Topic
Phase-shift mask
About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.
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Patent•
TSMC1
TL;DR: In this paper, a mask combining an alternating phase shift part and an attenuating part on a single blank and a method of forming said mask is presented. But the method involves fewer processing steps, fewer layers of material and is more cost effective than other methods in the current art.
Abstract: A mask combining an alternating phase shift part and an attenuating phase shift part on a single blank and a method of forming said mask. The method involves fewer processing steps, fewer layers of material and is more cost effective than other methods in the current art. A central reason for the simplicity of the method is the use of different intensity levels of E-beam exposure in a single resist layer and achieving phase shifts by transmitting radiation through alternating regions of the same transparent substrate that are etched and not etched.
13 citations
Patent•
10 Feb 1994
TL;DR: In this article, the authors proposed a method of forming a photoresist pattern, wherein a fine pattern can be formed using a mask which is high in degree of freedom and easily replaced.
Abstract: PURPOSE: To provide a method of forming a photoresist pattern, wherein a fine pattern can be formed using a mask which is high in degree of freedom and easily replaced. CONSTITUTION: A mask M1 which transfers only a pattern formed in lines or lattices is formed on all the surface of an exposure region through a phase shift mask or the like, and a mask M2 which makes only a necessary part exposed to light again to form an image is formed on the basis of the lines or the lattice, and a prescribed pattern is formed on a photoresist through the masks M1 and M2 making these masks overlap each other. COPYRIGHT: (C)1995,JPO
13 citations
Patent•
20 Nov 2002
TL;DR: In this paper, a halftone phase shift mask blank having a light semi-transmission film on a transparent substrate is manufactured by alternately laminating, on the transparent substrate 10, layers of thin films (TiN films 20) mainly made up of nitrogen and titanium and thin films(SiN films 30) consisting of nitrogen, silicon and silicon.
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a phase shift mask blank having a light semi-transmission film or a light semi-transmission area with a specified phase angle and transmittance and excellent film characteristics such as good chemical resistance, good light resistance and reduced inner stress, and to provide a method for manufacturing a phase shift mask. SOLUTION: A halftone phase shift mask blank having a light semi-transmission film on a transparent substrate 10 is manufactured by alternately laminating, on the transparent substrate 10, layers of thin films (TiN films 20) mainly made up of nitrogen and titanium and thin films (SiN films 30) mainly made up of nitrogen and silicon to form the light semi-transmission film and then heat treating the light semi-transmission film at ≥300°C. COPYRIGHT: (C)2004,JPO
13 citations
TL;DR: In this paper, the etching properties of attenuated phase shift mask materials for EUVL, such as TaN (attenuator layer), Al2O3 (spacer), Mo (phase shifting layer), Ru (buffer/capping/etch-stop layer), and Mo-Si multilayer (reflective layer), were investigated.
Abstract: Among the core extreme ultraviolet lithography (EUVL) technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration from that of conventional photolithography. This study investigated the etching properties of attenuated phase-shift mask materials for EUVL, such as TaN (attenuator layer), Al2O3 (spacer), Mo (phase shifting layer), Ru (buffer/capping/etch-stop layer), and Mo–Si multilayer (reflective layer) by varying the Cl2∕Ar gas flow ratio, dc self-bias voltage (Vdc), and etch time in inductively coupled plasmas. For the fabrication of the attenuated EUVL mask structure proposed herein, the TaN, Al2O3, and Mo layers need to be etched with no loss of the Ru layer on the Mo–Si multilayer. The TaN and Al2O3 layers were able to be etched in BCl3∕Cl2∕Ar plasmas with a Vdc of −100V and the Mo layer was etched with an infinitely high etch selectivity over the Ru etch-stop layer in a Cl2∕Ar plasma with a Vdc of −25V even with in...
13 citations
Patent•
13 May 2013
TL;DR: In this article, a light-shielding film has an optical density of 2 or higher and 4 or lower and has a reflection-preventing function, which can reduce the burden on resist pattern or hard mask pattern at the time of transferring a pattern on the light shield film and therefore it is possible to carry out pattern transfer with high precision.
Abstract: A light-shielding film 2 formed on a transparent substrate 1 has a monolayer structure or a multilayer structure. At least one layer is formed by film-formation with a chromium-containing material including tin. The light-shielding film 2 has an optical density of 2 or higher and 4 or lower and has a reflection-preventing function. The layer made of a chromium-containing material including tin, which constitutes the light-shielding film 2, can cause a significant increase in the etching rate at the time of chlorine-containing dry etching including oxygen. Thus, burden on the resist pattern or hard mask pattern at the time of transferring a pattern on the light-shielding film is reduced, and therefore it is possible to carry out pattern transfer with high precision.
13 citations