Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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IBM1
TL;DR: In this article, a multi-station step-and-repeat stepper for imaging semiconductor wafers is described, which is used for image field characterization or image defect correction, or for phase shift mask (PSM) loop cutting.
Abstract: A multi-station step-and-repeat apparatus (stepper) for imaging semiconductor wafers (114,114',116). The stepper (300) has at least 2 stations (106,106',108), at least one (108) of which is for imaging. The second station (106) may be used for image field characterization, or image defect correction, or for phase shift mask (PSM) loop cutting. Multiple laser beams (310-326') directed in orthogonal directions provide interferometric monitoring to track wafer locations for wafers on the stepper.
15 citations
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21 Oct 1999TL;DR: In this paper, a phase shift mask and a method for modifying the mask layout to remove the sidelobe regions is presented. But, the method is based on the size and/or the maximum of light intensity in a given sidelobe region.
Abstract: A phase shift mask and a method of designing a phase shift mask involves simulation of light exposure through the mask layout in order to identify sidelobe regions. The method includes modification of the mask layout to remove the sidelobe regions. The method of modification may be based upon the size and/or the maximum of light intensity in a given sidelobe region. The method may utilize an iterative process of modifying the mask layout and simulating exposure through the modified mask layout until a threshold criterion such as the non-existence of sidelobe regions is met.
15 citations
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02 Aug 1996TL;DR: A phase shift mask, e.g., halftone phase shift masks as discussed by the authors, is a mask that can suppress the occurrence of a sub-peak of light intensity, which has an adverse effect on the image formation, and has a light blocking pattern with a reduced transmittance at a region outside a device pattern area which corresponds to a region subjected to multiple exposure during transfer effected by using the mask.
Abstract: A phase shift mask, e.g. a halftone phase shift mask, which need not to form an ultra-fine pattern and is capable of suppressing during exposure the occurrence of a sub-peak of light intensity, which has an adverse effect on the image formation, and which has a light-blocking pattern with a reduced transmittance at a region outside a device pattern area which corresponds to a region subjected to multiple exposure during transfer effected by using the mask. The halftone phase shift mask has on a transparent substrate (101) a halftone phase shift film (102) comprising a single layer or a plurality of layers. The composition of the halftone phase shift film (102) is changed in a region (107) outside a device pattern area on the transparent substrate (101) which corresponds to a multiple-exposure region by a method wherein the region (107) is irradiated with an electromagnetic wave, a particle beam, heat rays, etc., or a method wherein after a region in which the composition is not desired to change has been masked, the whole blank is exposed to an active atmosphere, thereby reducing the transmittance for exposure light at the region (107).
15 citations
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NEC1
TL;DR: In this article, a half-tone phase shift mask (HTPSM) was developed to reduce mask error enhancement factor (MEEF) and depth of focus (DOF).
Abstract: To reduce mask error enhancement factor (MEEF), we have developed the new type half-tone phase shift mask (HTPSM) in which transparent regions are surrounded by opaque rims. We evaluated the imaging performance of contact hole patterns including the MEEF and the depth of focus (DOF). Using this new method, we obtained about 2.0 MEEF and 0.7-micrometers DOF for 180-nm isolated hole, which was much better than that in the conventional mask such as binary mask or HTPSM (the MEEF more than 3). The advantage of our method was that it was possible to attain both the MEEF reduction and the DOF enhancement by the optimization of mask hole size and rim width. Furthermore, we confirmed that this new method was effective not only for improving the exposure dose latitude but also for attenuating side-peak effect.
15 citations
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29 Jun 1998TL;DR: In this article, the impact of defocus, lens aberration, and layout design on sidelobe printing is discussed and a detailed comparison between printed wafers and aerial image simulations is presented and discussed.
Abstract: One major limitation of applying attenuated phase shift mask (PSM) is sidelobe printing. The sidelobe is caused by constructive interference of the first order of diffraction maximum from nearby features, plus the electrical fields from semi-transparent materials in the surrounding area. The impact of defocus, lens aberration, and layout design on sidelobe printing are discussed. A detailed comparison between printed wafers and aerial image simulations shows how these factors affect sidelobe printing. Data show tight control on both the third and the fifth order aberrations is critical in PSM application. Since the degree of coherence and the stepper's response to coherence transfer function will significantly affect the performance of PSM, tests on phase shift mask are necessary to qualify a stepper. An alternative approach that uses attenuated rim shifter PSM to prevent sidelobe printing is presented and discussed.
15 citations