Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Method for selective PSM with assist OPC

Abstract: A phase shift mask for photolithography used in fabricating integrated circuits is disclosed. The mask comprises a transparent plate and a first opaque film formed on said transparent plate, which has a first pattern defining a main feature region. The first pattern is then imaged onto a photoresist layer coated on a wafer for the integrated circuits. The present invention further comprises at least one phase shift region formed on said transparent plate to correspond to an active region of the wafer, in which the phase shift region is used to improve optical scattering effect of the first pattern through the active region while performing the photolithography. Moreover, the present invention comprises at least one second opaque film formed on said transparent plate to correspond to a non-active region of the wafer, in which each has at least one second pattern used to improve optical scattering effect of the first pattern through the non-active region while performing the photolithography. The second pattern is located alongside and separated from the first pattern of the opaque film, and wherein the second pattern is then imaged onto the wafer with the phase shift region and the first pattern.

Pattern defect correcting method for phase shift mask

Abstract: PURPOSE:To make exact correction by implanting ions by using a convergent ion beam to the pattern defect part of a phase shift mask in such a manner that the phase and transmittance of the light passing this defect part attain the phase and transmittance similar to these of the light passing normal pattern parts. CONSTITUTION:A substrate 1 exposed under the defect region 3 is etched by irradiating this substrate with the convergent ion beam 4 shown by arrow 4 under scanning as shown by arrow 5. At this time, an ion implanted layer 7 is formed near the extreme surface of the substrate 1 simultaneously with etching. The thickness of the ion implanted layer 7 depends on the energy of the ion beam to be cast and the light transmittance, reflectivity and refractive index of the implanted layer 7 are determined by the quantity of the ions to be implanted. The final quantity of the ion implantation is so determined that the light transmittance of the implanted layer 7 attains the value approximately equal to the light transmittance of an attenuation type phase shift film 2. The etching depth of the substrate 1 is set at odd times of pi (180 deg.) of the phase difference of the light passing the non-etched region and the etched region.

Chromium-free phase-shift mask and equipment using said mask

Abstract: A phase shift masking without Cr in a structure of tilted phase shift layer forms a line width control zone between light-transmission zone and phase shift zone. The tiled phase shift layer becomes thinner steadily from the border or phase shift to light-transmission zone to make the incident ray of the incident line width control zone distructive interference to weaken the incident ray intensityso as to control the line width of unexposed zone freely not restricted by the definite incident ray, suitable for the operation of lines of equal values.

Crystallizing device, crystallizing method and used phase-shift mask and filter

Abstract: A crystallization apparatus includes an image forming optical system which has an image side numerical aperture set to a value required to generate a light intensity distribution with an inverse peak pattern and sets an amorphous semiconductor film and a phase shift mask to an optically conjugate relationship. The phase shift mask has a boundary area which extends along a first axial line, and a first area and a second area which are arranged on both sides of the boundary area have a predetermined phase difference therebetween. The boundary area has a phase distribution which varies from a phase of the first area to a phase of the second area.