Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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TL;DR: Here, the inexpensive fabrication of photoresist patterns that contain features of multiple and/or smoothly varying heights are demonstrated, which offer a low-cost alternative to present gray-scale photolithography approaches.
Abstract: The ability to produce three-dimensional (3D) microstructures is of increasing importance in the miniaturization of mechanical or fluidic devices, optical elements, self-assembling components, and tissue-engineering scaffolds, among others. Traditional photolithography, the most widely used process for microdevice fabrication, is ill-suited for 3D fabrication, because it is based on the illumination of a photosensitive layer through a “photomask” (a transparent plate that contains opaque, unalterable solid-state features), which inevitably results in features of uniform height. We have devised photomasks in which the light-absorbing features are made of fluids. Unlike in conventional photomasks, the opacity of the photomask features can be tailored to an arbitrary number of gray-scale levels, and their spatial pattern can be reconfigured in the time scale of seconds. Here we demonstrate the inexpensive fabrication of photoresist patterns that contain features of multiple and/or smoothly varying heights. For a given microfluidic photomask, the developed photoresist pattern can be predicted as a function of the dye concentrations and photomask dimensions. For selected applications, microfluidic photomasks offer a low-cost alternative to present gray-scale photolithography approaches.
148 citations
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10 Sep 2004TL;DR: In this article, a method for defining full phase layout for defining a layer of material in an integrated circuit is described, which can be used to define, arrange, and refine phase shifters to substantially define the layer using phase shifting.
Abstract: A method for defining a full phase layout for defining a layer of material in an integrated circuit is described. The method can be used to define, arrange, and refine phase shifters to substantially define the layer using phase shifting. Through the process, computer readable definitions of an alternating aperture, dark field phase shift mask and of a complimentary mask are generated. Masks can be made from the definitions and then used to fabricate a layer of material in an integrated circuit. The separations between phase shifters, or cuts, are designed for easy mask manufacturability while also maximizing the amount of each feature defined by the phase shifting mask. Cost functions are used to describe the relative quality of phase assignments and to select higher quality phase assignments and reduce phase conflicts.
140 citations
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02 Nov 2007TL;DR: In this article, a method and system for providing a microelectric device, such as a magnetoresistive read sensor, with a mask layer on the microelectric devices is described.
Abstract: A method and system for providing a microelectric device, such as a magnetoresistive read sensor are described. The method and system include providing a mask layer on the microelectric device. The method and system further include exposing the mask layer to provide a mask. A portion of the mask covers a portion of the microelectric device. The step of exposing the mask layer further includes utilizing a chromeless alt-phase shift mask for providing the portion of the mask.
130 citations
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19 Jun 1995TL;DR: In this article, the phase assignment for a phase shift mask is determined by a technique which determines, without assignment conflict, the intersection of the gate pattern with the active gate pattern and divides the intersection into categories of stacks where a slightly different phase assignment rules is employed for the different stacks.
Abstract: A method of performing poly level lithography in manufacturing an integrated circuit using a phase shift mask in a step and repeat optical tool where the phase assignment for said phase shift mask is determined by a technique which determines, without assignment conflict, the Intersection of the gate pattern with the active gate pattern and which divides the Intersection into categories of stacks where a slightly different phase assignment rules is employed for the different stacks.
124 citations
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TL;DR: In this paper, a phase shift mask is used for large-grain growth of Si thin films on the glassy substrate. But the phase difference of light at the mask results in spatial modulation of light intensity at the sample surface, which triggers the lateral grain growth.
Abstract: We propose a novel excimer-laser crystallization method that uses a phase-shift mask for large-grain growth of Si thin films on the glassy substrate. Due to interference effects of the laser light, the phase difference of light at the mask results in spatial modulation of light intensity at the sample surface, which triggers the lateral grain growth. Grains as large as 7 µm could be grown by a single-shot irradiation.
124 citations