 248 nm optical lithography. Using the Levenson PSM technique allows us to improve resolution by as much as 50% at gate level. This paper describes the lithographic performances of the Shipley UV5 photoresist on SiOxNy bottom antireflective coating (BARC), using alternating PSM and an ASM/90 Deep UV stepper. Critical dimension (CD) measurement was done on an OPAL 7830i metrology scanning electron microscope (SEM). Results on sub-0.18 µm design rules are presented as follows. –The first part concerns experimental conditions: masks, process conditions, anti-reflective substrates, etching and metrology are discussed. –The second part concerns lithographic performances: process linearity from 0.12 µm to 0.18 µm, 0.12 µm isolated line process latitudes of 7% energy latitude for 0.8 µm depth of focus (DOF) have been exhibited. Finally we try to evaluate the proximity effect and the ultimate resolution of this technology.

Method and equipment for measuring amount of phase shift for phase shift mask substrate

Abstract: PROBLEM TO BE SOLVED: To accurately and directly measure the amount of phase shift of a phase shifter layer formed on a transparent substrate in a non-contact and non-destructive manner when the phase shifter layer is formed. SOLUTION: In this method for measuring the amount of phase shift for a phase shift mask substrate wherein the phase difference of transmitted light before and after forming of a phase shifter layer on a transparent substrate at the same position of the transparent substrate, a dummy transparent substrate is mounted on a sample stage of an interferometer, on which a transparent substrate is to be mounted, instead of the transparent substrate while the phase shifter layer is formed on the transparent substrate. Phase variation of the transmitted light through the dummy transparent substrate is detected during formation of the layer, and when a phase of light passing through the transparent substrate after the phase shifter layer is formed on the transparent substrate, the mount of varied phase shift is canceled out by compensating the length of one of optical paths of the interferometer by means of an optical-path-length compensating means 11.

Defect correction method for halftone phase shift mask

Abstract: PROBLEM TO BE SOLVED: To provide a defect correction method for a phase shift mask depositing a correction film having an optical characteristic equivalent or close to a semi-transmissive film so as to correct by a comparatively simple method using an FIB(focusing ion beam). SOLUTION: An ion beam is irradiated onto the short defect of a halftone phase shift mask having at least semi-transmissive film pattern on a transparent substrate as feeding film material so as to deposit a correction film comprising the film material or its reaction substance to correct the short defect of the semi-transmissive film pattern so that the defect correction of the halftone phase shift mask is conducted. After previously grasping a relationship (the figure) between light transmittance and phase difference against the thickness of a correction film to be deposited, the substantially same correction film as the semi-transmissive film is deposited based on the relationship. At that time, the diameter of an aperture mounted on a focusing ion beam device and the thickness of the correction film are changed.

Method for correcting residual defect of phase shift mask and device therefor

Abstract: PURPOSE:To correct the residual defects of the phase shifters of a phase shift mask. CONSTITUTION:The device for correcting the mask by utilizing a sputtering effect of a focused ion beam is provided with plural secondary charge particle detectors 8 in order to correct the residual defects of the phase shifters of the phase shift mask. The three-dimensional shapes of the residual defects of the phase shifters are recognized by the outputs of the plural secondary charge particle detectors 8 and a map of ion irradiation quantities meeting the three-dimensional shapes of the defects is formed. Etching is executed in accordance with this map. Then, the surface of the mask after removal of the residual defects is smoothed and this mask is usable as the phase shift mask.

Photomask, in particular alternating phase shift mask, with compensation structure

Abstract: The invention relates to a method for the production of masks, in particular for the production of alternating phase shift masks (1), or of chromeless phase shift masks or phase shift masks structured by quartz etching, respectively, as well as to a mask (1), in particular photomask, for the production of semiconductor devices, comprising at least one product field area (6 a) and a compensation structure (5) positioned outside the product field area (6 a), wherein the compensation structure (5) comprises at least one electroconductive region (8 b) that is electrically connected with the product field area (6 a).