Phase-shift mask

About: Phase-shift mask is a research topic. Over the lifetime, 2088 publications have been published within this topic receiving 18058 citations.

Phase shift mask

Abstract: PURPOSE:To produce the phase shift mask which is embodied as both negative type and positive type masks, is easily formable and is produced without generation problems, such as degradation in transmittance and adhesion property, by providing both of one surface and the other surface of a transparent substrate with phase shift parts for shifting the phases of transmitted light and superposing a part of the phase shift parts of the one surface on a part of the phase shift parts of the other surface. CONSTITUTION:The one surface 1a (front surface) of the transparent substrate is provided with the phase shift parts 11 for shifting the phases of the transmitted light and the other surface 1b (rear surface) is also provided with the phase shift parts 11 for shifting the phases of the transmitted light. These phase shift parts are so formed that at least a part of the phase shift parts 11 of the one surface 1a overlap on at least a part of the phase shift parts 11 of the other surface 1b. The phase shift parts 11, 11 of the respective surfaces are formed by setting a phase shift quantity at 90 deg. and, therefore, the parts where the phase shift parts 11, 11 on both surfaces overlap constitute 180 deg. phase shift parts 11A. The parts where the phase shift parts 11, 11 of both surfaces do not overlap constitute the 90 deg. phase shift parts 11B.

Single-layer, half-tone phase-shift mask and its manufacture

Abstract: PURPOSE:To provide a single-layer, half-tone phase-shift mask which can reduce manufacturing processes and the occurrence of defects, control the amount of phase shift, and control light intensity transmittance to the appropriate value and a method for manufacturing the same. CONSTITUTION:A single-layer,-half-tone phase-shift mask comprises a substrate 10 and a single semishielding layer 22 serving also as a shifter layer formed on the substrate and having semishielding films formed in a desired pattern, the semishielding films being made from a material with a complex index of refraction whose real and imaginary number parts can be varied depending on the film-forming conditions of CVD method. A method for manufacturing the mask comprises a process in which, using on the substrate the material with a complex index of refraction whose real and imaginary number parts can be varied depending on the film-forming conditions of CVD method, semishielding films are formed from the material using CVD method and a single semishielding layer serving also as a shifter layer is formed by the selective removal of part of the semishielding films.

Chromium-based attenuated phase shifter for DUV exposure

Abstract: An attenuated phase shift mask (APSM) for DUV exposure using a chromium fluoride film as an embedded phase shifter is developed. The chromium fluoride film is deposited by the conventional dc reactive sputtering process using gases such as CF4 or SF6 as the fluorine source. This film can be dry-etched by the chlorine chemistry, so that an etch into the quartz plate, which causes phase error, is negligible and high accuracy phase shift control can be achieved. Furthermore, this film shows a transmission of ca. 15% at 248 nm as a single- layered embedded shifter deposited on the quartz plate (100% for air), and therefore, in combination with an opaque chrome layer, various transmissions up to ca. 8% can be obtained without changing the shifter material. Promising properties as a practical shifter material are confirmed, and an exposure test on 2.5 micrometers and 3.0 micrometers hole patterns, using an APSM with a trilayer shifter, where an opaque chrome film is sandwiched by two chromium fluoride films, shows that the focus latitude can be extended compared with conventional chrome masks.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Phase shifter film and process for the same

Abstract: In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide based phase shifter film is formed. Thereby, it becomes possible to provide a halftone type phase shift mask, which is applicable to an ArF laser or to a KrF laser, by using molybdenum silicide based materials.

Phase shift mask and method of manufacturing the same

Abstract: A phase shift mask (200) comprising a transparent portion (4) that includes a molybdenum silicide nitride or molybdenum silicide oxide film (4) having a phase difference of 180° and a transmissivity of 2 % - 5 %. In the manufacture of the transparent portion, sputtering is applied to deposit the film of molydenum silicide oxide or molybdenum silicide nitride. This mask has better resolution than the conventional attenuation phase shift mask having a transmissivity of 5 % - 40 %, and prevents the deformation of resist parttern which is ascribed to the generation of side lobe around the resist pattern.