Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Exposing method and equipment thereof

Abstract: PROBLEM TO BE SOLVED: To provide an exposing method and equipment which can expose a mask pattern having fine (e.g. at most 0.15 μm) line width, with high resolution without changing a mask, in which mask pattern various kinds of patterns, L and S patterns, isolated and complicated patterns exist mixedly. SOLUTION: A phase shift mask has a desired pattern and a dummy pattern which is overlapped with the desired pattern and has periodicity. Out of the desired pattern, a part which is to be resolved by the effect of the dummy pattern is made wider than the line width of the dummy pattern, thus forming the phase shift mask. By using an illumination light which has a peak of intensity distribution in the vicinity of an optical axis, the phase shift mask is illuminated. A light which passed the phase shift mask is projected on a surface to be exposed via a projection optical system. As a result, the desired pattern is transferred on the surface to be exposed. COPYRIGHT: (C)2003,JPO

Large assist feature phase-shift mask for sub-quarter-micrometer window pattern formation

Abstract: To improve the depth of focus of isolated windows, large assist feather technique has been proposed This large assist method uses the assist features having almost the same size as main patterns, and the quartz substrate was vertically etched at the assist features These large assist features were not printed on a wafer by mask topography effect; that is, the light intensity at large assist feature was decreased by the scattering effect of the vertical quartz edges In this large assist feature masks, the phase shift angle of an assist feature has large effect on focus latitude We chose two phase shift angles: 180 degrees for small sigma illumination and 360 degrees for annular illumination The performances of two large assist feature masks were evaluated by using a 055 NA, valuable sigma, and KrF excimer laser stepper Moreover, we applied surface insoluble layer to the assist feature method Large assist features having the same size as main patterns were not printed on resist surface for 016 - 02 micrometer windows Wide DOF (08 micrometer) of 016 micrometer window was obtained by using this method

Attenuated phase shift mask for extreme ultraviolet lithography and method therefore

Abstract: Methods and apparatus are provided for extreme ultraviolet phase shift masks The apparatus comprises a substrate, a reflectance region, and an attenuating phase shifter The reflectance region overlies the substrate The attenuating phase shifter overlies the reflectance region The attenuating phase shifter includes a plurality of openings that expose portions of the reflectance region The attenuating phase shifter attenuates radiation through a combination of absorption and destructive interference The method comprises projecting radiation having a wavelength less than 40 nanometers towards a mask having a plurality of openings through an attenuating phase shifter The plurality of openings expose a reflectance region in the mask The attenuating phase shifter is less than 700 angstroms thick Radiation impinging on the reflectance region exposed by said plurality of openings is reflected whereas radiation impinging on the attenuating phase shifter is attenuated and shifted in phase The attenuating phase shifter attenuates using absorption and destructive interference

Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices

Abstract: To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.

Attenuated PSM for EUV: Can they mitigate 3D mask effects?

Abstract: The understanding, characterization and mitigation of 3D mask effects including telecentricity errors, contrast fading and best focus shifts becomes increasingly important for the performance optimization of future extreme ultraviolet (EUV) projection systems and mask designs. The scattering of light at the absorber edges results in significant phase deformations, which impact the effective phase and the lithographic performance of attenuated phase shift mask (attPSM) for EUV. We employ rigorous mask and imaging simulations in combination with multi-objective optimization techniques to identify the most appropriate material properties, mask and source geometries and to explore the potential of attPSMs for future EUV imaging.