Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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12 May 2005
TL;DR: In this paper, the effect of mask size on the resolution of low-k1 lithography was analyzed and a rigorous simulation was performed in consideration of the above conditions. But the authors did not take into account the influence of mask pattern size on illumination.
Abstract: In recent low-k1 lithography, the size of a mask pattern is becoming close to wavelength of the light source. The light intensity through the mask pattern is depending on polarization. TM polarization light is higher transmission than TE polarization light for a MoSi mask. This effect influences not only the zeroth-order light but the first-order light. On the other hand, TE polarization imaging makes higher contrast than TM polarization in two beam interference. Effects of
polarization to resolution are not simple. Since an attenuated phase shift mask is used in order to obtain high contrast, it is necessary to take into consideration the influence of that. It is also taken into consideration that illumination light is not perpendicular incidence but oblique incidence for an ArF hyper-NA tool. We will perform a rigorous simulation in consideration of the above conditions. Hereby influence of the to the utmost resolution will be clarified by the rigorous simulation.
4 citations
01 Jan 2001
TL;DR: In this paper, a defect reduction of APSM reticles is addressed with multiple-option strategy to achieve high manufacturing yield, including isotropic etch and aperture sizing, where positional line shift can be reduced to within 5nm of the final CD target.
Abstract: Alternating Phase Shift Mask (APSM) reticles is critical to achieve sub 0.1 um poly gate lithography. Intrinsic APSM image inbalance can be resolved with various methods such as isotropic etch and aperture sizing, where positional line-shift can be reduced to within 5nm of final CD target. Defect reduction of APSM fabrication is addressed with multiple-option strategy to achieve high manufacturing yield. After Develop Inspection (ADI) capability was demonstrated with partial and complete missing 180 deg apertures, detected at post-develop with correlation to Qz defect after dry etch. Feasibility of APSM inspection and repair was demonstrated with existing toolsets and critical gap versus APSM defect specification remained to be bridged.
4 citations
Patent•
03 Jan 2008
TL;DR: In this paper, an exposure mask and a lithography method using the same are provided to prevent generation of patterns in a defect induction region by using a die open mark in the lithography process for an edge field region of a wafer in field units.
Abstract: An exposure mask and a lithography method using the same are provided to prevent generation of patterns in a defect induction region by using a die open mark in a lithography process for an edge field region of a wafer in field units. An edge field mask(130) is formed to expose an edge region of a wafer(100). The edge field mask corresponding to a defect induction region of a wafer edge part includes a die open mark(140). The die open mark is formed with one of a binary mask, a phase shift mask, and a combination mask of the binary mask and the phase shift mask. The edge field mask includes only the die open mark. The edge field mask is formed by coupling the die open mark with a main field mask(120). A lithography method includes a first exposure process for exposing the entire surface of the wafer in field units, a second exposure process for exposing the defect induction region in die units in the edge field region, and a developing process for developing the entire surface of the wafer.
4 citations
IBM1
TL;DR: A DUV (248 nm) attenuated phase shift mask (APSM) using a hydrogenated amorphous carbon film was fabricated and its lithographic performance was evaluated against a binary mask as mentioned in this paper.
4 citations
Patent•
29 Jan 2015
TL;DR: In this paper, a phase shift mask blank with three kinds of layers, namely, a transparent substrate, a semitransparent layer, an intermediate layer and a light blocking layer, is presented.
Abstract: This mask blank has: a transparent substrate; a semitransparent layer formed on the transparent substrate; an intermediate layer formed on the semitransparent layer; and a light blocking layer formed on the intermediate layer. The light blocking layer is configured from a single metal material not containing a transition metal, the film thickness of the light blocking layer is equal to or less than 40 nm, and the optical concentration of a laminated body with respect to exposure light is equal to or higher than a value at which the laminated body functions as a light blocking region, said laminated body having laminated therein three kinds of layers, i.e., the semitransparent layer, intermediate layer, and light blocking layer. Consequently, the present invention provides the mask blank to be used for the purpose of manufacturing a half tone-type phase shift mask, which has high light blocking performance even if the thickness of a light blocking pattern film is reduced, and which also has a reduced EMF bias value, and excellent pattern workability, light resistance and chemical resistance, said phase shift mask being suitable for a lithography technology having a half pitch of 40 nm or more on a wafer.
4 citations