Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Preparation and manufacture of pattern data on mask

Abstract: PURPOSE: To check the drawing of the pattern data on the phase shift mask. CONSTITUTION: The pattern data on the phase shift mask is laid out divisionally in a real pattern data layer, an auxiliary pattern data layer, and a phase shift pattern data layer (101). Then the drawing of only data on the real pattern of the real pattern data layer is checked and corrected (102). Data on a pattern assumed to be transferred onto a semiconductor wafer is generated from data on the composite pattern of data on the correct real pattern obtained by the drawing check and correction, data on the auxiliary pattern, and data on the phase shift pattern (103). Then, the data on the expected pattern and the data on the real pattern are compared and the drawing of the data on the auxiliary pattern and phase shift pattern is checked (104). COPYRIGHT: (C)1992,JPO&Japio

Defect printability of ArF alternative phase-shift mask: a critical comparison of simulation and experiment

Abstract: An alternative phase shift mask (alt-PSM) is a promising device for extending optical lithography to finer design rules. There have been few reports, however, on the mask's ability to identify phase defects. We report here an alt-PSM of a dual-trench type for KrF exposure, with programmed quartz defects used to evaluate defect printability by measuring aerial images with a Zeiss MSM100 measuring system. The experimental results are simulated using the TEMPEST program. First, a critical comparison of the simulation and the experiment is conducted. The actual measured topography of quartz defects are used in the simulation. Moreover, a general simulation study on defect printability using an alt-PSM for ArF exposure is conducted. The defect dimensions, which produce critical CD errors are determined by simulation that takes into account the full 3-dimensional structure of phase defects as well as a simplified structure. The critical dimensions of an isolated defect identified by the alt-PSM of a single-trench type for ArF exposure are 240 nm in bottom diameter and 50 degrees in height (phase) for the cylindrical shape and 240 nm in bottom diameter and 90 degrees in height (phase) for the rotating trapezoidal shape, where the CD error limit is +/- 5%.

Photomask and method of manufacturing the same

Abstract: PROBLEM TO BE SOLVED: To provide a photomask which can effectively avoid the problem by a side lobe even in a region where the thickness of a semipermeable film is not optimized and a method of manufacturing the same. SOLUTION: If a phase shift mask formed with the semipermeable film 12 on a transparent glass substrate 10 is regulated in the thickness of the semipermeable film 12 so as to be made optimum for the pitch of the patterns in fine pattern regions 14, the sub-peaks by adjacent apertures overlap each other in some cases in isolated pattern regions 16. When the sub-peaks overlap each other, suppressing means of suppressing transmitted light by the overlaps of the sub-peaks by shifting one or both positions of the overlapped sub-peaks (method A), lowering the intensity of the sub-peaks (method B) or eliminating the occurrence of the sub-peaks themselves (method C) is practiced. COPYRIGHT: (C)2003,JPO

Method for correcting characteristic of halftone phase shift mask

Abstract: PROBLEM TO BE SOLVED: To obtain a correction method for the characteristics of a halftone phase shift mask which is capable of correcting the transmittance and phase difference characteristic of the halftone phase shift mask to the desired transmittance and phase difference. SOLUTION: A measuring instrument 18 measures the transmittance of the manufactured halftone phase shift mask 10 and outputs the transmittance to a controller 20. The controller 20 sets the halftone phase shift mask 10 at a holder 22 and drives a drive assembly 24 to immerse the mask for a prescribed time into a quartz vessel 28 packed with a solution 26 heated to a prescribed temperature by a heater 30. As a result, the characteristics, such as film thickness and composition, of the halftone film are changed, by which the transmittance is changed and is corrected to the desired transmittance. After the halftone phase shift mask 10 is immersed for the prescribed time, the mask is rinsed with hot pure water and pure water and is then subjected to 1PA drying.