Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Mask Materials and Designs for Extreme Ultra Violet Lithography

Abstract: Extreme ultra violet lithography (EUVL) is no longer a future technology but is going to be inserted into mass production of semiconductor devices of 7 nm technology node in 2018. EUVL is an extension of optical lithography using extremely short wavelength (13.5 nm). This short wavelength requires major modifications in the optical systems due to the very strong absorption of EUV light by materials. Refractive optics can no longer be used, and reflective optics is the only solution to transfer image from mask to wafer. This is why we need the multilayer (ML) mirror-based mask as well as an oblique incident angle of light. This paper discusses the principal theory on the EUV mask design and its component materials including ML reflector and EUV absorber. Mask shadowing effect (or mask 3D effect) is explained and its technical solutions like phase shift mask is reviewed. Even though not all the technical issues on EUV mask are handled in this review paper, you will be able to understand the principles determining the performance of EUV masks.

Method for manufacturing phase shift mask blank and method for manufacturing phase shift mask

Abstract: To provide a method for manufacturing a phase shift mask blank having a light translucent film or a light translucent portion having the designated phase angle and transmittance and being superior in film characteristics of chemical resistance, light resistance, and internal stress. The invention is characterized by having a translucent film on a transparent substrate, wherein thermal treatment of the translucent film is implemented at more than 150° C. after forming the translucent film comprising nitrogen, metal, and silicon as a main component on said transparent substrate.

Phase shift mask and method for manufacturing same

Abstract: A phase shift mask device includes a transparent substrate; a first rim type part on the transparent substrate, the first rim type mask part including a first phase shift layer, a second phase shift layer adjacent the first phase shift layer, and a light transparent portion adjacent the second phase shift layer; a first outrigger type mask part on the transparent substrate spaced from the first rim type mask part by a first distance, the first outrigger type mask part including a first phase shift layer, a second phase shift layer adjacent the first phase shift layer, a shielding layer adjacent the first phase shift layer, and a light transparent portion adjacent the second phase shift layer; a second rim type mask part on the transparent substrate having a diagonal relationship with respect to the first rim type mask, the second rim type mask part including a first phase shift layer, a second phase shift layer adjacent the first phase shift layer, and a light transparent layer portion adjacent the second phase shift layer; and a second outrigger type mask part on the transparent substrate having a diagonal relationship with respect to the first outrigger type mask part, the second outrigger type mask part including a first phase shift layer, a second phase shift layer adjacent the first phase shift layer, a shielding layer adjacent the first phase shift layer, and a light transparent portion adjacent the second phase shift layer.

Phase shift mask and method for fabricating the same

Abstract: A phase shift mask having a uniform thickness at a phase shift region. The phase shift mask includes a quartz substrate provided with a plurality of grooves, a chromium pattern coated over the grooves and every other portion of the quartz substrate disposed between the grooves, and a phase shift material pattern coated over the portion of the quart substrate not covered with the chromium pattern, the phase shift material pattern overlapping with the portions of the chromium pattern disposed at opposite sides of the portion of the quartz substrate not covered with the chromium pattern. This phase shift mask is fabricated by forming the chromium pattern such that it is flush with the quartz substrate at its edge. By this phase shift mask, it is possible to prevent the phase shift material pattern overlapping with the chromium pattern from having a non-uniform thickness due to the topology of the chromium pattern.

Apparatus for inspecting a phase shift mask

Abstract: An apparatus for inspecting a phase shift mask includes a light source for irradiating a pattern of a phase shift mask including a light shield member and a phase member, a phase difference detector for generating from light transmitted through the phase shift mask a phase signal including the phase difference created by the phase member, a reference signal generator for generating a reference signal, and a calculation section for detecting a defect in the phase member of the phase shift mask by comparing the phase signal with the reference signal. The reference signal may be generated from a reference mask having the same pattern as that of the phase shift pattern or from CAD data for the formation of the pattern of the phase shift mask.