Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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16 Dec 2015
TL;DR: In this paper, a mask blank has a structure in which, on a transparent substrate, a phase shift film, a light shielding film, and a hard mask film are laminated in the stated order from the transparent substrate side.
Abstract: A mask blank having a structure in which, on a transparent substrate, a phase shift film, a light shielding film, and a hard mask film are laminated in the stated order from the transparent substrate side. The phase shift film is formed of a material containing silicon, the hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure in which the following three layers: a lower layer, an intermediate layer, and an upper layer are laminated, the upper layer having a highest content of chromium in the light shielding film, the intermediate layer having a lowest content of chromium in the light shielding film, and containing at least one metallic element selected from indium, tin, and molybdenum.
3 citations
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30 Dec 1999
TL;DR: In this paper, a bi-layer structure consisting of two films having different optical constants, that is absorptive film (AF) and transmissive film (TF), was developed for attenuated phase shift mask.
Abstract: We have reported that Zirconium Silicon Oxide (ZrSiO) film is one of the most promising materials for attenuated phase shift mask (att. PSM) for ArF excimer laser lithography. In this paper, we report on practical mask characteristics of ZrSiO att.PSM through its fabrication process. Optical constants (refractive index n/extinction coefficient k) of ZrSiO sputtered films vary continuously according to Ar/O2 flow ratios. A reasonable solution to improve spectroscopic property including transmittance at inspection wavelength can be obtained by a bi-layer structure, consisting of two films having different optical constants, that is absorptive film (AF) and transmissive film (TF). By selecting a pair of appropriate optical constants and adjusting thickness of each layer, we developed the bi-layer structure suitable for optical and other required properties. ZrSiO films are etched by chlorine-based gases, especially AF (bottom layer) dry etching using BCl3 gas has high selectivity to quartz substrate. By optimizing dry etching conditions, cross sectional profile has been attained to over 80 deg, moreover no remarkable residues and edge roughness can be seen. These masks are confirmed to have sufficient tolerance to conventional cleaning process by monitoring the change of transmittance or reflectance curve. Consequently, both transmittance and phase shift through fabrication process approached the required specification, plus or minus 0.3% and plus or minus 2 deg, respectively. Inspection or measurement tools for conventional masks are also applicable. In addition, ZrSiO att.PSM is proved to have sufficient durability for ArF excimer laser irradiation.
3 citations
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25 Jun 1993
TL;DR: In this paper, an etching stopping layer 2 for stopping the etching of a phase shift layer 3 at the time of etching the layer 3 is made of a material contg. Al 2 O 3 and SnO 2.
Abstract: PURPOSE: To produce a phase shift mask blank with an etching stopping layer having acid resistance as well as basic properties as an etching stopping layer and to produce a phase shift mask. CONSTITUTION: An etching stopping layer 2 for stopping the etching of a phase shift layer 3 at the time of etching the layer 3 is made of a material contg. Al 2 O 3 and SnO 2 and the etching stopping layer 2 is heat-treated to produce the objective phase shift mask blank with an etching stopping layer 2 having superior acid resistance as well as basic properties as an etching stopping layer. The objective phase shift mask is produced using the phase shift mask blank. COPYRIGHT: (C)1995,JPO
3 citations
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TL;DR: In this article, Reita et al. outlined the fabrication of advanced masks and some specific aspects will be discussed and showed that the increasing design complexity and the complexification of the optical lithographic process generate major issues on all aspects of the fabrication and control of such masks.
3 citations
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23 Jan 1998
TL;DR: In this paper, a phase shift mask of a structure obtd by sticking plural mask substrates to each other with high accuracy and high quality at a good yield is presented. But the phase shift masks are not suitable for high quality applications.
Abstract: PROBLEM TO BE SOLVED: To produce a phase shift mask having a structure obtd by sticking plural mask substrates to each other with high accuracy and high quality at a good yield SOLUTION: A light shielding film pattern substrate 37 formed with light shielding film patterns on a transparent glass substrate is subjected to a pattern size inspection A shifter pattern substrate 38 formed with grooves as phase shifters on the transparent glass substrate is subjected to a phase difference inspection The phase shift mask of the structure obtd by sticking and integrating both is subjected to a foreign matter inspection The shifter pattern substrate 38 and the light shielding film pattern substrate 37 are supported to face each other on a substrate mounting stage 3 and are positioned in a plane direction by an alignment optical system 3 The distortion in the thickness direction is measured and corrected by a parallelism measuring optical system 33 The parts coated with an adhesive of a UV curing type previously applied on the opposite surfaces of the shifter pattern substrate 38 and the light shielding film pattern substrate 37 are irradiated with light, such as UV rays, from a photoirradiation section 36 and is cured, by which both substrates are temporally fixed and stuck to each other
3 citations