Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Production of phase shift mask

Abstract: PROBLEM TO BE SOLVED: To provide a method of producing a phase shift mask by which an etched state of the surface of a quartz substrate as the base is decreased and a rough surface or production of a rough pattern are suppressed when etching of a coating film consisting of a phase shift mask material such as oxide nitride of molybdenum silicon is completed SOLUTION: The production method includes a process of forming a film consisting of any of an oxide of molybdenum silicon, nitride of molybdenum silicon, oxide nitride of molybdenum-silicon, nitride of silicon and oxide nitride of silicon on a quartz substrate, and a process of forming a phase shift mask pattern by reactive ion etching to selectively etch and remove the film by using an etching gas containing gaseous chlorine

Determining an optimizaton for generating a pixelated photolithography mask with high resolution imaging capability

Abstract: A pixelated photolithography mask is optimized for high resolution microelectronic processing. In one embodiment, the invention includes synthesizing a pixelated photolithography mask, applying a pixel flipping function to the mask, comparing the resulting mask to a desired result, and synthesizing an optimized pixelated binary photolithography mask using the function.

Phase shift mask blank, phase shift mask and method for transferring pattern

Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask blank which can be easily processed to obtain transmittance, reflectance and a phase with higher accuracy, and to provide a phase shift mask using the blank and a method for transferring a pattern. SOLUTION: The phase shift mask blank is a multilayer phase shift mask blank which has a film mainly having a light absorbing function on a substrate and has one or more layers of films mainly having a phase shift function thereon. The film having the light absorbing function contains a group 4A metal, with the metal content higher in the upper part of the film than in the lower part. When the phase shift mask blank is processed into a phase shift mask, the light absorbing film is easily detected during dry etching in a drying etching process and selectivity against a substrate is advantageously obtained, which results in high-accuracy processing. Thus, a mask having the transmittance and a phase shift with higher accuracy can be obtained, and thereby, a larger focal depth can be kept in photolithography using the mask. COPYRIGHT: (C)2006,JPO&NCIPI

Photolithography system using a combination of modified illumination and phase shift mask

Abstract: Various methods have been developed to overcome the limitations in photolithography. Modified illumination and phase shift mask technologies have been developed in order to improve the depth of focus and resolution limit.We have combined these two methods and applied them to the step and repeat exposure system. Experiments using the modified illumination were carried out and subhalf-micron patterns were produced. The process latitude of 64M dynamic random access memory (DRAM) is doubled by this combination process.

Halftone phase shift mask blank, and method of manufacture

Abstract: A halftone phase shift mask blank has a phase shifter film on a transparent substrate. The phase shifter film is composed of a metal silicide compound containing Mo, at least one metal selected from Ta, Zr, Cr and W, and at least one element selected from O, N and C. The halftone phase shift mask blank has improved processability and high resistance to chemicals, especially to alkaline chemicals.