Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Fine structure measuring device

Abstract: PURPOSE:To enhance measuring accuracy and operability by changing the frequency of a drive signal by adjusting a variable oscillation circuit to change the distance between two beams incident on a fine structure. CONSTITUTION:Two laser beams from an acoustic optical element 12 are allowed to be incident on a beam splitter 15 to be divided into the first luminous flux reflected from the reflecting surface of the beam splitter 5 and the second luminous flux transmitted through the reflecting surface. The first luminous flux is allowed to be incident on a first light detector through a first condensing lens 16 and the first electric signal generated from the light detector 17 is amplified by a first preamplifier 18. The second luminous flux transmitted through a phase shift mask 20 is allowed to be incident on a second light detector 22 through a condensing lens 21 and the second electric signal generated from the second light detector 22 is amplified by a second preamplifier 23. Next, the first and second electric signals are supplied to a phase comparing circuit 24 and the phase difference between both signals is detected and this phase difference signal is outputted to an output terminal 25. The phase difference signal shows the phase difference between the light transmitted through the part provided with a phase shifter of the phase shift mask 20 being an object to be inspected and the light transmitted through the part not provided with the phase shifter of the mask 20.

Production of phase shift mask

Abstract: PROBLEM TO BE SOLVED: To provide a producing method of a halftone phase shift mask, having a semitransparent part for light excellent in film characteristics such as acid resistance, light resistance, conductivity, refractive index (film thickness), transmittance, phase shift amount and etching selectivity. SOLUTION: The producing method of a phase shift mask includes a process for forming a semitransmitting thin film 3a for light as a thin film, which constitutes a semitransparent part on a transparent substrate 1 and a process for forming a resist pattern on the semitransparent thin film 3a. The semitransparent thin film 3a consists of a material essentially comprising nitrogen, metal and silicon as the main structural elements and contains 34 to 60 at.% silicon. The resist pattern formed on the thin film 3a is used as a mask for etching the semitransparent thin film 3a to obtain the desired pattern of the thin film, and then the thin film is subjected to sulfuric acid cleaning.

Phase shift mask blank, phase shift mask and method for depositing phase shift film

Abstract: PROBLEM TO BE SOLVED: To decrease particles in ≥02 μm size as compared to a conventional phase shift film having a two-layer film structure SOLUTION: In the phase shift mask blank having a phase shift film comprising two layers of different compositions on a transparent substrate, the elements constituting the film of each layer are Si, N and O, and the phase shift film has a gradient film part where the composition in one film changes to the composition of the other film on the interface between the two layers COPYRIGHT: (C)2005,JPO&NCIPI

Phase shift mask and its production

Abstract: PROBLEM TO BE SOLVED: To correct an optical proximity effect with high accuracy and to form a semiconductor pattern with high resolution by variably setting the light transmittance of a phase shifter according to the density of a pattern to be exposed. SOLUTION: A resist 2 is applied on a transparent substrate 1 comprising quartz or the like having thickness 6d and is exposed through a mask to form a resist pattern. The obtd. pattern is used as a mask for anisotropically etching to form grooves having depth 5d in the substrate 1. An attenuated phase shifter 3 is deposited in the formed grooves having the depth 5d by a CVD method, etc. The upper face of the substrate is flattened by an etch-back method or the like to expose the substrate 1. In the same process, grooves having depth 3d and depth (d) are formed and an attenuated phase shifter 3 is deposited in each of the grooves. The grooves are preferably formed in such a manner that the depth of the grooves is (d) in the thinnest part and the depth is set to (2n-1)d (wherein n is an integer >=1) according to the density of a pattern to be exposed.

Phase shift mask and method for manufacturing phase shift mask

Abstract: PROBLEM TO BE SOLVED: To improve resist resolution of a photomask while forming a finer light shielding pattern of the photomask and to prevent peeling of a light shielding pattern from the photomask to improve durability of the photomask. SOLUTION: The phase shift mask has an engraved groove 200 for a phase shifter, wherein a light shielding pattern comprises a translucent film 203 applied on one principal surface of a transparent mask substrate and a light shielding film 202 applied on the translucent film and having a smaller width than that of the translucent film. The position of the light shielding film 202 in the light shielding pattern is deviated to the engraved groove nearest to the light shielding pattern. The transmittance of the translucent film for exposure light is lower than the transmittance of the transparent mask substrate for exposure light, and the transmittance of the light shielding film for exposure light is lower than the transmittance of the translucent film for exposure light. COPYRIGHT: (C)2006,JPO&NCIPI