Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Manufacturing method of a phase shift mask, method of forming a resist pattern and manufacturing method of a semiconductor device

Abstract: When a Levenson phase-shift mask is manufactured, the relationship of optical conditions (numerical aperture, partial coherence factor, and others) of an optical system of an exposure device used for exposure and a mask structure (amount of excavation of a substrate, thickness of a phase shifter, or the like) with displacement of a pattern to be transferred by exposure is sought by simulation, and optical conditions and a mask structure that limit displacement of the pattern within a required range are selected, taking manufacturing errors of the mask into consideration. Then the selected optical conditions and mask structure are examined to determine whether they ensure a desired exposure tolerance and a desired focal depth, and this procedure is repeated until an acceptable result is obtained. Once an acceptable result is obtained, the optical conditions and the mask structure are employed to fix the exposure device to the determined optical conditions and actually start fabrication of the mask having the determined mask structure. Thereby, upon exposure using the phase-shift mask, displacement of the transfer pattern is minimized, which results in improvement of the transfer positional accuracy, while ensuring a lithography process tolerance.

Half-tone type phase shift mask and method for fabricating the same

Abstract: There is disclosed a half-tone type phase shift mask comprising a transparent substrate on which a phase shift pattern and a chrome pattern, both provided with a window, are laminated in sequence, said window exposing a predetermined area of said transparent substrate therethrough, and said chrome pattern having a step near the window which is so thick as to permit penetration of only about 5 to 50% of an incident beam of light illuminated on said half-tone type phase shift mask. Such half-tone type phase shift mask is fabricated by: forming a phase shift layer on a transparent substrate; forming a light screen on the phase shift layer; selectively etching the light screen and the phase shift layer in sequence, to form a light screen pattern and a phase shift pattern, both provided with a window exposing a predetermined area of the transparent substrate; and removing the light screen pattern near said window at a predetermined thickness, to form a step near said window. It is capable of preventing the penetration of light at unintended areas, and thus is capable of providing a photosensitive pattern superior in smooth profile.

Method for exposure and aligner

Abstract: PROBLEM TO BE SOLVED: To improve precision in exposure, by suppressing change in optical constant of a phase shifter material of a phase shift mask caused by irradiation of exposure light. SOLUTION: This device has a configuration such that a half tone type phase shift mask 8 where a desired pattern is formed is irradiated with ArF laser beam, and a pattern of the mask 8 is transferred on to a wafer 15. In this case, the mask 8 is set in a mask housing part 20 isolated from the atmosphere. Here, the mask housing part 20 is held in a nitrogen atmosphere containing oxygen, while an oxygen partial pressure to the entire gas pressure is set to 5%.

Method of forming a phase shift mask

Abstract: A method of forming a phase shift mask is disclosed. After providing a substrate with a shifter layer and a Cr layer, a first photoresist layer is formed on the Cr layer. Thereafter, a position of a shifter pattern is defined by using E-beam writing process and then a develop process is performed. After that, a first Cr pattern is formed by using an etching process to etch the Cr layer. After removing the first photoresist layer, the shifter pattern is formed by using an etching process to etch the shifter layer. After forming a second photoresist layer, an exposure process of conventional photolithography is performed by means of a boarder mask to define a position of a second Cr pattern. After performing a develop process, the second Cr pattern is formed by using an etching process to etch the first Cr pattern.

Halftone system phase shift mask and its correcting method and production of semiconductor device

Abstract: PURPOSE:To provide the halftone system phase shift mask with which a defec tive region is selectively and surely coated with a light shielding body, the difference of the transfer pattern shape after mask correction from a desired shape is practicably negligible and the defective region is corrected. CONSTITUTION:The halftone system phase shift mask 1B which has half light shielding regions 12 and light transmission regions 10 and varies in the phase of the light past the half light shielding regions and the phase of the light past the light transparent regions includes the defective regions 14 which varies in phase, amplitude transmittance or both thereof from prescribed values and exists in the half light shielding region 12 adjacent or proximate to the light transmission region 10. In addition, the correction region 16 within the defective region larger than the defective region and a part 10A of the light transmission region adjacent or proximity to the correction region 16 is coated with the light shielding body 30 having the amplitude transmittance at which a resist material is not sensitized.