Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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TL;DR: This work believes to be new hybrid-type attenuated phase-shift masks for extreme-ultraviolet optical lithography by use of a Fabry-Perot interference filter, which show a smaller step height for less geometric shadow effects and a contrast higher than 94% for both deep-ult ultraviolet and extreme-ULTraviolet wavelength regimes.
Abstract: We have designed what we believe to be new hybrid-type attenuated phase-shift masks for extreme-ultraviolet optical lithography by use of a Fabry-Perot interference filter. The designs for the attenuated phase-shift masks show a smaller step height for less geometric shadow effects than additive- and subtractive-type attenuated phase-shift masks, a contrast higher than 94%
for both deep-ultraviolet and extreme-ultraviolet wavelength regimes, and a 180° phase-shift in the extreme-ultraviolet wavelength regime.
3 citations
Patent•
18 Sep 2002
TL;DR: A phase shift mask capable of achieving a variation in phase at the boundary between a light transmitting film and a phase shift film and thereby preventing formation of an undesirable pattern is presented in this article.
Abstract: A phase shift mask capable of achieving a variation in phase at the boundary between a light transmitting film and a phase shift film and thereby preventing formation of an undesirable pattern, and a method for fabricating the phase shift mask. The phase shifter has an inclined edge portion disposed at a boundary between the light transmitting film and the light shielding film. The method includes the steps of implanting impurity ions in the phase shifter and etching the phase shifter in a manner that the phase shifter is formed with an inclined edge portion at the boundary between the light transmitting film and the light shielding film.
3 citations
Patent•
28 Jul 1995
TL;DR: In this article, the authors proposed a method for correcting defects in a phase shift mask and a device therefor capable of monitoring an etching quantity in situ, where a projected defect partially left in a projected form at a region to be flat is removed, a deposited carbon layer formed so as to cover the projected defect is etched until at least the projected defects is exposed under a condition of selection ratio 1 of etching rate between carbon and a masking material, a carbon line is formed by depositing carbon in a straight line at the sight from above the surface.
Abstract: PURPOSE:To provide a method for correcting defects in a phase shift mask and a device therefor capable of monitoring an etching quantity in situ. CONSTITUTION:When a projected defect partially left in a projected form at a region to be flat is removed, a deposited carbon layer formed so as to cover the projected defect is etched until at least the projected defect is exposed under a condition of selection ratio 1 of etching rate between carbon and a masking material, a carbon line is formed by depositing carbon in a straight line at the sight from above the surface, dislocation extent between the carbon line 19 on the etched carbon surface and a carbon line 18 on a flat mask surface is measured by observing the phase shift mask from an oblique direction of the surface, then etching process is applied until the dislocation is made 0 and finally the carbon layer and deposited the carbon line 19 remained on the mask are completely removed.
3 citations
Patent•
06 May 1998
TL;DR: In this article, a halftone phase shift mask with three kinds of areas such as a light transmissive part, a translucent phase shift part and a light shielding part is provided.
Abstract: PROBLEM TO BE SOLVED: To provide an inspecting device for accurately inspecting whether or not respective shapes of a translucent phase shift part and a light shielding part are normal, as for a halftone type phase shift mask provided with three kinds of areas such as a light transmissive part, a translucent phase shift part and a light shielding part. SOLUTION: Light transmitted through the phase shift mask 16 after being emitted from a projecting part 17 is detected by a photodetecting part 18, and the output signal of the photodetecting part 18 is transmitted to a pattern calculating part 19. It is decided by the pattern calculating part 19 that a pattern with the output signal whose level is lower than a low level is a dark part and a pattern with the output signal whose level is higher than a high level is a bright part. The deciding processing is performed twice by the part 19, and the values of a reference low level and a reference high level are changed between respective deciding processes. By synthesizing two deciding processes, the defects are inspected without omission in three kinds of areas such as the light transmissive part, the translucent phase shift part and the light shielding part.
3 citations
Patent•
22 Mar 2002
TL;DR: In this paper, a phase shift mask and an exposure method using phase shift masks are presented. But, the phase-shift mask is capable of easily forming desired pattern shapes, and the method of manufacturing the mask and the exposure method is different from ours.
Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask which is capable of easily forming desired pattern shapes, a method of manufacturing the phase shift mask and an exposure method using the phase shift mask SOLUTION: A quartz substrate 1 has first light transparent parts 1a and second light transparent parts 1b allowing the transmission of exposure light The first and second light transparent parts 1a and 1b are so constituted that the phases of the exposure light allowing the transmission of both are changed 180 degC from each other Semi-light shielding films 3 exist between the first and second light transparent parts 1a and 1b and are formed in partial regions of the first and second light transparent parts 1a and 1b The semi-light shielding films 3 have the transmittance of 3 to 30%
3 citations