Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Halftone phase shift mask blank , halftone phase shift mask, and pattern transfer method

Abstract: In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.

Discrete phase shift mask writing

Abstract: A method and apparatus for photolithographically fabricating features on a very large scale integrated circuit wafer by use of a phase shift mask defining discrete regions. This overcomes the problems of intensity nulls at the junction of regions formed by portions of the mask having opposite phase. The mask includes a transition region defining three phases which are assigned to pixels in the transition region, such that the phase assignment of the pixels is synthesized from an algorithm taking into account optical resolution and depth of focus. Each pixel is assigned one of three discrete phases, which thereby creates a transition region simulating a ramp between the two regions of opposite phases, such that intensity variation of the optical image corresponding to the transition region is minimized.

Pixelated Phase Mask as Novel Lithography RET

Abstract: Novel RET-Pixelated Phase Mask (PPM) is proposed as a novel Resolution Enhancement Technique (RET). PPM is made of pixels of various phases with lateral dimensions significantly smaller than the illuminating radiation wavelength. Such PPM with a singular choice of pixel dimensions acts as a mask with variable phase and transmission due to radiation scattering and attenuation on pixel features with the effective intensity and phase modulated by the pixel layout. Key properties of the pixelated phase masks, the steps for their practical realization, and the benefits to random logic products discussed. Wafer patterning performance and comparative functional yield results obtained for a 65nm node microprocessor patterned with PPM, as well as current PPM limitations are also presented.

Sub-micron device fabrication with a phase shift mask having multiple values of phase delay

Abstract: Fabrication of integrated circuits--electronic, photonic or hydrid--permits attainment of higher device density. Pattern delineation with smaller design rules than previously associated with delineating radiation of given wavelength is the consequence of use of phase masks. Compared with earlier used, binary valued phase masks, the multiple values of those on which this fabrication depends permits improved effectiveness in lessening of edge-smearing radiation of consequence (of diffraction-scattered delineating radiation at feature edges). Phase masking may provide, as well, for feature generation by interference, and for reduced intensity of unwanted image hot spots by diffraction.

Phase shift mask blank, phase shift mask and method of manufacture

Abstract: A phase shift mask blank has a phase shift film of MoSiOC or MoSiONC on a transparent substrate, and optionally a chromium-based light-shielding film, a chromium-based antireflection film or a multilayer combination of both on the phase shift film. A manufacture method involving depositing the MoSi base phase shift film by a reactive sputtering technique using a sputtering gas containing carbon dioxide produces a phase shift mask blank and phase shift mask of quality, with advantages of in-plane uniformity and easy control during manufacture.