Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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Patent•
28 Mar 1997
TL;DR: In this article, the phase shifter layers of the parts corresponding to the apertures in a part of light shielding patterns 2 are dry-etched and thereafter, the phase shift layers are sideetched by wet etching.
Abstract: PROBLEM TO BE SOLVED: To provide a process for producing a phase shift photomask having high accuracy and high quality capable of exactly matching phase difference with 180 deg. while directly reading this difference and eliminating the need for examining the wet etching liquid resistance of a resist. SOLUTION: The phase shifter layers of the parts corresponding to the apertures in a part of light shielding patterns 2 are dry-etched (Fig, (j)) and thereafter, the phase shift layers 4 of the parts corresponding to all the apertures of the light shielding patterns 2 are sideetched by wet etching (Fig. (1)), in the process for producing the phase shift mask constituted by forming, successively from a substrate side, an etching stopper layer 5, the phase shift patterns 4 and the light shielding patterns 2 in this order on a transparent substrate 1.
4 citations
Patent•
29 Oct 1999
TL;DR: In this paper, a half-tone phase shaft mask is manufactured without adjusting the position to a underlying pattern in an exposure step of an EB resist, where a half tone film 11 is formed on a quartz substrate 10 and a light shielding film 12 made from chromium oxide was formed on it (film formation step).
Abstract: PROBLEM TO BE SOLVED: To provide a method which manufactures a half tone type phase shaft mask without adjusting the position to a underlying pattern in an exposure step of an EB resist. SOLUTION: A half tone film 11 is formed on a quartz substrate 10 and a light shielding film 12 made from chromium oxide is formed on it (film formation step). The film 12 is coated with an electron beam resist 13 as a mask layer (mask layer formation step). Electron beam plotting is performed, development is performed and an opening is formed (opening for mask formation step). The cross-section shape of the opening formed on the resist 13 becomes a reverse taper shape in which erosion on a back side is larger than an exposed surface side. Continuously, the film 12 is wet-etched with the resist 13 as a mask (1st etching step) and the film 11 is dry-etched (2nd etching step). A two- step hole is formed by peeling the resist 13.
4 citations
Patent•
25 Jul 2003
TL;DR: In this paper, the side wall angle θ formed by the fabricating side walls of the light-transmitting sections forming the phase differences between the light and the surfaces of the substrate is adopted as the specifications for the inspection of the phase shift mask.
Abstract: PROBLEM TO BE SOLVED: To ameliorate the deviation in position and the degradation in contrast in exposure patterns of a Levenson type phase shift mask SOLUTION: In the method of inspecting a phase shift mask for high- resolution exposure in which light-transmitting sections a1 and a2 are formed on both sides of fine line width of fine patterns on a light-transmitting substrate 1 and in which the resolution is enhanced by the interference effects by the phase differences of the light transmitting the light-transmitting sections, the side wall angle θ formed by the fabricating side walls of the light-transmitting sections forming the phase differences of the light and the surfaces of the light- transmitting substrate is adopted as the specifications for the inspection of the phase shift mask, thereby, the conduction of the inspection of the undesirable phase shift mask in the process of making the phase shift mask is made possible COPYRIGHT: (C)2003,JPO
4 citations
Patent•
22 Jul 2003
TL;DR: The phase shift mask as discussed by the authors is a simple mask that requires only a single write step if employed with the back-side exposure technique, which is well known in the mask-making industry.
Abstract: A phase shift mask which includes an etched quartz region that provides a 180 degree phase shift, and an attenuated film which provides a 0 (or 360) degree phase shift. The phase shift mask provides performance comparable to CPL, while at the same time, avoiding the problems and manufacturability issues associated with EDA. The phase shift mask has better contrast than CPL, and a process window that is comparable to both CPL and alternating phase shift masks. The phase shift mask that does not require a second critical write, as is the case with CPL, does not need a second mask to eliminate unwanted patterns resulting from phase edges, and does not need a complicated EDA solution (like CPL). Finally, the phase shift mask is simple to manufacture, requiring only a single write step if employed with the back-side exposure technique which is well known in the mask-making industry.
4 citations
Patent•
20 Jan 2005
TL;DR: In this article, a phase shift mask is used to prevent the occurrence of concave defect in a light transmitting part in a main pattern or in an auxiliary pattern by forming the main pattern and the auxiliary pattern in separated processes.
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a phase shift mask for preventing the occurrence of a concave defect in a light transmitting part in the main pattern or in an auxiliary pattern by forming the main pattern and the auxiliary pattern in separated processes, to provide a phase shift mask, and to provide a method for transferring a pattern by using the phase shift mask. SOLUTION: First, a main pattern 51a comprising an engraved transparent substrate 11 is formed in a phase shift mask blank 10 having a halftone phase shift film 21 consisting of MoSi or the like and a light shielding film 31 comprising a chromium film on a transparent substrate 11 such as a quartz substrate. Further, an auxiliary pattern 61 is formed, a halftone phase shift region 21a and a light shielding region 31 are formed to obtain the phase shift mask 100. COPYRIGHT: (C)2005,JPO&NCIPI
4 citations